Autor: Skorupa, W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy
Autorzy:: Anwand, W.
Schumann, Th.
Brauer, G.
Skorupa, W.
Xiong, S.
Wu, C.
Gebel, T.
Powiązania:: https://bibliotekanauki.pl/articles/1812451.pdf
Data publikacji:: 2008-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Ba
78.70.Bj
81.05.Ea
81.07.Bc
Opis:: Flash lamp annealing was applied to the modification of thin amorphous Si layers on $SiO_2$ and glass. Slow positron implantation spectroscopy was used for the characterisation of the microstructure before and after flash lamp annealing. Changes in the structure down to a depth of some micrometres below the surface observed with slow positron implantation spectroscopy will be presented and discussed.
Źródło:: Acta Physica Polonica A; 2008, 113, 5; 1273-1278
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
Autorzy:: Prucnal, S.
Turek, M.
Gao, K.
Zhou, S.
Pyszniak, K.
Droździel, A.
Żuk, J.
Skorupa, W.
Powiązania:: https://bibliotekanauki.pl/articles/1400484.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Fs
78.67.Hc
81.05.Ea
81.07.Ta
81.15.Lm
Opis:: Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 935-938
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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