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Wyświetlanie 1-13 z 13
Tytuł:
Growth and Properties of ZnMnTe Nanowires
Autorzy:
Zaleszczyk, W.
Janik, E.
Presz, A.
Szuszkiewicz, W.
Morhange, J. F.
Dłużewski, P.
Kret, S.
Kirmse, H.
Neumann, W.
Dynowska, E.
Domagała, J. Z.
Caliebe, W.
Aleszkiewicz, M.
Pacuski, W.
Golnik, A.
Kossacki, P.
Baczewski, L. T.
Petroutchik, A.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/2047697.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.Df
68.65.La
78.55.Et
78.67.Bf
81.15.Hi
Opis:
Catalytically enhanced growth of ZnMnTe diluted magnetic semiconductor nanowires by molecular beam epitaxy is reported. The growth is based on the vapor-liquid-solid mechanism and was performed on (001) and (011)-oriented GaAs substrates from elemental sources. X-ray diffractometry, scanning and transmission electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman scattering were performed to determine the structure of nanowires, their chemical composition, and morphology. These studies revealed that the obtained ZnMnTe nanowires possess zinc-blende structure, have an average diameter of about 30 nm, typical length between 1 and 2μm and that Mn$\text{}^{2+}$ ions were incorporated into substitutional sites of the ZnTe crystal lattice.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 351-356
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Properties of ZnO Nanowires Grown on Ni Substrate
Autorzy:
Zaleszczyk, W.
Fronc, K.
Przeździecka, E.
Janik, E.
Czapkiewicz, M.
Wróbel, J.
Paszkowicz, W.
Kłopotowski, Ł.
Karczewski, G.
Wojtowicz, T.
Presz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1812028.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Bf
81.05.Dz
81.07.Bc
Opis:
Photoluminescence studies of zinc oxide nanowires produced by a carbo-thermal method on a nickel foil substrate are reported. Two types of as-grown samples: the first - containing only buffer film, and the second - containing both zinc oxide nanowires and buffer film grown in the same technological process, were investigated by means of the temperature-dependent photoluminescence. X-ray diffraction measurements of buffer film show that it is polycrystalline and is composed from wurtzite-type ZnO (main phase) and includes minority phases: rock salt type (Ni,Zn)O and hexagonal C₃N₄. The shape of the apparently monocrystalline nanowires is characterized by hexagonal section matching with the expectations of the hexagonal ZnO structure. The presence of LO-phonon replicas in photoluminescence spectra for the second sample is used as an argument for confirmation that ZnO nanowires are single crystalline. The method of growth of ZnO nanowires on nickel oxide opens perspectives to produce $Zn_{1-x}Ni_{x}O$ diluted magnetic semiconductor nanowires.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1451-1456
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cubic MnTe - Growth by Molecular Beam Epitaxy and Basic Structural Characterization
Autorzy:
Zakrzewski, A.
Janik, E.
Dynowska, E.
Leszczyński, M.
Kutrowski, M.
Wojtowicz, T.
Karczewski, G.
Bąk-Misiuk, J.
Domagała, J.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1873112.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
68.55.Bd
68.55.Jk
Opis:
We report on growth by molecular beam epitaxy of thick layers of MnTe with zinc blende structure. Films as thick as 5.6 µm were obtained. Characterization by X-ray diffraction proved their good structural quality. We determined the lattice constant and its temperature dependence. Broad luminescence due to internal Mn$\text{}^{2+}$- transitions was observed. It showed an unexpected temperature dependence.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 433-436
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Digital Magnetic Quantum Wells for the Study of Interface Sharpness of Molecular Beam Epitaxy Grown Structures
Autorzy:
Wojtowicz, T.
Karczewski, G.
Żakrzewski, A.
Kutrowski, M.
Janik, E.
Dynowska, E.
Kopalko, K.
Kret, S.
Kossut, J.
Laval, J. Y.
Powiązania:
https://bibliotekanauki.pl/articles/1931933.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
78.55.Et
Opis:
We report on the growth and basic characterization of digital magnetic quantum wells, that is, quantum wells in which the well material is itself a short period superlattice composed of alternating diluted magnetic and nonmagnetic semiconductor layers each only a few monolayers thick. These novel structures can be useful in a variety of studies, including studies of barrier-well interface sharpness.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 165-168
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Characterization of MBE-Grown Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Layers by Raman Spectroscopy
Autorzy:
Szuszkiewicz, W.
