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    Wyświetlanie 1-15 z 15
    Tytuł:
    Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures
    Autorzy:
    Ochalski, T. J.
    Żuk, J.
    Regiński, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992051.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.20.-e
    Opis:
    We report on photoreflectance investigations of strained-layer In$\text{}_{0.2}$Ga$\text{}_{0.8}$As/GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In$\text{}_{0.2}$Ga$\text{}_{0.8}$As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 463-467
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Monte Carlo Studies of Quantum Cascade Lasers
    Autorzy:
    Borowik, P.
    Thobel, J.
    Bugajski, M.
    Adamowicz, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807675.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.10.-d
    72.20.Jv
    73.63.-b
    78.67.-n
    Opis:
    Results of multi particle Monte Carlo studies of a mid-infrared QCL structure, for the first time fabricated by Page et al., are presented. It has been demonstrated that for the considered structure design at least 9 electron energy levels per laser segment should be used to correctly describe the electric current properties. Mechanisms responsible for electron population on higher laser level are discussed.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-49-S-51
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Resistivity AlGaAs Grown by Low Temperature MBE
    Autorzy:
    Radomska, D.
    Ratajczak, J.
    Regiński, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992076.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    Opis:
    Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As layers were grown by molecular beam epitaxy using substrate temperature 200-300°C, tetrameric As and two values of As/Ga+Al flux ratio i.e. 3 or 8. The post-growth annealing was performed in situ at 600°C for 20 min under As-overpressure. The samples were characterised by reflection high-energy electron diffraction, transmission electron microscope and room-temperature I-V measurements of n$\text{}^{+}$/LT grown layer /n$\text{}^{+}$ resistors. The resistivity and trap-filled limited voltage have been determined. The best layers exhibited ρ of the order of 10$\text{}^{9}$ Ω cm, were monocrystalline, uniformly precipitated and without dislocations.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 492-496
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Visible Light Emission from Porous Silicon
    Autorzy:
    Bugajski, M.
    Wesołowski, M.
    Lewandowski, W.
    Ornoch, J.
    Kątcki, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924257.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.65.-s
    Opis:
    The aim of this paper is the study of porous Si prepared by preferential anodic dissolution in concentrated HF acid solutions. Porous silicon layers exhibited extremely efficient luminescence in the 700-900 nm range at room temperature. Basic characteristics of this luminescence strongly suggest the intrinsic origin of the process, directly related to quantum confinement. The additional transmission-electron-microscopy and electron-diffraction studies - were performed to support hypothesis that luminescence originates from silicon nanostructures.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 914-918
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Cavity Enhanced Photonic Devices
    Autorzy:
    Bugajski, M.
    Muszalski, J.
    Ochalski, T.
    Kątcki, J.
    Mroziewicz, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030303.pdf
    Data publikacji:
    2002-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.66.Fd
    78.55.-m
    78.67.De
    78.45.+h
    78.47.+p
    Opis:
    In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In$\text{}_{x}$Ga$\text{}_{1-x}$As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 1; 105-118
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
    Autorzy:
    Wójcik-Jedlińska, A.
    Muszalski, J.
    Bugajski, M.
    Łukowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812025.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.35.Be
    78.67.De
    42.55.Sa
    42.55.Xi
    Opis:
    In this paper we demonstrate how the tuning of the VECSEL heterostructure can be precisely determined. Since the VECSEL active region is embodied in a microcavity, the photoluminescence signal collected from the chip surface is modified by the resonance of this cavity. The angle resolved photoluminescence measurements combined with the temperature tuning of the structure allowed us to precisely determine VECSEL emission features. The investigated structure consists of GaAs cavity with six InGaAs quantum wells and is designed for lasing at 980 nm.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1437-1443
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of Free-Space Optics Development
    Autorzy:
    Mikołajczyk, J.
    Bielecki, Z.
    Bugajski, M.
    Piotrowski, J.
    Wojtas, J.
    Gawron, W.
    Szabra, D.
    Prokopiuk, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/221245.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    optical communications
    open path laser communications
    line of sight communications
    free space optics
    Opis:
    The article presents state of work in technology of free-space optical communications (Free Space Optics - FSO). Both commercially available optical data links and their further development are described. The main elements and operation limiting factors of FSO systems have been identified. Additionally, analyses of FSO/RF hybrid systems application are included. The main aspects of LasBITer project related to such hybrid technology for security and defence applications are presented.
