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Tytuł:
Rare-Earth Excitation Mechanism in Wide Band Gap H-VI Compounds
Autorzy:
Karpińska, K.
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929798.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.55.Et
Opis:
The excitation mechanism of rare-earth emission in Eu and Ce doped CaS and SrS is studied. It is proposed that the Eu and probably also Ce emission is induced by the photoionization transition of the rare-earth ion, which is followed by the carrier trapping via the excited state of the ion. At increased temperatures the efficiency of excitation is reduced. We explain this effect by the carrier emission from the excited core state of the rare-earth ion to the continuum of the conduction (valence) band states. It is also suggested that the charge transfer state of the rare-earth ion may act as the intermediate state in the carrier trapping.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 959-962
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic, Structural, and Optical Properties of Low Temperature ZnMnO Grown by Atomic Layer Epitaxy
Autorzy:
Wójcik, A.
Kiecana, M.
Kopalko, K.
Godlewski, M.
Guziewicz, E.
Yatsunenko, S.
Łusakowska, E.
Minikayev, R.
Paszkowicz, W.
Świątek, K.
Wilamowski, Z.
Sawicki, M.
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/2044552.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Jk
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
Magnetic, structural, and optical properties of ZnMnO films grown with atomic layer epitaxy are discussed. Atomic layer epitaxy films were grown at low temperature using organic zinc and manganese precursors. From magnetometry and electron spin resonance investigations we conclude that lowering of a growth temperature significantly limits formation of Mn precipitates and inclusions of different foreign phases of manganese oxides to ZnMnO host.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 915-921
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot Carrier Effects in Optically Detected Cyclotron Resonance Studies of III-V Semiconductors
Autorzy:
Karpińska, K.
Dedulewicz, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920978.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
72.70.+m
76.90.+d
Opis:
The mechanisms of irregular photoluminescence intensity oscillations, as observed in optically detected cyclotron resonance experiments, are discussed. Two possible scenarios are analyzed, both requiring impact ionization of the center(s) by electric field accelerated free carriers. The first assumes coexistence of dielectric and energy relaxation processes. The second assumes a subsequent impact ionization of two different centers.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 623-626
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of ZnO Nanoparticles
Autorzy:
Tomaszewska-Grzęda, A.
Łojkowski, W.
Godlewski, M.
Yatsunenko, S.
Drozdowicz-Tomsia, K.
Goldys, E. M.
Phillips, M. R.
Powiązania:
https://bibliotekanauki.pl/articles/2044547.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Wx
68.37.Hk
78.55.Et
78.47.+p
Opis:
In this work we evaluate structural and optical properties of ZnO nanoparticles grown by wet chemistry method. Light emission properties of these nanoparticles are studied with cathodoluminescence and micro-photoluminescence. Even at the room temperature excitonic emission is well resolved, due to high exciton binding energy of ZnO. Decay kinetics of photoluminescence emissions and efficiency of inter-nanoparticles energy migration is evaluated from maps of in-plane variations of photoluminescence decay times measured in microphotoluminescence setup.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 897-902
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact Ionization Driven Chaotic Photoluminescence Oscillations in Ga$\text{}_{0.47}$In$\text{}_{0.53}$As
Autorzy:
Godlewski, M.
Fronc, K.
Gajewska, M.
Chen, W.M.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1888119.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
72.70.+m
76.90.+d
Opis:
A new application of the Optically Detected Cyclotron Resonance (ODCR) is presented. We report impact ionization studies of bound exciton: (BE) and shallow donor related recombination processes in Ga$\text{}_{0.47}$In$\text{}_{0.53}$As. An appearance of chaotic oscillations in photoluminescence (PL) intensity is observed under condition of impact ionization of deeper donors.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 271-274
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tuning of Color Chromaticity of Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy
Autorzy:
Skrobot, M.
Godlewski, M.
Guziewicz, E.
Kopalko, K.
Phillips, M. R.
Powiązania:
https://bibliotekanauki.pl/articles/2047005.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.79.-e
78.66.-w
81.05.-t
Opis:
Monocrystalline films of sphalerite-type ZnSe were grown on GaAs(100) substrates from elemental Zn and Se precursors by atomic layer epitaxy in a gas flow system. Due to color mixing of band edge and deep defect-related emissions these layers emit intensive white light. Depth profiling cathodoluminescence indicates that green and red emissions mostly come from disordered regions of the films, close to the ZnSe/GaAs interface. We tested a possibility of tuning of chromaticity coordinates and of color temperature of the emission. We found that the chromaticity parameters (color perception) can be tuned by either regulating the appropriate accelerating voltage of electrons or current density of primary electrons in cathodoluminescence investigations. These properties of ZnSe films make them suitable for some practical applications as white light sources.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 359-367
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recombination Processes in ZnSe:Eu
Autorzy:
Świątek, K.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1890962.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.50.Ge
Opis:
The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu$\text{}^{2+}$ ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 381-384
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures
Autorzy:
Karpińska, K.
