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    Wyświetlanie 1-10 z 10
    Tytuł:
    Structural and optical properties of boron nitride grown by MOVPE
    Autorzy:
    Dąbrowska, A.
    Pakuła, K.
    Bożek, R.
    Rousset, J.
    Ziółkowska, D.
    Gołasa, K.
    Korona, K.
    Wysmołek, A.
    Stępniewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160531.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    78.30.Fs
    78.20.-e
    Opis:
    Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Some Optical Aspects of Thermally Evaporated Lead Oxide Thin Films
    Autorzy:
    Aly, S.
    Kaid, M.
    El-Sayed, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399301.pdf
    Data publikacji:
    2013-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.-g
    81.15.-z
    78.20.-e
    78.20.Ci
    78.40.-q
    Opis:
    The optical properties of lead oxide samples prepared using thermal evaporation technique on unheated glass substrates with different film thicknesses have been studied. The structural characteristics of a lead oxide sample was investigated using X-ray diffraction and it is confirmed to be in the amorphous state. The optical properties of the prepared films were studied by transmittance and reflectance measurements, and the integrated transmittance ($T_\text{UV}$, $T_\text{VIS}$ and $T_\text{Sol}$) in ultraviolet, visible and solar regions was calculated and found to be affected by film thickness. The dependence of absorption coefficient on wavelength was also reported. The energy gap was calculated and has been observed around 3.7 eV.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 4; 713-716
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering
    Autorzy:
    Iljinas, A.
    Burinskas, S.
    Dudonis, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503904.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Cd
    68.55.-a
    78.20.-e
    Opis:
    In this work $Bi_2O_3$ thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the $Bi_2O_3$ films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 60-62
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Pulsed Laser Power Annealing on Structural and Optical Characteristics of ZnSe Thin Films
    Autorzy:
    Aly, S.
    Akl, Alaa
    Howari, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1401905.pdf
    Data publikacji:
    2015-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.-z
    68.55.jd
    68.55.ag
    78.70.Ck
    81.15.Dj
    78.20.-e
    Opis:
    Samples of ZnSe of the same film thickness (320 nm) have been thermally evaporated on unheated quartz substrates using high purity powder. The prepared films were subjected to pulsed laser annealing of two different powers. X-ray diffraction studies revealed that the as-deposited samples were polycrystalline cubic (zinc-blende type) structure. As the annealing power increases, the crystallinity of ZnSe films was improved with preferential orientation along the (111) direction parallel to the substrate surface. Microstructural characterizations have been evaluated using the Debye-Scherrer formula. The absorption coefficient as well as the energy gap for the as-deposited and the annealed samples were also reported.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 3; 414-418
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Near IR Refractive Index for GaInN Heavily Doped with Silicon
    Autorzy:
    Cywiński, G.
    Kudrawiec, R.
    Rzodkiewicz, W.
    Kryśko, M.
    Litwin-Staszewska, E.
    Misiewicz, J.
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791356.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.66.Fd
    81.15.Hi
    68.55.-a
    78.20.-e
    Opis:
    The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 936-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermo-Optical Parameters of Amorphous a-C:N:H Layers
    Autorzy:
    Pieczyńska, E.
    Jaglarz, J.
    Marszalek, K.
    Tkacz-Śmiech, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377543.pdf
    Data publikacji:
    2014-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.60.Fs
    78.20.-e
    78.20.Ci
    78.20.N-
    78.30.Ly
    81.05.U-
    81.15.Gh
    Opis:
    Thermo-optical properties of hydrogenated amorphous carbon nitride layers (a-C:N:H) deposited on crystalline silicon by plasma assisted chemical vapour deposition were studied. The layers were characterized by the Fourier transform infrared spectroscopy and their chemical composition, i.e. [N]/[C] ratio, was determined by energy dispersive X-ray technique. The optic measurements were made by spectroscopic ellipsometer Wollam M2000 equipped with a heated vacuum chamber. The measurements of ellipsometric angles were carried out during heating the sample from room temperature to 300°C. Refractive index, extinction coefficient and the layer thicknesses were calculated by fitting the model of the layer to the ellipsometric data. The results confirm that at about 23°C the layer properties are changed. The measured thermo-optical parameters, dn/dT and dk/dT, show abrupt change from negative to positive values which can be explained by structure graphitization. Simultaneously, the bandgap decreases from 2.5 to 0.7 eV and the layer thickness drops to about 50% of the initial value.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 6; 1241-1245
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films
    Autorzy:
    Mekki, A.
