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    Wyświetlanie 1-5 z 5
    Tytuł:
    The Features of Real Part of Admittance in the Nanocomposites $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ Manufactured by the Ion-Beam Sputtering Technique with Ar Ions
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Fedotova, V.
    Saad, A.
    Larkin, A.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503798.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.Rf
    73.22.-f
    84.37.+q
    72.20.Ee
    Opis:
    The temperature and frequency dependences of the admittance real part σ (T, f) in granular $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ nanocomposite films around the percolation threshold $x_{C}$ were investigated. The behaviour of σ (T, f) vs. the temperature and frequency over the ranges 77-300 K and 50 Hz-1 MHz, respectively, displays the predominance of an activation (hopping) conductance mechanism for the samples below the percolation threshold $x_{C}$ and of a metallic one beyond the $x_{C}$ determined as 54 ± 2 at.%. The mean hopping range d for the nanoparticles diameter D was estimated at different metallic phase content x.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 35-38
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hopping Conductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ Manufactured by Ion-Beam Sputtering of Complex Target in $Ar+O_2$ Ambient Gas
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Fedotova, V.
    Saad, A.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503812.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.Rf
    73.22.-f
    84.37.+q
    72.20.Ee
    Opis:
    We report the investigation of a real part of the admittance σ of granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ with 0.30 < x < 0.70 in the dielectric (hopping) regime. An analysis of the σ(T, f, x) dependences in the as-deposited and annealed films over the temperature 77 K < T < 300 K and frequency 50 < f < $10^6$ Hz ranges displayed the predominance of an activation (hopping) conductance mechanism with dσ/ dT > 0 for the samples below the percolation threshold $x_{C}$ ≈ 0.76 ± 0.05. Based on the earlier models for hopping AC conductance, computer simulation of the frequency coefficient $α_{f}$ of hopping conductance depending on the probability of jump p, frequency f, and also on the shape of σ(f) curve was performed. The experimental and simulation results revealed a good agreement.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 39-42
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Noncoil-Like Inductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Manufactured by Ion-Beam Sputtering of Complex Targets in $Ar+O_2$ Atmosphere
    Autorzy:
    Zhukowski, P.
    Kołtunowicz, T.
    Węgierek, P.
    Fedotova, J.
    Fedotov, A.
    Larkin, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503848.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.22.-f
    81.40.Ef
    84.37.+q
    72.20.Ee
    Opis:
    This paper investigates the inductive contribution to AC conductance in the granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$. The initial nanocomposites studied were manufactured in $Ar+O_2$ atmosphere by ion-beam sputtering of the target containing $Fe_{0.45}Co_{0.45}Zr_{0.10}$ and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < $T_{a}$ < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < $T_{p}$ < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f). Analysis of the observed σ (f, $T_{p}$) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle - 90° ≤ $\Theta_{L}$ < 0° are exhibited at low frequencies and the inductive properties with 0° ≤ $\Theta_{H}$ < 90° become apparent at high frequencies. A value of the critical frequency $f_{R}$, where $\Theta_{H}$ changes sign, depends on the metallic phase concentration x, measuring temperature $T_{p}$, and annealing temperature $T_{a}$.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 43-45
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Annealing of $(CoFeZr)_{x}(CaF_2)_{100-x}$ Nanocomposites Produced by the Ion-Beam Sputtering in the Ar and $O_2$ Ambient
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Bondariev, V.
    Fedotova, J.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400483.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.23.Pq
    79.20.Rf
    81.40.Ef
    72.80.Le
    Opis:
    This paper presents the investigations of electrical properties and effect of annealing on conductivity of $(CoFeZr)_{x}(CaF_2)_{100-x}$ nanocomposites produced by ion-beam sputtering in the Ar and $O_2$ ambient. Investigations into conductivity of $(CoFeZr)_{x}(CaF_2)_{100-x}$ nanocomposites depending on the measuring temperature and the annealing temperature have been performed. The application of a combined argon-oxygen beam brings about lowering of the potential barrier on the surface of nanoparticles. In the course of annealing the additional oxidation occurs. First it proceeds on the surface and then all through the metallic-phase particles.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 932-934
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetoresistance in n-Si/$SiO_2$/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology
    Autorzy:
    Fedotova, J.
    Ivanou, D.
    Ivanova, Y.
    Fedotov, A.
    Mazanik, A.
    Svito, I.
    Streltsov, E.
    Saad, A.
    Tyutyunnikov, S.
    Kołtunowicz, T.
    Demyanov, S.
    Fedotova, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504014.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    81.05.Rm
    73.22.-f
    73.50.Jt
    Opis:
    A study of magnetotransport in the n-Si/$SiO_2$/Ni nanostructures with granular Ni nanorods in $SiO_2$ pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/$SiO_2$/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 133-135
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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