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Wyświetlanie 1-15 z 28
Tytuł:
Lattice Deformation Studies in Silicon Implanted with High-Energy Protons
Autorzy:
Wieteska, K.
Dłużewska, K.
Wierzchowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945258.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 395-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Dłużewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964180.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
Silicon crystals implanted with 9 MeV protons to the dose of 5×10$\text{}^{17}$ cm$\text{}^{-2}$ were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies
Autorzy:
Mazur, K.
Wierzchowski, W.
Wieteska, K.
Hofman, W.
Sakowska, H.
Kościewicz, K.
Strupiński, W.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1538812.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cm
61.72.Ff
61.72.up
Opis:
X-ray reflectometric and diffraction topographic methods were applied for examination of 4H and 6H silicon carbide substrates finished with various regimes, as well as, silicon carbide epitaxial layers. The investigations indicated a very good quality of the substrate surfaces finished with the process established at the Institute of Electronic Materials Technology, which provided the surface roughness σ = 0.55 ± 0.07 nm for 4H-SiC wafers. These values were better than those of substrate wafers offered by many commercial producers. The surface roughness was decreased during the initial high temperature etching to σ = 0.22 ± 0.07 nm. A relatively good structural quality was confirmed in the case of 4H epitaxial wafers deposited on the substrates prepared from the crystals manufactured at the IEMT, with the 8° off-cut from the main (001) plane.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 272-276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron White Beam Topographic Studies of Gallium Arsenide Crystals
Autorzy:
Wierzchowski, W.
Wieteska, K.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1964178.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and back-reflection projection methods and transmission section method. Some of the topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendellösung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous methods realized with conventional X-ray sources.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1015-1019
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Misfit Dislocation Sources in GaAs Epitaxial Layers
Autorzy:
Wierzchowski, W.
Mazur, K.
Strupiński, Wł.
Wieteska, K.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945232.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The formation of misfit dislocation was studied in GaAs homoepitaxial layers on the substrates containing considerable amount of isoelectronic indium. The layers were grown with metal-oxide chemical vapour deposition and chemical vapour deposition methods including low temperature process with tertiarbutylarsine arsenic source. The critical conditions of misfit dislocation formation were exceeded up to 5×. The samples were examined before and after epitaxial process with a number of different X-ray topographic and diffractometric methods, including high resolution synchrotron white beam topography. The crystallographic identification of the defects was supported by the numerical simulation of topographic images. It was found that a number of threading dislocations, continuing in the epitaxial layer from those existing in the substrate, did not take part in the formation of misfit dislocations despite a suitable slip system. On the other hand, the formation of misfit dislocations from small imperfections of epitaxial deposit was proved in many cases. A reasonable good quality of the layers was confirmed by the resolution of individual defects and only small broadening of rocking curves.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 341-346
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates
Autorzy:
Wierzchowski, W.
Wieteska, K.
Mazur, K.
Kościewicz, K.
Balcer, T.
Strupiński, W.
Paulmann, C.
Powiązania:
https://bibliotekanauki.pl/articles/1431659.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cm
61.72.Ff
61.72.up
Opis:
Undoped 4H silicon carbide epitaxial layers were deposited by means of CVD method with growth rates of 2 μm/h, 5 μm/h and 11 μm/h at 1540°C on n-doped 8°, 4° and 0° off-cut 4H-SiC (00·1) substrates. The structural defects were studied before and after growth of the epitaxial layers by means of conventional Lang topography, synchrotron white beam and monochromatic beam topography and by means of X-ray specular reflectometry. The topographic investigations confirmed the continuation of the dislocations in the epitaxial deposit on the 8° and 4° off-cut substrates without new extended defects. The important difference occurred in the surface roughness of the epitaxial layers, which increased for higher growth rates. The epitaxial layers grown on 0° off-cut substrates at analogous condition contained usually other SiC polytypes, but the influence of the growth rate on the distribution of the polytypes was observed.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 915-919
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Simulation of Bragg-Case Section Images οf Dislocations and Inclusions in Aspect of Identification of Defects in SiC Crystals
Autorzy:
Balcer, T.
Wierzchowski, W.
Wieteska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1538998.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ff
61.72.up
Opis:
The numerical simulation has been applied for studying of Bragg-case section topographic images of dislocation and rod-like inclusions. The validity of simple approximation of extinction contrast was confirmed in the case of screw dislocations in silicon carbide crystals. A procedure for approximate calculation of the strain field of rod-like inclusion was constructed, consisting of adding the contributions from a very large number of point-like inclusions uniformly distributed inside the assumed volume of the inclusion. The procedure ensured a reasonable similarity between the simulated topographs and experimental Bragg-case section topographic images of some pipe-formed cavities in silicon carbide crystals. The method is useful for some other materials, e.g. it enabled to compute realistic simulation of plane-wave topographs of the rod-like inclusions in YAG.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 336-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interference Fringes in the Plane Wave Topographic Images of Growth Bands in Si:Ge
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Lefeld-Sosnowska, M.
