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Wyświetlanie 1-15 z 39
Tytuł:
Interaction between Thin Films of Zinc and (100) GaAs
Autorzy:
Kamińska, E.
Piotrowska, A.
Żarecka, R.
Mizera, E.
Powiązania:
https://bibliotekanauki.pl/articles/1929624.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360°C the formation of Zn$\text{}_{3}$As$\text{}_{2}$ phase, highly oriented with respect to the (100) substrate takes place.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 527-529
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces
Autorzy:
Kamińska, E.
Piotrowska, A.
Kasjaniuk, S.
Gierlotka, S.
Powiązania:
https://bibliotekanauki.pl/articles/1950962.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 843-846
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Phosphorus Release during Annealing of Au Contacts to InP
Autorzy:
Piotrowska, A.
Kamińska, E.
Kwiatkowski, S.
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/1923864.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The analysis of phosphorus release from Au/InP contacts heat treated at temperature from the range 360-480°C showed that P evaporation accompanies any stage of contact reaction. The use of encapsulating layer during contact annealing suppresses the loss of phosphorus and changes the kinetics of thermally activated interfacial reaction.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 849-852
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interfacial Reactions between Thin Films of Zinc and (100)InP
Autorzy:
Kamińska, E.
Piotrowska, A.
Barcz, A.
Mizera, E.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1933803.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn$\text{}_{3}$P$\text{}_{2}$ phase lattice matched to InP.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 771-774
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation
Autorzy:
Łusakowski, J.
Knap, W.
Kamińska, E.
Piotrowska, A.
Gavrilenko, V.
Powiązania:
https://bibliotekanauki.pl/articles/2035755.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.30.+q
73.61.Ey
Opis:
Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 545-551
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition
Autorzy:
Borysiewicz, M.
Wojciechowski, T.
Dynowska, E.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1198573.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.70.-m
81.15.Cd
77.55.hf
81.10.Pq
52.27.Cm
Opis:
Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1144-1148
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
Autorzy:
Taube, A.
Sochacki, M.
Szmidt, J.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/226802.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
gallium nitride
MOS-HEMT
high electron mobility
transistor
AlGaN
GaN
simulation
Opis:
The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
Źródło:
International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs
Autorzy:
Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/1923915.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 857-860
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Direct Measurements of Arsenic and Phosphorus Evolution During Cap-Annealing of Gold-Based Metallizations on GaAs and InP
Autorzy:
Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Veresegyhazy, R.
Mojzes, I.
Pecz, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891383.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Evolution of arsenic and phosphorus during heat treatment of unprotected and encapsulated Au, AuZn and AuGeNi contacts on GaAs and InP has been examined and correlated with their ohmic behavior.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 457-460
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts
Autorzy:
Kamińska, E.
Piotrowska, A.
Żarecka, R.
Barcz, A.
Mizera, E.
Kwiatkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1923883.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 853-856
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
Autorzy:
Borysiewicz, M.
Kamińska, E.
Piotrowska, A.
Pasternak, I.
Jakieła, R.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1811915.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.49.Sf
68.55.ag
81.40.Ef
Opis:
Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1061-1066
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
Autorzy:
Taube, A.
Kruszka, R.
Borysiewicz, M.
Gierałtowska, S.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492515.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.dj
77.22.Ch
73.40.Qv
81.15.Gh
81.15.Cd
Opis:
The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-022-A-024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Non-Ohmic Conductivity of High Resistivity CdTe
Autorzy:
Łusakowski, J.
Szczytkowski, J.
Szadkowski, K.
Kamińska, E.
Piotrowska, A.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1933850.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.-r
Opis:
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown layers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the current flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 803-806
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors
Autorzy:
Kaczmarski, J.
Taube, A.
Dynowska, E.
Dyczewski, J.
Ekielski, M.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399114.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Gc
81.15.Cd
85.30.Tv
72.80.Ng
73.61.Jc
Opis:
In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of $12 cm^2/(Vs)$ has been demonstrated.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 855-857
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN
Autorzy:
Matys, M.
Miczek, M.
Adamowicz, B.
Żytkiewicz, Z.
Kamińska, E.
Piotrowska, A.
Hashizume, T.
Powiązania:
https://bibliotekanauki.pl/articles/1492736.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
71.35.-y
73.20.-r
71.55.-i
02.70.Dh
Opis:
The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from $10^{15}$ to $10^{19}$ photon $cm^{-2} s^{-1}$) for n-GaN samples with various surface passivating layers $(Al_2O_3, SiO_2)$.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-073-A-075
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 39

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