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Wyszukujesz frazę "78.55.-m" wg kryterium: Wszystkie pola


Tytuł:
Influence of Annealing on Optical Properties of ZnO Nanorods Obtained by the Microwave-Assisted Hydrothermal Process
Autorzy:
Materska, P.
Witkowski, B.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1185899.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
61.46.-w
61.72.Cc
Opis:
Optical properties of ZnO nanorods (of different sizes, grown on two different substrates) are investigated. Nanorods were grown using microwave-assisted hydrothermal process on gallium nitride or silicon substrate. To initiate nanorods growth on a silicon substrate ZnO nucleation layer was used. ZnO nanoseeds were deposited by atomic layer deposition. For GaN substrate an epitaxial relation was observed. For both substrates nanorods show a hexagonal structure, expected for wurtzite ZnO. Results of nanorods annealing are discussed.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1202-1204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnO Films Grown at Low Temperature
Autorzy:
Przeździecka, E.
Krajewski, T.
Wójcik-Głodowska, A.
Yatsunenko, S.
Łusakowska, E.
Paszkowicz, W.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811975.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
81.10.-h
85.30.Fg
Opis:
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1303-1310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Transfer States of Transition Metal and Rare Earth Ions: Their Role in Recombination Processes
Autorzy:
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929777.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
78.55.Cr
78.55.Et
Opis:
Center ionization accompanied by carrier localization at the center by virtue of a short-range or a long-range Coulomb attractive potential is discussed. The role of charge transfer states in recombination processes is described. The source of carrier attractive potential is explained and a simple theoretical model is presented allowing to predict the nature (either electron or hole attractive) of this potential. The probability of different possible recombination paths is also analyzed.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 849-855
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroluminescence from Rare Earth Activated Materials - New Concepts
Autorzy:
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929609.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
71.55.Gs
78.50.Ge
Opis:
The recent progress in the field of thin film electroluminescence devices is reviewed. The mechanisms responsible for rare earth excitation in high electric field electroluminescence structures are explained. A new mechanism including rare earth ionization is described. Processes limiting electroluminescence efficiency are also discussed.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 435-444
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of ZnCoO Films and Nanopowders
Autorzy:
Wolska, E.
Łukasiewicz, M.
Fidelus, J.
Łojkowski, W.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791349.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
78.55.Et
81.07.Wx
61.72.uf
78.66.Hf
Opis:
ZnCoO is one of the most studied and promising semiconductor materials for spintronics applications. In this work we discuss optical and electrical properties of ZnCoO films and nanoparticles grown at low temperature by either atomic layer deposition or by a microwave driven hydrothermal method. We report that doping with cobalt quenches a visible photoluminescence of ZnO. We could observe a visible photoluminescence of ZnO only for samples with very low Co fractions (up to 1%). Mechanisms of photoluminescence quenching in ZnCoO are discussed. We also found that ZnO films remained n-type conductive after doping with Co, indicating that a high electron concentration and cobalt 2+ charge state can coexist.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 918-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Light Emission in CdMnS Nanoparticles
Autorzy:
Godlewski, M.
Yatsunenko, S.
Drozdowicz-Tomsia, K.
Goldys, E. M.
Phillips, M. R.
Klar, P. J.
Heimbrodt, W.
Powiązania:
https://bibliotekanauki.pl/articles/2043717.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Wx
78.55.Et
78.47.+p
71.55.Gs
76.30.Fc
76.70.Hb
Opis:
We demonstrate coexistence of slow and fast components of photoluminescence decay of the Mn$\text{}^{2+}$ intra-shell emission in nanoparticles of CdMnS. We explain the observed decrease in PL lifetime of the Mn$\text{}^{2+}$ intra-shell transition by high efficiency of spin dependent magnetic interactions between localized spins of Mn$\text{}^{2+}$ ions and free carriers. This mechanism is enhanced in nanostructures, but it is also present in bulk samples.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 681-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photo-ESR Studies of Ni doped ZnS and ZnSe
Autorzy:
Surma, M.
Zakrzewski, A. J.
Godlewski, M.
Surkova, T. P.
Powiązania:
https://bibliotekanauki.pl/articles/1932084.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.He
78.55.Et
Opis:
The results of electron spin resonance experiments are presented for nickel doped ZnS and ZnSe. Energy level position of Ni$\text{}^{1+}$ state in band gap of ZnS and ZnSe is determined. The nonradiative recombination processes of donor-acceptor pairs in Ni doped samples are discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 221-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nature of Blue Anti-Stokes Luminescence in ZnSe:Cr
Autorzy:
Ivanov, V. Yu.
Semenov, Yu. G.
Surma, M.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933759.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Fc
71.55.Gs
78.55.Et
Opis:
The mechanism of the anti-Stokes photoluminescence in ZnSe:Cr is discussed. It is shown that the two-step ionization transitions of Cr(2$\text{}^{+}$ ↔ 1$\text{}^{+}$) result in appearance of the blue anti-Stokes photoluminescence of ZnSe:Cr. There are also some indications that the Auger type co-operative process can contribute to the photoluminescence excitation.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 743-746
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Nature of Eu-Related Emissions in ZnS and CaS
Autorzy:
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879960.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
71.35.+z
78.55.Et
Opis:
The Eu-connected recombination processes in ZnS and CaS are analyzed on the basis of optical studies. A new Eu-related emission in ZnS is attributed to the recombination of an exciton bound at the Eu$\text{}^{2+}$ center, while in CaS the emission is dominated by the direct Eu$\text{}^{2+}$ intra-ion transition.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 255-257
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rare-Earth Excitation Mechanism in Wide Band Gap H-VI Compounds
Autorzy:
Karpińska, K.