Regulska, M.
Powiązania:
https://bibliotekanauki.pl/articles/2030662.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ff
Opis:
An Si:Ge crystal with approximately 3% of germanium was studied with strongly collimated short-wavelength monochromatic synchrotron beam (beamline E2 at HASYLAB). The topographs obtained in the asymmetric 224 reflection revealed the presence of interference fringes related to growth bands caused by segregation of germanium. The fringes, observed for the first time, were strongly dependent on the angular setting and it was possible to distinguish at least three systems of fringes. A number of features of the existing strain field, which may be important for the formation of the fringes, was determined using other topographic methods, especially the Bragg-case section topography.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 729-734
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Lattice Strains in Layered Structures Containing Porous Silicon
Autorzy:
Wierzchowski, W.
Wieteska, K.
Graeff, W.
Brzozowski, A.
Nossarzewska-Orłowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/2035501.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterisation included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidising and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of the investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 283-288
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation in Al$\text{}_{x}$Ga$\text{}_{1-x}$As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Turos, A.
Grötzschel, R.
Powiązania:
https://bibliotekanauki.pl/articles/2011027.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
A series of highly perfect Al$\text{}_{0.45}$Ga$\text{}_{0.55}$ As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10$\text{}^{13}$-2×10$\text{}^{15}$ ions/cm$\text{}^{2}$ were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10$\text{}^{14}$ ions/cm$\text{}^{2}$. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 289-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
White Beam Synchrotron Topographic Characterisation of Silicon Wafers Directly Bonded by Oxide Layer
Autorzy:
Wierzchowski, W.
Wieteska, K.
Graeff, W.
Gawlik, G.
Pawłowska, M.
Powiązania:
https://bibliotekanauki.pl/articles/2011029.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Yh
68.35.-p
Opis:
Various types of layer structures obtained by direct bonding of oxidised silicon wafers were studied by means of different X-ray topographic methods using white synchrotron beam and the observation of selective etching pattern using scanning electron microscopy and optical microscopy with Nomarski contrast. In the present investigation the particularly important results were obtained with synchrotron section topography, which revealed different defects caused by bonding of thick wafers, in particular the dislocations and microcracks. The different situation was observed in the case of bonding with a very thin layer separated from a silicon substrate by high dose proton implantation. In this case a thin layer accommodated practically all induced strain and the bonded oxidised thick substrate remained defect-free in its inner volume.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 283-288
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Poprawa jakości polerowanych płytek SiC metodą chemicznego utleniania i obróbki termicznej. Badania jakości powierzchni metodami rentgenowskimi
Improvement of the quality of SiC wafers polished using chemical oxidation and heat treatment. Examination of the quality of the surface using X-ray techniques
Autorzy:
Sakowska, H.
Mazur, K.
Teklińska, D.
Wierzchowski, W.
Wieteska, K.
Gała, M.
Powiązania:
https://bibliotekanauki.pl/articles/192399.pdf
Data publikacji:
2012
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
SiC
utlenianie katalityczne
polerowanie
catalytic oxidation
polishing
Opis:
W artykule przedstawiono wyniki badań wpływu utleniania chemicznego i wygrzewania na poprawę jakości polerowanej, krzemowej, powierzchni płytek SiC. Do chemicznego utleniania zastosowano reakcję Fentona. Czynnikiem utleniającym były rodniki hydroksylowe (OH*) powstające z rozkładu nadtlenku wodoru (H2O2) w obecności jonów żelaza Fe(II). Uzyskano poprawę parametrów chropowatości przy określonych warunkach utleniania. Wygrzewanie płytek polerowanych standardowo, w odpowiednio dobranych warunkach, pozwoliło na uzyskanie chropowatości na poziomie atomowym Ra ∼ 0,1 nm oraz znaczną redukcję warstwy uszkodzonej. Jakość krystaliczną płytek badano przy użyciu metod rentgenograficznych: dyfraktometrii, topografii i reflektometrii. Pomiary gładkości powierzchni, przed i po obróbce badano przy pomocy mikroskopu optycznego z kontrastem Nomarskiego i mikroskopu sił atomowych AFM.