Dynowska, E.
Janik, E.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Jouanne, M.
Powiązania:
https://bibliotekanauki.pl/articles/1945228.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.-e
75.50.Pp
78.30.-j
Opis:
In this paper we discuss a possibility of an optical characterization of thin semiconductor epilayers by Raman scattering measurements. As an example zinc blende Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te epilayers (0.66 ≤ x ≤ 1.0) have been grown by molecular beam epitaxy method and investigated by Raman scattering and X-ray diffraction. Information resulting from both methods is compared and discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 335-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Characterization of Molecular Beam Epitaxy Grown $Cd_{1-x}$Mn$\text{}_{x}$Te Structures
Autorzy:
Sawicki, M.
Kolesnik, S.
Wojtowicz, T.
Karczewski, G.
Janik, E.
Kutrowski, M.
Żakrzewski, A.
Dynowska, E.
Dietl, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1931934.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.-y
75.50.Rr
75.50.Ee
Opis:
The paper reports on the application of SQUID magnetometry to probe magnetic ion distribution in epilayers and at interfaces of diluted magnetic semiconductors. We present also new results on the possible influence of the magnetic confinement on the formation of the spin-glass phase, and on antiferromagnetic phase transition in zinc-blende MnTe.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 169-172
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:
Kutrowski, M.
Wojtowicz, T.
Cywiński, G.
Karczewski, G.
Janik, E.
Dynowska, E.
Kossut, J.
Kossacki, P.
Fiederling, R.
Pfeuffer-Jeschke, A.
Ossau, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968307.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
78.66.Hf
Opis:
We report on magnetooptical studies of MBE-grown half-parabolic CdTe/Cd$\text{}_{x}$Mn$\text{}_{1-x}$Te quantum well structures. The value of the valence band offset Q$\text{}_{v}$=0.4 ± 0.05 was determined by comparing energies of optical transitions in the absence of a magnetic field with model calculations. This value was verified by fitting the observed spin splitting of the lowest heavy hole (hh) state. We discuss also the temperature dependence of Q$\text{}_{v}$.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 887-890
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Study of Photoluminescence from Deep CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Quantum Wells
Autorzy:
Kutrowski, M.
Wojtowicz, T.
Karczewski, G.
Kopalko, K.
Zakrzewski, A. K.
Janik, E.
Grasza, K.
Łusakowska, E.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876361.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
78.55.Et
Opis:
The photoluminescence studies in CdTe/CdMnTe quantum wells are reported in the temperature range 10-300 K. The MnTe concentration in the barriers is x = 0.3, 0.5, 0.63 and 0.68. Thus the potential wells in our samples are very deep, of the order of ≈ 800 meV in the conduction band and ≈ 200 meV in the valence band in the case of the x = 0.68 sample. In spite of the large lattice mismatch (related to high x value) between the wells and the barriers the observed line widths are as narrow as 2 meV in the case of 100 Å. Clear manifestations of internal strain are observed. In particular, the temperature coefficient of the luminescence energies shows strong dependence on the width of wells.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 500-504
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence Decay in Deep Quantum Wells CdTe/Cd_{0.5}Mn_{0.5}Te at Room Temperature
Autorzy:
Kowalczyk, L.
Fancey, S.
Buller, G.
Massa, J.
Kutrowski, M.
Janik, E.
Karczewski, G.
Wojtowicz, T.
Zakrzewski, A.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876908.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
78.47.+p
78.55.Et
Opis:
Time-resolved photoluminescence was used to study exciton recombination in deep CdTe/Cd_{0.5}Mn_{0.5}Te single quantum well. The width of the investigated well was 100 A. The study was performed at room temperature. The lifetime of the exciton determined in this work has a value comparable to that observed in shallow CdTe/Cd_{0.85}Mn_{0.15}Te quantum wells. A strong enhancement of the photoluminescence decay time with increasing intensity of the exciting laser beam is observed which is indicative of saturation of the non-radiative recombination centers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 508-513
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Indium Doping of CdTe Grown by Molecular Beam Epitaxy
Autorzy:
Karczewski, G.