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929798.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.55.Et
Opis:
The excitation mechanism of rare-earth emission in Eu and Ce doped CaS and SrS is studied. It is proposed that the Eu and probably also Ce emission is induced by the photoionization transition of the rare-earth ion, which is followed by the carrier trapping via the excited state of the ion. At increased temperatures the efficiency of excitation is reduced. We explain this effect by the carrier emission from the excited core state of the rare-earth ion to the continuum of the conduction (valence) band states. It is also suggested that the charge transfer state of the rare-earth ion may act as the intermediate state in the carrier trapping.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 959-962
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Efficient Two-Center Auger Mechanism of Electron Trapping by Fe$\text{}^{3+}$ Ions in ZnSe:Fe,Cr
Autorzy:
Surma, M.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968433.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.He
71.55.Gs
78.55.Et
Opis:
A detailed analysis of decay kinetics of light induced electron spin resonance signals of Cr$\text{}^{1+}$ and Fe$\text{}^{3+}$ ions in ZnSe:Fe,Cr is given. We observe that the Cr$\text{}^{1+}$ electron spin resonance signal decays once free electrons are thermally ionized from shallow donors of ZnSe. Such unusual behavior of the Cr$\text{}^{1+}$ electron spin resonance signal is explained by efficient two-center Auger recombination: the Cr$\text{}^{1+}$ center is ionized due to the Auger-type energy transfer from the electron being trapped by the Fe$\text{}^{3+}$ ion. Such process is shown to be consistent with the temperature dependence of the decay times of electron spin resonance signals. Its quantum efficiency is estimated to be as large as 18% for Cr and Fe concentrations which were studied.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1017-1020
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recombination Processes in ZnSe:Eu
Autorzy:
Świątek, K.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1890962.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.50.Ge
Opis:
The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu$\text{}^{2+}$ ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 381-384
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of ZnO Nanoparticles
Autorzy:
Tomaszewska-Grzęda, A.
Łojkowski, W.
Godlewski, M.
Yatsunenko, S.
Drozdowicz-Tomsia, K.
Goldys, E. M.
Phillips, M. R.
Powiązania:
https://bibliotekanauki.pl/articles/2044547.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Wx
68.37.Hk
78.55.Et
78.47.+p
Opis:
In this work we evaluate structural and optical properties of ZnO nanoparticles grown by wet chemistry method. Light emission properties of these nanoparticles are studied with cathodoluminescence and micro-photoluminescence. Even at the room temperature excitonic emission is well resolved, due to high exciton binding energy of ZnO. Decay kinetics of photoluminescence emissions and efficiency of inter-nanoparticles energy migration is evaluated from maps of in-plane variations of photoluminescence decay times measured in microphotoluminescence setup.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 897-902
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Molecular Beam Epitaxy Grown ZnSe on GaAs
Autorzy:
Karpińska, K.
Suchocki, A.
Godlewski, M.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1929648.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Bd
68.55.Ln
78.66.Fd
Opis:
Photoluminescence studies of molecular beam epitaxy grown ZnSe-on-GaAs layers are presented. The high sensitivity of the PL technique allowed for identification unintentional dopants in pure ZnSe sample. Characteristic photoluminescence lines due to extended defects were observed. The experimental results obtained show a correlation between intentional doping level and extended defects concentration. We conclude also that even though molecular beam epitaxy layers are grown at low temperature, the self-compensation mechanism may still be important. For heavily doped sample edge emission is deactivated likely due to efficient energy transfer link with deep donor-acceptor pair bands.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 551-554
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Magnetic Field on Blue Anti-Stokes Luminescence of ZnSe:Cr Crystals
Autorzy:
Ivanov, V. Yu.
Semenov, Yu.G.
Surma, M.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1950807.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.55.Et
76.30.Fc
Opis:
The results of photoluminescence and magneto-luminescence studies of chromium doped ZnSe crystals are presented for blue colour shallow donor-shallow acceptor pair photoluminescence, with a zero phonon line at 2.692 eV. This donor-acceptor pair photoluminescence is observed under photo-excitation with photon energies smaller than the emission energy (anti-Stokes luminescence) and dominates in the photoluminescence spectrum of ZnSe:Cr at the excitation energy about 2.41 eV and for temperature T<20 K. A quantum efficiency of this anti-Stokes luminescence is relatively large. It is of about 10$\text{}^{-3}$ at 0 T and increases with increasing magnetic field up to 7 T at temperature T=2 K. We relate the intensity of the anti-Stokes luminescence to a non-equilibrium concentration of photo-excited Cr$\text{}^{+}$ ions and propose that the rate of spin-dependent recombination of Cr$\text{}^{+}$ ions with free holes (decreases with increasing magnetic field) is responsible for the observed increase in the anti-Stokes luminescence intensity at higher magnetic fields.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 821-824
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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