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    Wyświetlanie 1-8 z 8
    Tytuł:
    Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
    Autorzy:
    Laurent, T.
    Sharma, R.
    Torres, J.
    Nouvel, P.
    Blin, S.
    Chusseau, L.
    Palermo, C.
    Varani, L.
    Cordier, Y.
    Chmielowska, M.
    Faurie, J.
    Beaumont, B.
    Shiktorov, P.
    Starikov, E.
    Gruzinskis, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505459.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    78.67.De
    73.21.Fg
    Opis:
    We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 107-110
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Skyrmions in a Hole Gas with Large Spin Gap and Strong Disorder
    Autorzy:
    Bryja, L.
    Ryczko, K.
    Wójs, A.
    Misiewicz, J.
    Potemski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046907.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Mf
    73.21.Fg
    78.20.Ls
    78.67.De
    Opis:
    In the photoluminescence excitation spectra of two-dimensional valence holes with large spin gap and strong disorder we find evidence for quantum Hall ferromagnetism and small skyrmions around the Landau level filling factorν=1. This interpretation is supported by numerical calculations.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 163-168
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temperature Dependence of Exciton and Trion States in CdTe Quantum Well at High Magnetic Fields
    Autorzy:
    Andronikov, D.
    Platonov, A.
    Crooker, S.
    Barrick, T.
    Karczewski, G.
    Kochereshko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043711.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.Ji
    73.21.Fg
    78.55.Et
    78.67.De
    Opis:
    Temperature dependent photoluminescence and reflectivity spectra of excitons, singlet and triplet states of trions were studied in CdTe-based quantum wells at high magnetic fields. Interesting features of the exciton and trion spectral lines with altering temperatures are explained by analyzing the thermal population and the kinetics of the exciton-electron-trion energetic system.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 653-660
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Siekacz, M.
    Kryśko, M.
    Feduniewicz-Żmuda, A.
    Gladysiewicz, M.
    Kudrawiec, R.
    Misiewicz, J.
    Nevou, L.
    Kheirodin, N.
    Julien, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811923.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.De
    68.65.Fg
    73.21.Fg
    81.15.Hi
    Opis:
    GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1093-1099
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers
    Autorzy:
    Vorobjev, L.
    Firsov, D.
    Shalygin, V.
    Panevin, V.
    Sofronov, A.
    Ustinov, V.
    Zhukov, A.
    Egorov, A.
    Andrianov, A.
    Zakhar'in, A.
    Ganichev, S.
    Danilov, S.
    Kozlov, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813218.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Fg
    71.55.-i
    71.55.Eq
    73.21.Fg
    73.61.Ey
    78.55.Cr
    78.66.-w
    78.67.De
    Opis:
    We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 925-928
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
    Autorzy:
    Syperek, M.
    Ryczko, K.
    Dallner, M.
    Dyksik, M.
    Motyka, M.
    Kamp, M.
    Höfling, S.
    Misiewicz, J.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398579.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    78.47.D-
    78.30.Fs
    78.47.jg
    78.55.Cr
    78.67.De
    Opis:
    Room temperature carrier kinetics has been investigated in the type-II W-design $AlSb//InAs//Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}//InAs//AlSb$ quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1224-1228
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    III-Nitride Nanostructures for Infrared Optoelectronics
    Autorzy:
    Monroy, E.
    Guillot, F.
    Leconte, S.
    Bellet-Amalric, E.
    Nevou, L.
    Doyennette, L.
    Tchernycheva, M.
    Julien, F. H.
    Baumann, E.
    Giorgetta, F.
    Hofstetter, D.
    Dang, Le Si
    Powiązania:
    https://bibliotekanauki.pl/articles/2046980.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    78.67.De
    85.60.Gz
    85.35.Be
    81.15.Hi
    81.07.St
    Opis:
    Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 295-301
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optoelectronic Devices Employing One-Dimensional Photonic Structures
    Autorzy:
    Muszalski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811908.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    73.40.Kp
    78.20.Ek
    78.40.Fy
    78.47.Cd
    78.55.Cr
    78.60.Fi
    78.67.De
    Opis:
    This paper reviews the experimental and theoretical results obtained during work on the modern semiconductor devices employing one-dimensional photonic structures. After short review of the physical features of structures consisting of 1D stack of the alternating high and low index layers, particular attention will be given to unique features of the devices employing microcavities: resonant cavity LEDs, resonant-cavity enhanced photo-detectors, vertical cavity surface emitting lasers, and also vertical external cavity surface emitting lasers. At the end the semiconductor saturable absorber mirrors are discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 983-1000
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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