    Źródło:
    Metrology and Measurement Systems; 2017, 24, 4; 653-674
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Identification of Residual Impurities in Si-Doped MBE Grown GaAs
    Autorzy:
    Kaniewska, M.
    Regiński, K.
    Kaniewski, J.
    Muszalski, J.
    Ornoch, L.
    Adamczewska, J.
    Marczewski, J.
    Bugajski, M.
    Mizera, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933820.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    73.40.Νs
    73.20.Hb
    Opis:
    The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 775-778
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE
    Autorzy:
    Kaniewska, M.
    Regiński, K.
    Muszalski, J.
    Kryńska, D.
    Litkowiec, A.
    Kaniewski, J.
    Wesołowski, M.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1951031.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.De
    85.60.Jb
    73.20.Dx
    Opis:
    Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 847-850
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Molecular Beam Epitaxy Growth for Quantum Cascade Lasers
    Autorzy:
    Kosiel, K.
    Szerling, A.
    Kubacka-Traczyk, J.
    Karbownik, P.
    Pruszyńska-Karbownik, E.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791281.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    81.15.Hi
    85.60.-q
    85.35.Be
    73.63.-b
    63.22.-m
    72.80.Ey
    73.61.Ey
    78.66.Fd
    Opis:
    The fabrication of quantum cascade lasers emitting at 9 μm is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W and the slope efficiency η ≈ 0.5-0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/$Al_{0.45}Ga_{0.55}As$ heterostructure, with the "anticrossed-diagonal" design. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and $Si_{3}N_{4}$ for electrical insulation. The quantum cascade laser structures have been grown by molecular beam epitaxy, with Riber Compact 21 T reactor. The stringent requirements - placed particularly on the epitaxial technology - and the influence of technological conditions on the device structure properties were presented and discussed in depth.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 806-813
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Holz, P. O.
    Bergman, J. P.
    Monemar, B.
    Regiński, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952469.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.47.+p
    73.20.Jc
    Opis:
    The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps$\text{}^{-1}$. Such inter-island migration processes have been observed till now only in growth interrupted structures.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1007-1011
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells
    Autorzy:
    Bugajski, M.
    Godlewski, M.
    Regiński, K.
    Holtz, P. O.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969046.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    73.20.Dx
    Opis:
    We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 265-270
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs
    Autorzy:
    Godlewski, M.
    Bergman, J. P.
    Holtz, P. O.
    Monemar, B.
    Bugajski, M.
    Regiński, K.
    Kaniewska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933743.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.20.Fz
    71.35.+z
    Opis:
    Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown without growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth interrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized excitons are observed in that case.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 719-722
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology
    Autorzy:
    Szerling, A.
    Karbownik, P.
    Kosiel, K.
    Kubacka-Traczyk, J.
    Pruszyńska-Karbownik, E.
    Płuska, M.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807678.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.60.-q
    85.35.Be
    72.80.Ey
    73.61.Ey
    78.66.Fd
    Opis:
    The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/$Al_{0.45}Ga_{0.55}As$ laser without anti-reflection/high-reflection coatings.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-45-S-47
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaAs/AlGaAs (~9.4 žm) quantum cascade lasers operating at 260 K
    Autorzy:
    Bugajski, M.
    Kosiel, K.
    Szerling, A.
    Kubacka-Traczyk, J.
    Sankowska, I.
    Karbownik, P.
    Trajnerowicz, A.
    Pruszy, E.
    Pierciński, K.
    Pierścińska, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/200656.pdf
    Data publikacji:
    2010
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    quantum cascade lasers
    pulsed mode
    Opis:
    The fabrication of Quantum Cascade Lasers (QCLs) emitting at 9.4 um is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded in 77 K were over 1 W, and the slope efficiency 0.5–0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/Al0.45Ga0.55As heterostructure, with 3QW anticrossed-diagonal design originally proposed by Page et al. [1]. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si3N4 for electrical insulation. The QCL structures have been grown by Molecular Beam Epitaxy (MBE), with Riber Compact 21T reactor. The stringent requirements – placed particularly on the epitaxial technology – and the influence of technological conditions on the device structure properties are presented and discussed in depth.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2010, 58, 4; 471-476
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-15 z 15

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