Experimental results of chemical oxidation and thermal annealing and their influence on the improvement of the quality of the polished surface of silicon carbide (SiC) wafers have been presented. The Fenton process was used in the process of chemical oxidation. Hydroxyl radicals (OH*) generated during the decomposition of a hydrogen peroxide (H2O2) solution were the oxidizing agents. The quality of the roughness parametres was improved. After thermal annealing in vacuum at T 900°C a very smooth surface was obtained, subsurface damaged layers were reduced, with Ra ∼ 0,1 nm. Both the crystallographic quality and roughness of the layers were investigated using X-ray methods. The surface smoothness before and after processing was measured using an atomic force microscope (AFM) and an optical microscope.
Źródło:
Materiały Elektroniczne; 2012, T. 40, nr 2, 2; 3-10
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of $SrLaGaO_4$
Autorzy:
Malinowska, A.
Lefeld-Sosnowska, M.
Wieteska, K.
Wierzchowski, W.
Pajączkowska, A.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1812255.pdf
Data publikacji:
2008-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ff
61.72.Nn
61.72.Lk
61.72.Qq
Opis:
$SrLaGaO_4$ single crystals are perspective substrate materials for high temperature superconductors thin films, elements of thermal radiation receivers and other electronic devices. The defect structure of the Czochralski grown $SrLaGaO_4$ crystal was investigated by means of X-ray topography exploring both conventional and synchrotron sources. The crystal lattice defects in the core region of the crystal were investigated. The regular network of defects arranged in rows only in ⟨100⟩ direction was observed. Owing to high resolution of synchrotron radiation white beam back reflection topographs one can distinguish individual spots forming the lines of the rows. It can be supposed that these elongated rod-like volume defects are located in 100 lattice planes forming a kind of walls. They are built approximately of the same phase as crystal but crystallize at a different moment than a rest of the crystal due to the constitutional supercooling.
Źródło:
Acta Physica Polonica A; 2008, 114, 2; 433-438
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wyznaczenie wybranych parametrów piezoelektrycznych kryształu SrLaGa3O7
Determination of selected parameters in SrLaGa3O7 crystal
Autorzy:
Sadura, J.
Brzozowski, E.
Wieteska, K.
Wierzchowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/192102.pdf
Data publikacji:
2013
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
kryształ SrLaGa3O7
akustyczna fala powierzchniowa (SAW)
SrLaGa3O7 crystal
surface acoustic wave (SAW)
Opis:
W pracy wyznaczono parametry piezoelektryczne monokryształu SrLaGa3O7 (SLGO) otrzymanego w ITME metodą Czochralskiego, należącego podobnie jak BaLaGa3O7 (BLGO) do grupy związków chemicznych opisanych ogólnym wzorem ABC3O7 (gdzie A = Ca, Sr, Ba; B = La, Gd; C = Ga, Al ). Pomiary i obliczenia przeprowadzono dla różnych orientacji kryształu, lepsze właściwości piezoelektryczne (najwyższy współczynnik sprzężenia elektromechanicznego K2) wykazały płytki o orientacji 45°XZ oraz ZX40°. Przeprowadzone badania termiczne potwierdziły możliwość wykorzystania tego piezoelektryka jako podłoża podzespołu wysokotemperaturowego. Zastosowana metoda badawczo – pomiarowa pozwala na szybkie szacowanie parametrów kryształu, jak również jego przydatności jako materiału piezoelektrycznego do zastosowań w podzespołach z AFP.
This paper presents the piezoelectric properties of the SrLaGa3O7 (SLGO) crystal grown at ITME using the conventional RF-heating Czochralski method. SLGO, just like BaLaGa3O7 (BLGO), belongs to the group of compounds described by the general formula ABC3O7 (where A = Ca, Sr, Ba; B = La, Gd; C = Ga, Al). Measurements and calculation of SAW parameters were made for different crystal plane orientations. Better piezoelectric parameters were found in 45°XZ and ZX40° orientations of SLGO. The thermal study confirmed the possibility of using this crystal as a high-temperature component base. The applied research and measurement method allows a quick estimation of the parameters of the crystal, as well as evaluation of its usefulness as a piezoelectric material for application in SAW components.
Źródło:
Materiały Elektroniczne; 2013, T. 41, nr 2, 2; 3-8
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Adamczewska, J.
Misiuk, A.
Regiński, K.
Wierzchowski, W.
Wieteska, K.
Kozanecki, A.
Kuritsyn, D.
Glukhanyuk, W.
Trela, J.
Powiązania:
https://bibliotekanauki.pl/articles/2030644.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
68.55.Ln
Opis:
The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 689-699
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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