Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Bożek, K." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-10 z 10
    Tytuł:
    Photoreflectance Measurements of InGaAs/GaAs Quantum Wells
    Autorzy:
    Tomaszewicz, T.
    Korona, K. P.
    Bożek, R.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952324.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Bd
    73.20.Dx
    78.66.Fd
    Opis:
    Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 965-968
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Single GaN/AlGaN Quantum Dot Spectroscopy
    Autorzy:
    Surowiecka, K.
    Wysmołek, A.
    Stępniewski, R.
    Bożek, R.
    Pakuła, K.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047382.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The detailed analysis of the emission from these structures enables the observation of pairs of lines separated by the energy up to 3 meV. They behave in a different way under different excitation power that suggests that this doublet structure can be associated with the exciton and trion (or biexciton recombination). It is observed that for different quantum dots the energy of the charged exciton complex emission could be higher or lower than the neutral exciton one. It is discussed in terms of a competition between attractive e-h and repulsive e-e (h-h) Coulomb interaction that occurs because of the existence of the built-in electric field that separates electrons and holes in the dot.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 233-236
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temporal Evolution of Multi-Carrier Complexes in Single GaN/AlGaN Quantum Dots
    Autorzy:
    Surowiecka, K.
    Wysmołek, A.
    Stępniewski, R.
    Bożek, R.
    Pakuła, K.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044542.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 879-884
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Tuning of Spectral Sensitivity of AlGaN/GaN UV Detector
    Autorzy:
    Korona, K. P.
    Drabińska, A.
    Trajnerowicz, A.
    Bożek, R.
    Pakuła, K.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036867.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Kp
    73.50.Pz
    78.40.Fy
    Opis:
    GaN/AlGaN photodetector that exhibits new interesting property is presented. Its spectral sensitivity depends upon bias voltage. Under positive or low negative bias the detector is sensitive mainly to the ultrafiolet radiation absorbed by AlGaN layer 3.7-3.8 eV. Under negative bias U$\text{}_{B}$ below -4 V, the detector is sensitive mainly to the radiation absorbed by GaN (3.4-3.6 eV). The effect can be explained based on numerical calculations of the electric field and potential profiles of this structure. The damping of GaN signal is attributed to activity of 2D electron gas formed on the GaN/AlGaN interface by spontaneous polarization. The reappearing of the signal is attributed to tunneling of holes through AlGaN, stimulated by a high electric field.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 675-681
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Potential and Carrier Distribution in AlGaN Superlattice
    Autorzy:
    Korona, K. P.
    Pakuła, K.
    Bożek, R.
    Drabińska, A.
    Surowiecka, K.
    Stępniewski, R.
    Zielińska-Rohozińska, E.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043725.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    73.61.Ey
    73.21.Cd
    Opis:
    Photocurrent spectroscopy and Kelvin force microscopy have been used in order to determine charge, field, and potential distributions in spontaneously grown superlattice. The spectra show that light can generate currents and potentials in both directions depending on photon energy. A numerical model made for superlattice of periodλ$\text{}_{SL}$ = 33 nm shows that electric field in superlattice oscillates coherently with Al content. The oscillations of electric field explain the different directions of photocurrent. The electric field can also separate electrons and holes, making carrier lifetimes longer and lowering excitation intensity threshold for occupation inversion.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 723-729
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Electrical Measurements of Low-Temperature InAlAs
    Autorzy:
    Korona, K. P.
    Wysmołek, A.
    Bożek, R.
    Kamińska, M.
    Baranowski, J. M.
    Weber, E. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923833.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    73.60.Br
    78.55.Cr
    Opis:
    Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 825-828
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Studies of Defects in Graphene Grown on SiC
    Autorzy:
    Grodecki, K.
    Bożek, R.
    Borysiuk, J.
    Strupinski, W.
    Wysmolek, A.
    Stępniewski, R.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047919.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.48.Gh
    78.30.Fs
    Opis:
    The Raman scattering studies of multi-layer graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) substrates are presented. Intensity ratio of the D and G bands was used to estimate the average size of the graphene flakes constituting carbon structures. The obtained estimates were compared with flake sizes from atomic force microscopy data. We found that even the smallest structures observed by atomic force microscopy images are much bigger than the estimates obtained from the Raman scattering data. The obtained results are discussed in terms of different average flake sizes inside and on the surface of the multi-layer graphene structure, as well as different type of defects which would be present in the investigated structures apart from edge defects.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 595-596
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
    Autorzy:
    Bożek, R.
    Babiński, A.
    Baranowski, J. M.
    Stępniewski, R.
    Klusek, Z.
    Olejniczak, W.
    Starowieyski, K.
    Wróbel, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934054.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    68.55.-a
    Opis:
    We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 974-976
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Stępniewski, R.
    Pakuła, K.
    Kossacki, P.
    Golnik, A.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038084.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    78.67.Hc
    75.75.+a
    68.65.Hb
    Opis:
    We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 517-521
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Korona, K. P.
    Stępniewski, R.
    Knap, W.
    Pakuła, K.
    Baranowski, J. M.
    Grandjean, N.
    Massies, J.
    Prystawko, P.
    Grzegory, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036024.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.20.-r
    73.21.-b
    74.40.+k
    Opis:
    Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 573-578
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies