- Tytuł:
- Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon $p^{+}n$-Diodes
- Autorzy:
-
Poklonski, N.
Gorbachuk, N.
Tarasik, M.
Shpakovski, S.
Filipenia, V.
Skuratov, V.
Wieck, A.
Kołtunowicz, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1503994.pdf
- Data publikacji:
- 2011-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Jv
61.80.Fe - Opis:
- The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Krypton ions are implanted to the side of the $p^{+}$-region of diodes (energy 107 MeV, fluence Φp from 5 × $10^7$ to 4 × $10^9 cm^{-2}$). It is shown that recovery charge $Q_{rr}$ is inversely proportional to the square root of the irradiation fluence value Φp. When the fluence increases, the part of the recovery charge Q_{rrA}, due to the high reverse conductance phase, decreases faster than the value $Q_{rr}$.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 1; 111-114
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł