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Wyszukujesz frazę "Wachnicki, E." wg kryterium: Autor

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    Wyświetlanie 1-12 z 12
    Tytuł:
    Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
    Autorzy:
    Witkowski, B.
    Wachnicki, Ł.
    Jakieła, R.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492546.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Hk
    77.55.hf
    68.37.Hk
    61.72.Ff
    Opis:
    Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of thin films of high-k oxides grown by atomic layer deposition at low temperature for electronic applications
    Autorzy:
    Gieraltowska, S
    Wachnicki, Ł
    Witkowski, B S
    Godlewski, M
    Guziewicz, E
    Powiązania:
    https://bibliotekanauki.pl/articles/173591.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    high-k oxides
    composite layers
    atomic layer deposition
    transparent electronics
    zinc oxide
    Opis:
    Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics. In this work, we present the comparison of structural, morphological and electrical properties of binary and composite layers of high-k oxides that include hafnium dioxide (HfO2), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). We deposit thin films of high-k oxides using atomic layer deposition (ALD) and low growth temperature (60–240 °C). Optimal technological growth parameters were selected for the maximum smoothness, amorphous microstructure, low leakage current, high dielectric strength of dielectric thin films, required for gate applications. High quality of the layers is confirmed by their introduction to test electronic structures, such as thin film capacitors, transparent thin film capacitors and transparent thin film transistors. In the latter structure we use semiconductor layers of zinc oxide (ZnO) and insulating layers of high-k oxide grown by the ALD technique at low temperature (no more than 100 °C).
    Źródło:
    Optica Applicata; 2013, 43, 1; 17-25
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method
    Autorzy:
    Wachnicki, Ł.
    Witkowski, B.
    Gierałtowska, S.
    Kopalko, K.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492916.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Bc
    82.47.Rs
    68.55.-a
    81.15.Aa
    Opis:
    Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 905-907
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of ZnO Films Grown at Low Temperature
    Autorzy:
    Przeździecka, E.
    Krajewski, T.
    Wójcik-Głodowska, A.
    Yatsunenko, S.
    Łusakowska, E.
    Paszkowicz, W.
    Guziewicz, E.
    Wachnicki, Ł.
    Szczepanik, A.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811975.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    81.10.-h
    85.30.Fg
    Opis:
    ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1303-1310
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO by ALD - Advantages of the Material Grown at Low Temperature
    Autorzy:
    Guziewicz, E.
    Godlewski, M.
    Krajewski, T.
    Wachnicki, Ł.
    Łuka, G.
    Paszkowicz, W.
    Domagała, J.
    Przeździecka, E.
    Łusakowska, E.
    Witkowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791286.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    72.80.Ey
    Opis:
    The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 814-817
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture
    Autorzy:
    Godlewski, M.
    Guziewicz, E.
    Gierałtowska, S.
    Łuka, G.
    Krajewski, T.
    Wachnicki, Ł.
    Kopalko, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807598.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.35.-p
    73.40.Lq
    73.40.Qv
    81.05.Dz
    81.15.-z
    Opis:
    We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator $HfO_{2}$. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-19-S-21
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
    Autorzy:
    Gierałtowska, S.
    Sztenkiel, D.
    Guziewicz, E.
    Godlewski, M.
    Łuka, G.
    Witkowski, B. S.
    Wachnicki, Ł.
    Łusakowska, E.
    Dietl, T.
    Sawicki, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048118.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    77.55.-g
    77.84.Bw
    81.05.Ea
    Opis:
    We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 692-695
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition
    Autorzy:
    Łuka, G.
    Krajewski, T.
    Szczerbakow, A.
    Łusakowska, E.
    Kopalko, K.
    Guziewicz, E.
    Wachnicki, Ł.
    Szczepanik, A.
    Godlewski, M.
    Fidelus, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811956.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.J-
    73.40.Lq
    81.05.Lg
    Opis:
    We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1229-1234
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    (Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties
    Autorzy:
    Łukasiewicz, M.
    Witkowski, B.
    Wachnicki, Ł.
    Kopalko, K.
    Gierałtowska, S.
    Wittlin, A.
    Jaworski, M.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492571.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-034-A-036
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Si/ZnO nanorods with Ag nanoparticles/AZO heterostructures in PV applications
    Autorzy:
    Gwóźdź, K.
    Płaczek-Popko, E.
    Gumienny, Z.
    Zielony, E.
    Pietruszka, R.
    Witkowski, B. S.
    Wachnicki, Ł.
    Gierałtowska, S.
    Godlewski, M.
    Chang, L. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/201432.pdf
    Data publikacji:
    2016
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    solar cells
    ZnO
    Si
    heterojunction
    nanorods
    nanoparticles
    ogniwa słoneczne
    nanopręty
    nanocząstki
    Opis:
    Our studies focus on test structures for photovoltaic applications based on zinc oxide nanorods grown using a low-temperature hydrothermal method on a p-type silicon substrate. The nanorods were covered with silver nanoparticles of two diameters – 20–30 nm and 50–60 nm – using a sputtering method. Scanning electron microscopy (SEM) micrographs showed that the deposited nanoparticles had the same diameters. The densities of the nanorods were obtained by means of atomic force microscope (AFM) images. SEM images and Raman spectroscopy confirmed the hexagonal wurtzite structure of the nanorods. Photoluminescence measurements proved the good quality of the samples. Afterwards an atomic layer deposition (ALD) method was used to grow ZnO:Al (AZO) layer on top of the nanorods as a transparent electrode and ohmic Au contacts were deposited onto the silicon substrate. For the solar cells prepared in that manner the current-voltage (I-V) characteristics before and after the illumination were measured and their basic performance parameters were determined. It was found that the spectral characteristics of a quantum efficiency exhibit an increase for short wavelengths and this behavior has been linked with the plasmonic effect.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 529-533
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors
    Autorzy:
    Łukasiewicz, M.
    Wójcik-Głodowska, A.
    Guziewicz, E.
    Jakieła, R.
    Krajewski, T.
    Łusakowska, E.
    Paszkowicz, W.
    Minikayev, R.
    Kiecana, M.
    Sawicki, M.
    Godlewski, M.
    Wachnicki, Ł.
    Szczepanik, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811957.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature ($T_s$=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1235-1240
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
    Autorzy:
    Wachnicki, Ł.
    Dużyńska, A.
    Domagala, J.
    Witkowski, B.
    Krajewski, T.
    Przeździecka, E.
    Guziewicz, M.
    Wierzbicka, A.
    Kopalko, K.
    Figge, S.
    Hommel, D.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492723.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Aa
    61.05.cp
    81.05.Dz
    Opis:
    Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and $Al_2O_3$. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-007-A-010
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-12 z 12

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