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Wyszukujesz frazę "Karwasz, Z." wg kryterium: Wszystkie pola

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    Wyświetlanie 1-8 z 8
    Tytuł:
    Genetic Algorithms for Positron Lifetime Data
    Autorzy:
    Karbowski, A.
    Fisz, J.
    Karwasz, G.
    Kansy, J.
    Brusa, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812491.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    71.55.Cn
    Opis:
    Recently, genetic algorithms have been applied for ultrafast optical spectrometry in systems with several convoluted lifetimes. We apply these algorithms and compare the results with POSFIT (by Kirkegaard and Eldrup) and LT programme (by Kansy). The analysis was applied to three types of samples: molybdenum monocrystals, Czochralski-grown silicon with oxygen precipitates, Si with under-surface cavities obtained by He + H ion co- implantation. In all three tests, the genetic algorithm performs very well, in particular for short lifetimes. Further developments to model the resolution function in genetic algorithms are needed.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1365-1372
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure
    Autorzy:
    Karwasz, G. P.
    Brusa, R. S.
    Misiuk, A.
    Zecca, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2008074.pdf
    Data publikacji:
    1999-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    71.55.Cn
    Opis:
    Two positron techniques have been applied to study dynamics of oxygen precipitation in Czochralski-grown silicon, annealed under high (up to 1.4 GPa) pressure. Lifetime measurements were performed with 180 ps resolution; Doppler broadening with a variable-energy slow-positron beam. Different thermal treatings rise the mean lifetime of positrons from 222 ps in as-grown samples up to 227 ps. In samples with a high (up to 85%) amount of oxygen precipitated, an intermediate (550-800 ps) lifetime is observed.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 4; 575-580
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Porosity of Low-κ Materials Studied by Slow Positron Beam
    Autorzy:
    Brusa, R. S.
    Macchi, C.
    Mariazzi, S.
    Karwasz, G. P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2042213.pdf
    Data publikacji:
    2005-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    68.60.Dv
    68.90.+g
    Opis:
    The information about porosity in low-κ materials obtainable by depth profiling with positron annihilation spectroscopy is reviewed. In particular we focus on Doppler broadening spectroscopy and 2-3γ ratio of positronium measurements on SiOCH and amorphous carbon a-C:F:H thin films produced by plasma enhanced chemical vapour deposition.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 4; 702-711
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Systematic Measurements of Doppler-Coincidence Spectra for Positron Annihilation in Pure Metals and Semiconductors
    Autorzy:
    Deng, W.
    Pliszka, D.
    Brusa, R. S.
    Karwasz, G. P.
    Zecca, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030758.pdf
    Data publikacji:
    2002-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    Opis:
    Doppler-broadening measurements of the electron-positron annihilation line in twenty six elements are presented. The adopted coincidence technique allows to reduce the background and point out the contribution of positron annihilation with core electrons. The changes of the high momentum contribution is presented for selected examples and a semiempirical analysis of the dependence on electronic structure is performed. Measured data are in a good agreement with recent theoretical calculations and can be used to identification of impurities surrounding open volume defects.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 6; 875-892
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Surfaces of Electron-Emitting Glasses Studied by a Slow Positron Beam
    Autorzy:
    Pliszka, D.
    Gazda, M.
    Kusz, B.
    Trzebiatowski, K.
    Karwasz, G. P.
    Deng, W.
    Brusa, R. S.
    Zecca, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2025748.pdf
    Data publikacji:
    2001
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    Opis:
    Semi-conducting glasses used for electron multipliers and microchannel plate devices are obtained by surface modification of Pb or Bi-reach silicon-based glasses. The reduced layer extends down to 200-500 nm, much more than the effective depth of the electron-emitting layer. By the use of slow-positron beam we monitor the structural changes undergoing in near-to-surface layers after isothermal annealing. The measurements suggest a possible correlation between secondary-electron emission coefficient and the Doppler-broadening S-parameter. On these samples there were also performed atomic force microscopy, secondary electron emission, differential scanning calorimetry, and electric conductivity measurements.
    Źródło:
    Acta Physica Polonica A; 2001, 99, 3-4; 465-472
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profiling of Defects in He Implanted $SiO_2$
    Autorzy:
    Mariazzi, S.
    Toniutti, L.
    Brusa, R.
    Duarte Naia, M.
    Karbowski, A.
    Karwasz, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812538.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    68.55.-a
    61.82.Ms
    61.72.J-
    Opis:
    Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1447-1453
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Amorphous Carbon Thin Films Deposited on Si and PET: Study of Interface States
    Autorzy:
    Mariazzi, S.
    Macchi, C.
    Karwasz, G. P.
    Brusa, R. S.
    Laidani, N.
    Bartali, R.
    Gottardi, G.
    Anderle, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043339.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ac
    71.60.+z
    73.20.At
    78.70.Bj
    Opis:
    Thin carbon films with various thicknesses, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a radio frequency plasma enhanced chemical vapour deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim of these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited the same open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 842-847
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron-Annihilation, Structural and Optical Studies on Properties of Nanostructured $ZrO_2,$ $ZnO,$ $Bi_2O_3$ and $ZnO-Bi_2O_3$
    Autorzy:
    Fidelus, J.
    Karbowski, A.
    Grabis, J.
    Jusza, A.
    Piramidowicz, R.
    Brusa, R.
    Karwasz, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492669.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    71.55.Cn
    Opis:
    Nanostructured oxides, like $ZrO_2,$ on $ZnO$ and $Bi_2O_3$ show interesting electronic and photovoltaic properties. Pressed and annealed samples were obtained from nanopowders grown in hydrothermal or plasma processes. Positron annihilation (the Doppler broadening depth-resolved, positron lifetime) techniques were used to trace structural changes in samples after annealing. Photoluminescence spectra of all investigated samples show broad-band emission in the visible, with intensity depending on annealing temperature. The change in nanoporosity and positron lifetimes correlate well with changes in photoluminescence properties. The nature of broad photoluminescence bands is to be understood; further positron studies via the Doppler coincidence method would help in identifying the nature of defects in these samples.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-066-A-068
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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