Wszystkie pola: 68.60.-p - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Nonradiative Recombination Processes in (CdTe,CdCrTe)/CdMgTe Quantum Well Structures
Autorzy:: Godlewski, M.
Ivanov, V.
Zakrzewski, A. J.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1968108.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.60.-p
76.70.Hb
Opis:: Photoluminescence transitions in (CdTe,CdCrTe)/CdMgTe structure grown by molecular beam epitaxy are studied. Photoluminescence investigations show a very strong reduction of the photoluminescence intensity from chromium doped quantum wells. We explain this fact by a very efficient nonradiative recombination in the chromium-doped quantum wells. The present results indicate that the Auger-type energy transfer from excitons to chromium ions is responsible for the photoluminescence deactivation. The efficiency of this process is evaluated.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 781-784
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Optical Characterization of CdZnSe/ZnSe Multiquantum Well System
Autorzy:: Godlewski, M.
Karpińska, K.
Bergman, J. P.
Monemar, B.
Kurtz, E.
Hommel, D.
Powiązania:: https://bibliotekanauki.pl/articles/1932081.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.60.-p
71.35.+z
76.70.Hb
Opis:: Optical properties of Cd$\text{}_{x}$Zn$\text{}_{1-x}$Se/ZnSe (x = 0.12) multiquantum well system are discussed. The transient photoluminescence and optically detected cyclotron resonance experiments demonstrate a strong contribution of bound exciton emission to the low temperature photoluminescence spectra.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 209-212
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:: Godlewski, M.
Bergman, J. P.
Monemar, B.
Kurtz, E.
Hommel, D.
Powiązania:: https://bibliotekanauki.pl/articles/1950749.pdf
Data publikacji:: 1996-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.60.-p
71.35.+z
76.70.Hb
Opis:: The results of investigations of photoluminescence, time-resolved photoluminescence, photoluminescence kinetics and their temperature dependencies are discussed for two types of ZnCdSe/ZnSe multi quantum well structures - for pseudomorphic and for strain relaxed structure. Densities of 2D localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. We show distinct differences between exciton properties in two multi quantum well structures studied.
Źródło:: Acta Physica Polonica A; 1996, 90, 4; 785-788
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Exciton Dynamics in CdTe/CdMnTe Multiquantum Well Structures Grown by Molecular Beam. Epitaxy on GaAs Substrate
Autorzy:: Godlewski, M.
Koziarska, B.
Suchocki, A.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Bergman, J.
Monemar, B.
Powiązania:: https://bibliotekanauki.pl/articles/1934057.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.60.-p
78.47.+p
73.20.Fz
71.35.+z
Opis:: The results of picosecond photoluminescence kinetics of four different CdTe/CdMnTe multiquantum well structures grown by MBE on GaAs substrates are presented. The experimental results show that excitons in CdTe quantum wells are strongly localized by potential fluctuations. Photoluminescence decay times of the localized excitons are considerably shorter (about 120 ps) than those reported for free or quasi-free excitons. An influence of Mn in the barriers on exciton properties is demonstrated. For narrow quantum wells as well as for the multiquantum well structure with the highest Mn mole fraction the excitons migrate during their decay to the states with a lower potential energy. Longer decay times are observed for quasi-localized excitons. We show also that for strongly localized excitons the energy transfer between localized and donor bound excitons is less efficient.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 985-989
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime
Autorzy:: Buyanov, A. V.
Holtz, P. O.
Pozina, G.
Monemar, B.
Thordson, J.
Andersson, T. G.
Powiązania:: https://bibliotekanauki.pl/articles/1968047.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.60.+g
61.72.Vv
68.55.Ln
Opis:: We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 727-732
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja