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Wyświetlanie 1-15 z 16
Tytuł:
Superconductivity in Indium Diffused GaAs
Autorzy:
Baranowski, J. M.
Wójcik, P.
Palczewska, M.
Jabłoński, R.
Weber, E. R.
Yau, W. P.
Sohn, H.
Werner, P.
Powiązania:
https://bibliotekanauki.pl/articles/1921582.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Mq
76.20.+q
Opis:
Superconductivity of indium diffused GaAs was investigated. The superconductivity in these samples was identified by the magnetic susceptibility and the characteristic field modulated microwave absorption. The static magnetic susceptibility was measured from 40 K down to 2.5 K. The result shows two distinctive diamagnetic contributions within 7 K-2.5 K range. These diamagnetic contributions were correlated with the excess of In and Ga metal in GaAs.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 670-673
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers
Autorzy:
Korona, K. P.
Baranowski, J. M.
Pakuła, K.
Monemar, B.
Bergman, J. P.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1968240.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
78.47.+p
78.55.Cr
Opis:
Photoluminescence of excitons and their phonon replicas in homoepitaxial MOCVD-grown gallium nitride (GaN) layers have been studied by picosecond (ps) time-resolved photoluminescence spectroscopy. The time-resolved photoluminescence spectroscopy has shown that the free excitons and their replicas have the fastest dynamics (decay time of about 100 ps). Then, the excitons-bound-to-donors emission rises (with the rise time similar to the free excitons decay time) and decays with t=300 ps. The excitons-bound-to-acceptors has the slowest decay (about 500 ps). It has been found that the ratio of excitons-bound-to-acceptors and excitons-bound-to-donors amplitudes and their decay times are different for 1-LO replicas and then for zero-phonon lines, whereas the ratio of amplitudes and the decay time of the 2-LO replicas are similar to the ones of the zero-phonon lines.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 841-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Function Theory Calculations of Polaritons in GaN
Autorzy:
Korona, K. P.
Stępniewski, R. Stępniewski
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968249.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.36.+c
Opis:
Properties of polaritons (free excitons coupled with photons of similar energy) in gallium nitride are investigated by performing calculations based on dielectric function theory including all three excitons A, B and C (characteristic for the wurtzite structure). Moreover the excited states of excitons have been taken into account by adding Elliott's components to dielectric function. Energies, polarizabilities and damping constants of excitons are determined. It is shown that due to inter-exciton interactions the B and C excitons are strongly damped. It is estimated that the characteristic time of B to A relaxation is t$\text{}_{BA}$=1 ps. The exciton C lifetime is estimated τ$\text{}_{C}$=0.2 ps.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 867-870
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Model of Hopping between Deep Centers in Low Temperature GaAs
Autorzy:
Korona, K. P.
Kamińska, M.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1872627.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.50.+t
72.80.Ey
Opis:
A model explaining hopping conductivity via EL2 deep centers in low temperature GaAs is presented. It is proposed that the wave function of the EL2 center consists of a localized part and of an external one. The model can describe such features as large wave function radius of hopping centers, changes of the conductivity during transition of EL2 to the metastable state and a high potential fluctuation amplitude.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 337-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiband GaN/AlGaN UV Photodetector
Autorzy:
Korona, K. P.
Drabińska, A.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2046918.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.61.Ey
73.40.Kp
Opis:
We present optical and electrical measurements made on GaN/AlGaN photodetector structure capable to detect three UV ranges, tuned by external voltage. The highest band at energy of about 3.85 eV is nearly independent of bias applied to the Schottky contact. Photosensitivity of the second band at about 3.65 eV changes strongly with the bias. Signal in this range increases about 20 times when the bias changes from 0 V to -4 V. Photosensitivity of the third band (3.4 eV) appears for strong reverse bias (-3 V). Characteristics of the detector are in qualitative agreement with numerical model, however deep centers present in the AlGaN layers cause quantitative discrepancies. The concentration of defects of the order of 10$\text{}^{16}$ cm$\text{}^{-3}$ was estimated from current transients.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 211-217
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Symmetry of the EL2 Defect in the Metastable State
Autorzy:
Trautman, P.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1920969.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.20.Hp
78.50.Ge
Opis:
We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during heating of the crystal. The recovery step, occurring at about 45 K in n-type GaAs, splits into two components under [111] stress, and no splitting is observed under [100] stress. The same behavior under uniaxial stress shows the recovery occurring at 125 K in semi-insulating GaAs. A fraction of centers recovering at lower temperature can be altered by excitation of metastability with polarized light or by excitation under stress. These results indicate that EL2 in the metastable state is trigonally distorted from the tetrahedral symmetry of the ground state.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 609-612
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance Measurements of InGaAs/GaAs Quantum Wells
Autorzy:
Tomaszewicz, T.
