Autor: Orlowski, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Analysis of 4f Level in Samarium-Rich MBE Grown CdSmTe Sample
Autorzy:: Szamota-Sadowska, K.
Gołacki, Z.
Orłowski, B. A.
Boyn, R.
Johnson, R. J.
Powiązania:: https://bibliotekanauki.pl/articles/1991645.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.At
79.60.-i
79.60.Bm
Opis:: Electronic states of 4f samarium ions were investigated by photoemission spectroscopy in samarium-rich CdSmTe sample obtained by MBE. The photon energy of synchrotron radiation allowed to investigate Fano-type resonance and antiresonance. The energy distribution curve spectra were attributed to the Sm 4d-4f transition. The shape of the constant initial states spectra was compared with this one obtained for atomic samarium.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 560-564
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Valence Band Density of States and Mn 3d Contribution in Mn$\text{}_{1-x}$Mg$\text{}_{x}$Te
Autorzy:: Kowalski, B. J.
Guziewicz, E.
Kopalko, K.
Orłowski, B. A.
Janik, E.
Wojtowicz, T.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/1991616.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.20.Nr
79.60.-i
Opis:: Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn$\text{}_{0.44}$ Mg$\text{}_{0.56}$Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 401-405
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Band Structure of Mn/ZnTe Studied, by Angle-Resolved Photoelectron Spectroscopy
Autorzy:: Kowalski, B. J.
Orlowski, B. A.
Pietrzyk, M.
Kaczor, P.
Kopalko, K.
Mickievicius, S.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/2044491.pdf
Data publikacji:: 2005-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.23.-k
Opis:: The electronic band structure of Mn/ZnTe(110) (1×1) has been studied by angle-resolved photoelectron spectroscopy. The sets of spectra were acquired for the clean surface and after in situ deposition of 0.4 ML of Mn, in order to compare the band structures and to reveal changes brought about by the presence of Mn. The experimental band structure diagram of Mn/ZnTe along theΓ-K direction in the Brillouin zone has been derived from the experimental data. Indications of interaction between the Mn 3d states and sp$\text{}^{3}$ bands of the semiconductor are discussed.
Źródło:: Acta Physica Polonica A; 2005, 108, 5; 735-740
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
Autorzy:: Guziewicz, E.
Szamota-Sadowska, K.
Kowalski, B. J.
Grodzicka, E.
Story, T.
Orłowski, B. A.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/1963380.pdf
Data publikacji:: 1997-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.35.Fx
79.60.-i
Opis:: We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
Źródło:: Acta Physica Polonica A; 1997, 91, 4; 783-787
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: The Surface Hydro-Oxidation of LaNiO$\text{}_{3-x}$ Thin Films
Autorzy:: Mickevičius, S.
Grebinskij, S.
Bondarenka, V.
Lisauskas, V.
Šliužienė, K.
Tvardauskas, H.
Vengalis, B.
Orłowski, B. A.
Osinniy, V.
Drube, W.
Powiązania:: https://bibliotekanauki.pl/articles/2047365.pdf
Data publikacji:: 2007-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Nr
29.20.Lq
Opis:: The high-energy X-ray photoelectron spectroscopy was used to determine the composition and chemical structure of epitaxial LaNiO$\text{}_{3-x}$ films obtained by a reactive dc magnetron sputtering. It was found that the oxide and hydroxide species of La and Ni are on the films surface. The thickness of hydroxide enriched layer, estimated from the oxide and hydroxide peak intensities, is about 2 nm.
Źródło:: Acta Physica Polonica A; 2007, 112, 1; 113-120
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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