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    Wyświetlanie 1-7 z 7
    Tytuł:
    Structure Dependent Conductivity of Ultrathin ZnO Films
    Autorzy:
    Snigurenko, D.
    Kopalko, K.
    Krajewski, T.
    Łuka, G.
    Gierałtowska, S.
    Witkowski, B.
    Godlewski, M.
    Dybko, K.
    Paszkowicz, W.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403646.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    81.15.Gh
    Opis:
    Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1042-1044
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO by ALD - Advantages of the Material Grown at Low Temperature
    Autorzy:
    Guziewicz, E.
    Godlewski, M.
    Krajewski, T.
    Wachnicki, Ł.
    Łuka, G.
    Paszkowicz, W.
    Domagała, J.
    Przeździecka, E.
    Łusakowska, E.
    Witkowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791286.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    72.80.Ey
    Opis:
    The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 814-817
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of ZnO Films Grown at Low Temperature
    Autorzy:
    Przeździecka, E.
    Krajewski, T.
    Wójcik-Głodowska, A.
    Yatsunenko, S.
    Łusakowska, E.
    Paszkowicz, W.
    Guziewicz, E.
    Wachnicki, Ł.
    Szczepanik, A.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811975.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    81.10.-h
    85.30.Fg
    Opis:
    ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1303-1310
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
    Autorzy:
    Łukasiewicz, M.
    Witkowski, B.
    Godlewski, M.
    Guziewicz, E.
    Sawicki, M.
    Paszkowicz, W.
    Łusakowska, E.
    Jakieła, R.
    Krajewski, T.
    Kowalik, I.
    Kowalski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791350.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 921-923
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor
    Autorzy:
    Kowalik, I. A.
    Guziewicz, E.
    Kopalko, K.
    Yatsunenko, S.
    Godlewski, M.
    Wójcik, A.
    Osinniy, V.
    Krajewski, T.
    Story, T.
    Łusakowska, E.
    Paszkowicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047710.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.66.Hf
    81.15.Kk
    Opis:
    ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 401-406
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration
    Autorzy:
    Grzanka, S.
    Łuka, G.
    Krajewski, T. A.
    Guziewicz, E.
    Jachymek, R.
    Purgal, W.
    Wiśniewska, R.
    Sarzyńska, A.
    Bering-Staniszewska, A.
    Godlewski, M.
    Perlin, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048094.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ey
    73.40.Kp
    73.40.Lq
    Opis:
    Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10$\text{}^{17}$ cm$\text{}^{-3}$. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10$\text{}^{20}$ cm$\text{}^{-3}$. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10$\text{}^{-3}$ Ω cm$\text{}^{2}$. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 672-674
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors
    Autorzy:
    Łukasiewicz, M.
    Wójcik-Głodowska, A.
    Guziewicz, E.
    Jakieła, R.
    Krajewski, T.
    Łusakowska, E.
    Paszkowicz, W.
    Minikayev, R.
    Kiecana, M.
    Sawicki, M.
    Godlewski, M.
    Wachnicki, Ł.
    Szczepanik, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811957.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature ($T_s$=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1235-1240
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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