Zakrzewski, A.
Kutrowski, M.
Jaroszyński, J.
Dobrowolski, W.
Grodzicka, E.
Janik, E.
Wojtowicz, T.
Kossut, J.
Barcz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1932089.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
Opis:
We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 241-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO
Autorzy:
Gas, K.
Janik, E.
Zaleszczyk, W.
Pasternak, I.
Dynowska, E.
Fronc, K.
Kolkovsky, V.
Kret, S.
Morhange, J. F.
Reszka, A.
Wiater, M.
Caliebe, W.
Karczewski, G.
Kowalski, B. J.
Szuszkiewicz, W.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/2047950.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Hk
68.37.Lp
68.65.La
81.07.Vb
Opis:
We report on an approach to fabricate ZnTe-based core/shell radial heterostructures containing ZnO, as well as on some of their physical properties. The molecular beam epitaxy grown ZnTe nanowires constituted the core of the investigated structures and the ZnO shells were obtained by thermal oxidation of ZnTe NWs. The influence of the parameters characterizing the oxidation process on selected properties of core/shell NWs were examined. Scanning electron microscopy revealed changes of the NWs morphology for various conditions of the oxidation process. X-ray diffraction, high resolution transmission electron microscopy, and Raman scattering measurements were applied to reveal the presence of ZnTe single crystal core and polycrystalline ZnO-shell of investigated structure.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 612-614
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Elastic Properties of Zinc Blende MnTe
Autorzy:
Djemia, P.
Roussigné, Y.
Stashkevich, A.
Szuszkiewicz, W.
Gonzalez Szwacki, N.
Dynowska, E.
Janik, E.
Kowalski, B. J.
Karczewski, G.
Bogusławski, P.
Jouanne, M.
Morhange, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038250.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.Dc
75.50.Pp
78.35.+c
Opis:
The Brillouin light scattering was used to investigate elastic properties of the zinc blende, MBE-grown MnTe layer that was deposited on a (001) GaAs substrate covered by CdTe buffer layer. The three elastic constants of the zinc blende MnTe, namely c$\text{}_{11}$, c$\text{}_{12}$, and c$\text{}_{44}$, were directly determined for the first time from the frequency of the Rayleigh mode, of the pseudo-surface mode, and of the shear horizontal bulk mode traveling parallel to the layer surface. The value of c$\text{}_{11}$ was checked using the frequency of longitudinal bulk waves propagating at different angles from the normal of the layer plane. This value was also independently determined by results of the folding of acoustic phonons, observed for MnTe/CdTe superlattices by the Raman scattering. Finally, the bulk modulus given by the formula B=(c$\text{}_{11}$+2c$\text{}_{12}$)/3 was determined for zinc blende MnTe by ab initio calculations making use of the density functional theory and atomic pseudopotentials; spin polarization of MnTe was taken into account. A satisfactory agreement between theoretical and experimental values was obtained.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 239-247
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Atomic Force Microscopy Study of a Voltage Effect on CdZnTe Crystal Dimensions
Autorzy:
Aleszkiewicz, P.
Wojciechowski, T.
Fronc, K.
Kolkovsky, V.
Janik, E.
Jakieła, R.
Mycielski, A.
Karczewski, G.
Aleszkiewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811911.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
73.61.Ga
77.90.+k
Opis:
In this work we studied the influence of an external electric voltage on spatial dimensions of CdZnTe mixed crystals. In order to get an absolute magnitude of the sample thickness and to gain insight to the changes of lateral dimension, in quasi-bulk 3 μm thick CdZnTe layers grown by molecular beam epitaxy square craters were formed by ion sputtering in a secondary ion mass spectrometer. The vertical and lateral dimensions of the craters were studied by the atomic force microscopy. The atomic force microscopy measurement revealed that the thickness of the CdZnTe layer increases in a result of applying a single voltage pulse to the sample surface and decreases reversibly after applying reversely biased voltage. The voltage triggering was high enough to switch the conductivity state of the sample i.e., the effect of thickness change is accompanied by the effect of conductivity switching. The thickness change is significant, reaching several percents of the entire layer thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1041-1047
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-13 z 13

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