Godlewski, M.
Żytkiewicz, Z. R.
Chen, W. M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1921617.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
76.70.Hb
78.55.Cr
Opis:
The results of photoluminescence and optically detected cyclotron resonance experiments are presented for thick AlGaAs epilayers grown by liquid phase electroepitaxy method on GaAs:Cr substrate. These results indicate an efficient energy transfer from excited AlGaAs to GaAs.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 713-716
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi-Edge Singularity in Excitonic Spectra of Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:
Bugajski, M.
Regiński, K.
Godlewski, M.
Wesołowski, M.
Holtz, P. O.
Buyanov, A. V.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1950741.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
85.30.De
Opis:
The dynamic response of an electron Fermi sea to the presence of optically generated holes gives rise to an enhanced interaction of correlated electron-hole pairs near the Fermi level, resulting in an enhanced oscillator strength for optical transitions, referred to as the Fermi-edge singularity. We studied this effect in modulation-doped quantum wells which provide confined dense Fermi sea, spatially separated from dopant atoms, easily accessible for investigations under low excitation conditions. The Fermi-edge singularity was observed in both photoluminescence and photoluminescence excitation experiments, although in the case of photoluminescence the samples had to be either co-doped with acceptors in the wells to provide necessary localization of holes or designed to allow for nearly resonant scattering between the electronic states near the Fermi energy and the next unoccupied subband of the 2D electron gas.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 751-754
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Nature of Eu-Related Emissions in ZnS and CaS
Autorzy:
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879960.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
71.35.+z
78.55.Et
Opis:
The Eu-connected recombination processes in ZnS and CaS are analyzed on the basis of optical studies. A new Eu-related emission in ZnS is attributed to the recombination of an exciton bound at the Eu$\text{}^{2+}$ center, while in CaS the emission is dominated by the direct Eu$\text{}^{2+}$ intra-ion transition.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 255-257
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
(Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties
Autorzy:
Łukasiewicz, M.
Witkowski, B.
Wachnicki, Ł.
Kopalko, K.
Gierałtowska, S.
Wittlin, A.
Jaworski, M.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492571.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-034-A-036
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Light Emission in CdMnS Nanoparticles
Autorzy:
Godlewski, M.
Yatsunenko, S.
Drozdowicz-Tomsia, K.
Goldys, E. M.
Phillips, M. R.
Klar, P. J.
Heimbrodt, W.
Powiązania:
https://bibliotekanauki.pl/articles/2043717.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Wx
78.55.Et
78.47.+p
71.55.Gs
76.30.Fc
76.70.Hb
Opis:
We demonstrate coexistence of slow and fast components of photoluminescence decay of the Mn$\text{}^{2+}$ intra-shell emission in nanoparticles of CdMnS. We explain the observed decrease in PL lifetime of the Mn$\text{}^{2+}$ intra-shell transition by high efficiency of spin dependent magnetic interactions between localized spins of Mn$\text{}^{2+}$ ions and free carriers. This mechanism is enhanced in nanostructures, but it is also present in bulk samples.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 681-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhanced Exciton-Phonon Interaction in Strained ZnCdSe/ZnSe Quantum Well Structures
Autorzy:
Godlewski, M.
Leonardi, K.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1968093.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
76.70.Hb
Opis:
Radiative recombination processes in pseudomorphic ZnCdSe/ZnSe structures are compared to those observed in strain-relaxed structures grown on GaAs substrates with thick ZnSe buffer layers. From the temperature dependence of the photoluminescence line width we evaluate the strength of exciton-phonon interaction with acoustic (dominant at lower temperatures) and optical phonons. Stronger exciton-phonon interaction is observed for pseudomorphic structures. Such enhanced exciton-phonon interaction is likely responsible for a faster photoluminescence deactivation at increased temperatures. We also report different exciton properties (photoluminescence intensity, width, strength of exciton-phonon interaction) in quantum well of a given width but in structures grown with different order of quantum wells. More stable photoluminescence (with increasing temperature) is observed for a given quantum well if it is closer to the buffer layer and not to the cap layer.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 769-773
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure, Surface Morphology and Optical Properties of Thin Films of ZnS and CdS Grown by Atomic Layer Epitaxy
Autorzy:
Szczerbakow, A.
Godlewski, M.
Dynowska, E.
Ivanov, V. Yu.
Świątek, K.
Goldys, E. M.
Phillips, M. R.
Powiązania:
https://bibliotekanauki.pl/articles/1992336.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Jk
68.60.-p
81.15.Gh
Opis:
In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 579-582
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 50

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