Korona, K. P.
Bożek, R.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952324.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Bd
73.20.Dx
78.66.Fd
Opis:
Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 965-968
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Induced Ordering of the EL2 Defects in the Metastable State
Autorzy:
Trautman, P.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1929711.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
78.20.Hp
Opis:
We tried to detect a strain in the crystal induced by the ordering of the EL2 defects in the metastable state by measuring linear dichroism and birefringence. We found that this strain is below the detection limit of our experiments and lower than that induced by 1 MPa of external stress. The observed dependence of orientation of the EL2 defects in the metastable state on the polarization of light used to transform EL2 to the metastable state is consistent with the attribution of the metastability of EL2 to the transformation of the isolated As$\text{}_{Ga}$ to the V$\text{}_{Ga}$A$\text{}_{Si}$ defect and is in conflict with the As$\text{}_{Ga}$-A$\text{}_{Si}$ defect pair model of EL2.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 677-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coupling of LO Phonons to Excitons in GaN
Autorzy:
Wysmołek, A.
Łomiak, P.
Baranowski, J. M.
Pakuła, K.
Stępniewski, R.
Korona, K. P.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1952430.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
63.20.Mt
71.55.Eq
Opis:
The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 981-984
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire
Autorzy:
Śliwiński, A. A.
Korona, K. P.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952204.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.61.Ey
Opis:
The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 955-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Measurements of Low-Temperature InAlAs
Autorzy:
Korona, K. P.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Baranowski, J. M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923833.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.60.Br
78.55.Cr
Opis:
Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 825-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tuning of Spectral Sensitivity of AlGaN/GaN UV Detector
Autorzy:
Korona, K. P.
Drabińska, A.
Trajnerowicz, A.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2036867.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Kp
73.50.Pz
78.40.Fy
Opis:
GaN/AlGaN photodetector that exhibits new interesting property is presented. Its spectral sensitivity depends upon bias voltage. Under positive or low negative bias the detector is sensitive mainly to the ultrafiolet radiation absorbed by AlGaN layer 3.7-3.8 eV. Under negative bias U$\text{}_{B}$ below -4 V, the detector is sensitive mainly to the radiation absorbed by GaN (3.4-3.6 eV). The effect can be explained based on numerical calculations of the electric field and potential profiles of this structure. The damping of GaN signal is attributed to activity of 2D electron gas formed on the GaN/AlGaN interface by spontaneous polarization. The reappearing of the signal is attributed to tunneling of holes through AlGaN, stimulated by a high electric field.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 675-681
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Korona, K. P.
Stępniewski, R.
Knap, W.
Pakuła, K.
Baranowski, J. M.
Grandjean, N.
Massies, J.
Prystawko, P.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2036024.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.20.-r
73.21.-b
74.40.+k
Opis:
Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 573-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Potential and Carrier Distribution in AlGaN Superlattice
Autorzy:
Korona, K. P.
Pakuła, K.
Bożek, R.
Drabińska, A.
Surowiecka, K.
Stępniewski, R.
Zielińska-Rohozińska, E.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2043725.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.61.Ey
73.21.Cd
Opis:
Photocurrent spectroscopy and Kelvin force microscopy have been used in order to determine charge, field, and potential distributions in spontaneously grown superlattice. The spectra show that light can generate currents and potentials in both directions depending on photon energy. A numerical model made for superlattice of periodλ$\text{}_{SL}$ = 33 nm shows that electric field in superlattice oscillates coherently with Al content. The oscillations of electric field explain the different directions of photocurrent. The electric field can also separate electrons and holes, making carrier lifetimes longer and lowering excitation intensity threshold for occupation inversion.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 723-729
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:
We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 16

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