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    Wyświetlanie 1-11 z 11
    Tytuł:
    Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells
    Autorzy:
    Zieleniewski, K.
    Pakuła, K.
    Bożek, R.
    Masztalerz, K.
    Wysmołek, A.
    Stępniewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048083.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.De
    77.55.hn
    81.15.Gh
    Opis:
    We report studies on electric field built in GaN/Al$\text{}_{0.09}$Ga$\text{}_{0.91}$N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visible and mid infra-red interference pattern along the sample, the layer thickness and consequently the quantum well width was determined to vary linearly with the position. Secondly, photoluminescence spectra was taken at different positions. Correlation of those two measurements allows us to determine the built-in electric field to be 0.66 MV/cm, which is considerably larger than previously reported for similar structures.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 657-659
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Time Evolution of the Microluminescence Energy οf GaN/AlGaN Quantum Dots
    Autorzy:
    Surowiecka, K.
    Wysmołek, A.
    Stępniewski, R.
    Bożek, R.
    Pakuła, K.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791354.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Time evolution of the microphotoluminescence from low-density GaN/$Al_{x}Ga_{1-x}N$ quantum dots grown by metal organic chemical vapor deposition using in situ etching of AlGaN is presented. The observed effect is related to the energy changes that begin immediately after sample illumination with the exciting laser light and saturate after some time. Typically, the luminescence energy decreases and the change is exponential with characteristic times in a range between several dozen and several hundred seconds. However, sometimes we observed the energy increase with characteristic times in a range between several and a few hundred seconds. The obtained results are discussed in terms of the metastable change of the electric field, induced by spontaneous polarization present in GaN/AlGaN structure (in the growth direction), and strain- or defect-induced changes of the electric field in the vicinity of the dot.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 933-935
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Single GaN/AlGaN Quantum Dot Spectroscopy
    Autorzy:
    Surowiecka, K.
    Wysmołek, A.
    Stępniewski, R.
    Bożek, R.
    Pakuła, K.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047382.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The detailed analysis of the emission from these structures enables the observation of pairs of lines separated by the energy up to 3 meV. They behave in a different way under different excitation power that suggests that this doublet structure can be associated with the exciton and trion (or biexciton recombination). It is observed that for different quantum dots the energy of the charged exciton complex emission could be higher or lower than the neutral exciton one. It is discussed in terms of a competition between attractive e-h and repulsive e-e (h-h) Coulomb interaction that occurs because of the existence of the built-in electric field that separates electrons and holes in the dot.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 233-236
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temporal Evolution of Multi-Carrier Complexes in Single GaN/AlGaN Quantum Dots
    Autorzy:
    Surowiecka, K.
    Wysmołek, A.
    Stępniewski, R.
    Bożek, R.
    Pakuła, K.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044542.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 879-884
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Light Induced Modification of Graphene Oxide Layers on GaN Basis
    Autorzy:
    Łopion, A.
    Stobiński, L.
    Pakuła, K.
    Bożek, R.
    Kaźmierczak, P.
    Wysmołek, A.
    Stępniewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1185429.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.-f
    78.55.-m
    78.30.-j
    07.05.Kf
    Opis:
    Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1169-1171
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Stępniewski, R.
    Pakuła, K.
    Kossacki, P.
    Golnik, A.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038084.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    78.67.Hc
    75.75.+a
    68.65.Hb
    Opis:
    We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 517-521
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and optical properties of boron nitride grown by MOVPE
    Autorzy:
    Dąbrowska, A.
    Pakuła, K.
    Bożek, R.
    Rousset, J.
    Ziółkowska, D.
    Gołasa, K.
    Korona, K.
    Wysmołek, A.
    Stępniewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160531.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    78.30.Fs
    78.20.-e
    Opis:
    Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Potential and Carrier Distribution in AlGaN Superlattice
    Autorzy:
    Korona, K. P.
    Pakuła, K.
    Bożek, R.
    Drabińska, A.
    Surowiecka, K.
    Stępniewski, R.
    Zielińska-Rohozińska, E.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043725.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    73.61.Ey
    73.21.Cd
    Opis:
    Photocurrent spectroscopy and Kelvin force microscopy have been used in order to determine charge, field, and potential distributions in spontaneously grown superlattice. The spectra show that light can generate currents and potentials in both directions depending on photon energy. A numerical model made for superlattice of periodλ$\text{}_{SL}$ = 33 nm shows that electric field in superlattice oscillates coherently with Al content. The oscillations of electric field explain the different directions of photocurrent. The electric field can also separate electrons and holes, making carrier lifetimes longer and lowering excitation intensity threshold for occupation inversion.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 723-729
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
    Autorzy:
    Pakula, K.
    Baranowski, J. M.
    Stępniewski, R.
    Wysmołek, A.
    Grzegory, I.
    Jun, J.
    Porowski, S.
    Sawicki, M.
    Starowieyski, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933937.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.55.Cr
    Opis:
    The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 861-864
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Coupling of LO Phonons to Excitons in GaN
    Autorzy:
    Wysmołek, A.
    Łomiak, P.
    Baranowski, J. M.
    Pakuła, K.
    Stępniewski, R.
    Korona, K. P.
    Grzegory, I.
    Boćkowski, M.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952430.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    63.20.Mt
    71.55.Eq
    Opis:
    The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 981-984
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Korona, K. P.
    Stępniewski, R.
    Knap, W.
    Pakuła, K.
    Baranowski, J. M.
    Grandjean, N.
    Massies, J.
    Prystawko, P.
    Grzegory, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036024.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.20.-r
    73.21.-b
    74.40.+k
    Opis:
    Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 573-578
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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