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    Wyświetlanie 1-7 z 7
    Tytuł:
    Study of the clusterization of CdO phase in ZnCdO alloys by modeling fullerene-like Zn₄₄Cd₄O₄₈ cluster
    Autorzy:
    Ovsiannikova, L.
    Kartuzov, V.
    Shtepliuk, I.
    Lashkarev, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1159858.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.-f
    78.55.Et
    81.05.Dz
    81.07.Bc
    Opis:
    The structural, cohesive and electronic properties of fullerene-like isolated Zn₄₄Cd₄O₄₈ cluster with consideration of CdO phase clusterization are studied in the frames of density functional theory B3LYP/3-21G(d). It is revealed that an enlargement of CdO phase content in Zn₄₄Cd₄O₄₈ cluster leads to nonlinear rapid increase in cohesive energy and cluster stability, as well as band-gap energy shrinkage.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-41-A-43
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    XPS and Raman Characterizations of $Zn_{1-x}Cd_{x}O$ Films Grown at the Different Growth Conditions
    Autorzy:
    Shtepliuk, I.
    Khyzhun, O.
    Lashkarev, G.
    Khomyak, V.
    Lazorenko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403642.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    Opis:
    X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the $Zn_{1-x}Cd_{x}O$ semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the $Zn_{1-x}Cd_{x}O$ films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/$O_2$ gas ratio and dc power.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1034-1038
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of $Ar//O_2$ Gas Ratio on the Properties of the $Zn_{0.9}Cd_{0.1}O$ Films Prepared by DC Reactive Magnetron Sputtering
    Autorzy:
    Shtepliuk, I.
    Lashkarev, G.
    Khomyak, V.
    Marianchuk, P.
    Koreniuk, P.
    Myroniuk, D.
    Lazorenko, V.
    Timofeeva, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492665.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    Opis:
    $Zn_{0.9}Cd_{0.1}O$ ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of $Zn_{0.9}Cd_{0.1}O$ films can be controlled by changing the gas ratio of $Ar//O_2$. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-061-A-065
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding
    Autorzy:
    Shtepliuk, I.
    Lashkarev, G.
    Khyzhun, O.
    Kowalski, B.
    Reszka, A.
    Khomyak, V.
    Lazorenko, V.
    Timofeeva, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492932.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    81.05.Dz
    81.07.Bc
    Opis:
    ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire $c-Al_2O_3$ substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in $Ar-O_2$ atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 914-917
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Swift $Xe^{26+}$ Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films
    Autorzy:
    Myroniuk, D.
    Lashkarev, G.
    Shtepliuk, I.
    Skuratov, V.
    Reszka, A.
    Kowalski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376457.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.60.Hk
    Opis:
    Here we report the effect of the irradiation by 167 MeV $Xe^{26+}$ ions (in the fluence range up to 3× $10^{12}$ ions/$cm^2$) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1199-1202
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films
    Autorzy:
    Myroniuk, D.
    Lashkarev, G.
    Shtepliuk, I.
    Lazorenko, V.
    Maslyuk, V.
    Timofeeva, I.
    Romaniuk, A.
    Strelchuk, V.
    Kolomys, O.
    Khomyak, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399153.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    78.55.Et
    71.55.Gs
    Opis:
    Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences $10^{16}$ and $2 \times 10^{16} cm^{-2}$. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 891-894
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy
    Autorzy:
    Gronin, S.
    Sorokin, S.
    Kazanov, D.
    Sedova, I.
    Klimko, G.
    Evropeytsev, E.
    Ivanov, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376051.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    78.55.Et
    78.67.Hc
    68.65.Fg
    Opis:
    This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained $Zn_{1-x}Cd_{x}Se$ (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total $Zn_{1-x}Cd_{x}Se$ quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding $ZnS_{0.17}Se_{0.83}$/ZnSe superlattice were introduced to compensate the compressive stress induced by the $Zn_{1-x}Cd_{x}Se$ quantum well. The graded-index waveguide laser heterostructure with a CdSe/$Zn_{0.65}Cd_{0.35}Se$/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1096-1099
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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