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Wyszukujesz frazę "81.07.+b" wg kryterium: Temat


Wyświetlanie 1-5 z 5
Tytuł:
Type I CdSe and CdMgSe Quantum Wells
Autorzy:
Rudniewski, R.
Rousset, J.
Janik, E.
Kossacki, P.
Golnik, A.
Nawrocki, M.
Pacuski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1376087.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
81.05.Dz
81.07.-b
Opis:
In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/$Cd_{0.9}Mg_{0.1}Se$ and $Cd_{0.9}Mg_{0.1}Se$/$Cd_{0.85}Mg_{0.15}Se$ quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/$Cd_{0.9}Mg_{0.1}Se$ wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1167-1170
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnSe Nanolayers by Spectroscopic Ellipsometry
Autorzy:
Šćepanović, M.
Grujić-Brojčin, M.
Nesheva, D.
Levi, Z.
Bineva, I.
Popović, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1795712.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
81.15.-z
81.05.Dz
78.30.-j
07.60.Fs
68.55.-a
Opis:
Single layers of ZnSe with thicknesses of 30, 40, 50, 70 and 100 nm are deposited at room substrate temperature by thermal evaporation of ZnSe powder in vacuum. The layers surface morphology has been investigated by atomic force microscopy. Structural characterization by the Raman scattering measurement revealed the existence of randomly oriented crystalline ZnSe particles in all layers, and the presence of amorphous phase in layers thinner than 100 nm. The ellipsometric measurements were performed in the range from 1.5 to 5 eV at room temperature in air. To interpret the experimental results, the Bruggeman effective medium approximation of dielectric function of ZnSe layers has been used, representing the layers as different mixtures of crystalline ZnSe (c-ZnSe), amorphous ZnSe (a-ZnSe), and voids. The assumption of polycrystalline ZnSe layers modeled as mixture of porous c-ZnSe (with volume fraction of voids ≈ 0.17) and a-ZnSe gives the best fit of ellipsometric experimental data. Single layer thicknesses similar to those expected from preparation conditions have been obtained by this fitting procedure. It has been also found that decrease in the layer thickness causes an increase of the volume fraction of a-ZnSe. Thus, c-ZnSe/a-ZnSe ratio, porosity and layer thickness obtained by spectroscopic ellipsometry, provides useful information about crystallinity and micro-/nanostructure of ZnSe nanolayers.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 708-711
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
Autorzy:
Mazur, P.
Zuber, S.
Grodzicki, M.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1195467.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
68.37.Ps
68.37.Ef
68.37.-d
81.10.Bk
81.07.-b
Opis:
Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1131-1133
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Sb Layers on p-GaN: UPS, XPS and LEED Study
Autorzy:
Grodzicki, M.
Mazur, P.
Pers, J.
Zuber, S.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1376064.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
68.37.Ps
68.37.Ef
68.37.-d
81.10.Bk
81.07.-b
Opis:
The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1128-1130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
TEM Study of the Structural Properties of Nanowires Based on Cd, Zn, Te grown by MBE on Silicon Substrates
Autorzy:
Kaleta, A.
Kret, S.
Sanchez, A.
Bilska, M.
Kurowska, B.
Szczepańska, A.
Płachta, J.
Wojnar, P.
Wojciechowski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1032910.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.07.-b
61.46.-w
62.23.Hj
81.07.Gf
61.46.Km
78.67.Uh
07.10.Pz
68.35.Gy
68.37.Lp
68.37.Og
68.37.Ma
Opis:
In this work we report on the atomic structures, elemental distribution, defects and dislocations of three types of semiconductor nanowires: ZnTe, CdTe, and complex ZnTe/(Cd,Zn)Te core/shell hetero-nanowires grown by a molecular beam epitaxy on (111) Si substrate using a vapor-liquid-solid mechanism. The structural properties and the chemical gradients were measured by transmission electron microscopy methods. The nanowires reveal mainly sphalerite structure, however wurtzite nanowires were also observed.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1399-1405
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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