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    Wyświetlanie 1-7 z 7
    Tytuł:
    The Features of Real Part of Admittance in the Nanocomposites $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ Manufactured by the Ion-Beam Sputtering Technique with Ar Ions
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Fedotova, V.
    Saad, A.
    Larkin, A.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503798.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.Rf
    73.22.-f
    84.37.+q
    72.20.Ee
    Opis:
    The temperature and frequency dependences of the admittance real part σ (T, f) in granular $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ nanocomposite films around the percolation threshold $x_{C}$ were investigated. The behaviour of σ (T, f) vs. the temperature and frequency over the ranges 77-300 K and 50 Hz-1 MHz, respectively, displays the predominance of an activation (hopping) conductance mechanism for the samples below the percolation threshold $x_{C}$ and of a metallic one beyond the $x_{C}$ determined as 54 ± 2 at.%. The mean hopping range d for the nanoparticles diameter D was estimated at different metallic phase content x.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 35-38
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hopping Conductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ Manufactured by Ion-Beam Sputtering of Complex Target in $Ar+O_2$ Ambient Gas
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Fedotova, V.
    Saad, A.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503812.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.Rf
    73.22.-f
    84.37.+q
    72.20.Ee
    Opis:
    We report the investigation of a real part of the admittance σ of granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ with 0.30 < x < 0.70 in the dielectric (hopping) regime. An analysis of the σ(T, f, x) dependences in the as-deposited and annealed films over the temperature 77 K < T < 300 K and frequency 50 < f < $10^6$ Hz ranges displayed the predominance of an activation (hopping) conductance mechanism with dσ/ dT > 0 for the samples below the percolation threshold $x_{C}$ ≈ 0.76 ± 0.05. Based on the earlier models for hopping AC conductance, computer simulation of the frequency coefficient $α_{f}$ of hopping conductance depending on the probability of jump p, frequency f, and also on the shape of σ(f) curve was performed. The experimental and simulation results revealed a good agreement.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 39-42
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mechanisms of Carrier Transport in $Cu_x(SiO_2)_{1-x}$ Nanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions
    Autorzy:
    Fedotov, A.
    Mazanik, A.
    Svito, I.
    Saad, A.
    Fedotova, V.
    Czarnacka, K.
    Koltunowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402220.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.37.+q
    72.80.Ga
    73.22.-f
    61.46.Df
    64.60.ah
    Opis:
    The present paper investigates the temperature/frequency dependences of admittance Z in the granular $Cu_x(SiO_2)_{1-x}$ nanocomposite films around the percolation threshold $x_{C}$ in the temperature range of 4-300 K and frequencies of 20-10⁶ Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold $x_{C}$ ≈ 0.59 and nearly metallic behaviour beyond the $x_{C}$. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < $x_{C}$ exhibited behavior close to ReZ(f) ≈ $f^{-s}$ with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > $x_{C}$), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 883-886
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Crystal Structure in Dielectric $BaAl_2Si_2O_8$-Based Materials Depending on Preparation Conditions
    Autorzy:
    Bliznyuk, L.
    Klimza, A.
    Petrochenko, T.
    Fedotova, V.
    Karwat, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1366306.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Je
    Opis:
    Crystal structure formation of $BaAl_2Si_2O_8$ known as polymorphic compound is investigated in present work depending on conditions of preparation. Characteristics of ceramics have been studied for different modifications of crystal structure. Additional technologic operations (grinding with following heat treatment) have been found to result in polymorphic transformation. Dielectric properties of $BaAl_2Si_2O_8$ ceramics have been studied for hexagonal, monoclinic crystal structure modifications as well as for that based on phase mixture. It has been shown that the sintering of ceramic material based on the monoclinic crystal structure modification of $BaAl_2Si_2O_8$ takes place in temperature diapason of 1300-1350°C. Sintering of material with the hexagonal crystal structure modification occurs in temperature diapason of 1450-1500°C. Ceramics materials based on compound $BaAl_2Si_2O_8$ are found to have low porosity, high Q-factor and dielectric characteristics, allowing use of these ceramic materials for production of resonators and other microwave equipments.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1348-1350
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetoresistance in n-Si/$SiO_2$/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology
    Autorzy:
    Fedotova, J.
    Ivanou, D.
    Ivanova, Y.
    Fedotov, A.
    Mazanik, A.
    Svito, I.
    Streltsov, E.
    Saad, A.
    Tyutyunnikov, S.
    Kołtunowicz, T.
    Demyanov, S.
    Fedotova, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504014.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    81.05.Rm
    73.22.-f
    73.50.Jt
    Opis:
    A study of magnetotransport in the n-Si/$SiO_2$/Ni nanostructures with granular Ni nanorods in $SiO_2$ pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/$SiO_2$/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 133-135
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermoelectric Properties of $Ca_3Co_4O_9$-Based Ceramics Doped with Fe and/or Y
    Autorzy:
    Fedotov, A.
    Mazanik, A.
    Svito, I.
    Saad, A.
    Troyanchuk, I.
    Bushinski, M.
    Fedotova, V.
    Zukowski, P.
    Koltunowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1366301.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    46.25.Hf
    62.20.D-
    82.45.Xy
    Opis:
    We describe here structure and temperature dependences of conductivity σ(T), the Seebeck coefficient α(T), thermal conductivity λ(T) and figure-of-merit ZT(T) in $Ca_3Co_4O_9$ ceramics, doped with Fe and Y, depending on compacting pressure (0.2 or 6 MPa) and temperature (300 < T < 700 K). It is shown that introduction of iron and yttrium to ceramics does not alter the crystalline structure of the material. Increasing the pressure in the compacting process before the additional diffusion annealing leads to a smaller-grained structure and increase σ and λ due to reducing of the synthesized samples porosity. The Seebeck coefficients of nanocomposite ceramics $Ca_3Co_{3.9}Fe_{0.1}O_9$ and $(Ca_{2.9}Y_{0.1})(Co_{3.9}Fe_{0.1})O_9$ have linear dependences on temperature is not changed after increase of compacting pressure. Electrical-to-heat conductivity ratio (σ/λ) for the samples compacted at high (6 GPa) pressure increases not more than 20-30% in comparison with ones compacted at low (0.2 GPa) pressure, whereby ZT is increased more than 50%. The main reason for this effect is samples porosity reduction with the compacting pressure increase.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1344-1347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification
    Autorzy:
    Fedotov, A.
    Skuratov, V.
    Yurasov, D.
    Novikov, A.
    Svito, I.
    Apel, P.
    Zukowski, P.
    Fedotova, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030140.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    73.20.Fz
    73.40.-c
    61.80.Jh
    Opis:
    In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient R_H(T,B) in the temperature range of 2K < T < 300K and B ≤ 8T before and after the 167 MeV Xe⁺²⁶ ion irradiation (ion fluence of 10⁸ cm¯²) were measured. At the temperatures below 50K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L_{Th}(T) ≈ A × T^{p} (where p and A are dependent on the scattering mechanism) indicated their ≈ 25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 229-232
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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