    Tabet, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1219233.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Aa
    78.20.-e
    61.05.cp
    61.05.cj
    Opis:
    Transparent zinc oxide thin films doped with molybdenum have been prepared using a DC reactive magnetron sputtering on glass substrates from metallic ZnMo target. The three films, called A, B, and C, had 1.9 at.% Mo, 2.8 at.% Mo and 4.7 at.% Mo, respectively. The composition of the films was determined by X-ray photoelectron spectroscopy. The analysis of Mo 3 $d_{5/2}$ core level spectra indicated that Mo exist in the films in $Mo^{6+}$ oxidation state irrespective of the Mo content in the film. The X-ray diffraction spectrum of film A showed a texture along the 002 orientation, while that of film B showed two peaks, one at $θ ≈ 34.5°$ and the other at $≈ 36.5°$ corresponding to 002 and 101 orientations, respectively. Film C showed two small peaks corresponding to 100 and 110 orientations. Optical measurements showed that all three films had a transmittance of about 80%. The energy band gap showed a linear increase as Mo concentration increases from 3.29 eV to 3.38 eV. The atomic force microscopy image of film A showed a homogeneous morphology of the surface of the film, while the atomic force microscopy images of films B and C showed an inhomogeneous one.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 365-367
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanostructure Formation during Amorphous Carbon Films Deposition
    Autorzy:
    Rutkuniene, Z.
    Vigricaite, L.
    Grigonis, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1366053.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.uj
    81.15.-z
    78.20.-e
    82.80.Gk
    Opis:
    Influence of Cu particles for the carbon nanostructures formation during a-C:H films deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by $Ar^{+}$ ions for the Cu particles deposition on the silicon before a-C:H films formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the first stage of carbon film deposition. Structure of a:C-H films and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the film, then deposition time was 300 s.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1303-1305
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural Characteristics and Optical Properties of Thermally Oxidized Zinc Films
    Autorzy:
    Rusu, D.
    Rusu, G.
    Luca, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505094.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    68.55.-a
    68.55.J-
    81.15.Aa
    78.20.-e
    Opis:
    Zinc oxide (ZnO) thin films (with thickness ranged from 780 nm to 1150 nm) were prepared by thermal oxidation in air (at 600-700 K, for 20-30 min) of vacuum evaporated metallic zinc films. The Zn films were deposited on glass substrates at room temperature. The crystalline structure of ZnO thin film samples was investigated using X-ray diffraction technique. The diffraction patterns revealed that the ZnO thin films were polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to substrate surface. Some important structural parameters (lattice parameters of the hexagonal cell, crystallite size, Zn-O bond length, residual stress, etc.) of the films were determined. The surface morphology of the prepared ZnO thin films, investigated by atomic force microscopy, revealed a uniform columnar structure. The spectral dependence of transmission coefficient has been studied in the wavelength range from 300 nm to 1700 nm. The optical energy band gap calculated from the absorption spectra (supposing allowed direct band-to-band transitions) are in the range 3.17-3.19 eV. The dependence of the microstructural and optical characteristics on the preparation conditions (oxidation temperature, oxidation time, etc.) of the oxidized zinc films is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 850-856
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of the Diffused Reflectance and Microstructure for the Phase Transformation of $KNO_{3}$
    Autorzy:
    Hafez, M.
    Yahia, I.
    Taha, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398861.pdf
    Data publikacji:
    2015-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    64.60.-i
    61.43.Gt
    78.20.-e
    72.15.Eb
    Opis:
    Optical, micro-structural, thermal and electrical properties of the investigated potassium nitrate ($KNO_{3}$) samples were characterized by various techniques such as X-ray analysis, scanning electron microscopy, UV-VIS-NIR absorption and differential scanning calorimetry. The presence of structural phase transition is checked by differential scanning calorimetry, electrical and X-ray analysis measurement. The thermal energy required for such transformation is calculated and found to be 46.2 J/g. The activation energies of the electrical conduction for $KNO_{3}$ were found to be 0.236 eV for phase II and 0.967 eV for phase I. The optical band gaps of $KNO_{3}$ for the higher photon energy are calculated and equal to 5.03 and 5.01 eV for II and I phases, respectively and at lower photon energy, the values are equal to 3.84 and 3.80 eV for II and I phases, respectively. The data which leads to the interpretation of electronic spectra of potassium nitrate is possible to assume that the long wavelength part of absorption band corresponds to n-π* transition. Then, the short-wavelength part is probably due to the transition in a higher excited state of symmetry π-π*. The mean values of crystalline sizes are determined by scanning electron microscopy analysis. Such information can considerably aid in understanding the process of transformations near the phase crystal modifications at 129°C.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 3; 734-740
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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