Autor: Karwasz, G. P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure
Autorzy:: Karwasz, G. P.
Brusa, R. S.
Misiuk, A.
Zecca, A.
Powiązania:: https://bibliotekanauki.pl/articles/2008074.pdf
Data publikacji:: 1999-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.60.+z
78.70.Bj
71.55.Cn
Opis:: Two positron techniques have been applied to study dynamics of oxygen precipitation in Czochralski-grown silicon, annealed under high (up to 1.4 GPa) pressure. Lifetime measurements were performed with 180 ps resolution; Doppler broadening with a variable-energy slow-positron beam. Different thermal treatings rise the mean lifetime of positrons from 222 ps in as-grown samples up to 227 ps. In samples with a high (up to 85%) amount of oxygen precipitated, an intermediate (550-800 ps) lifetime is observed.
Źródło:: Acta Physica Polonica A; 1999, 95, 4; 575-580
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Porosity of Low-κ Materials Studied by Slow Positron Beam
Autorzy:: Brusa, R. S.
Macchi, C.
Mariazzi, S.
Karwasz, G. P.
Powiązania:: https://bibliotekanauki.pl/articles/2042213.pdf
Data publikacji:: 2005-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.60.+z
78.70.Bj
68.60.Dv
68.90.+g
Opis:: The information about porosity in low-κ materials obtainable by depth profiling with positron annihilation spectroscopy is reviewed. In particular we focus on Doppler broadening spectroscopy and 2-3γ ratio of positronium measurements on SiOCH and amorphous carbon a-C:F:H thin films produced by plasma enhanced chemical vapour deposition.
Źródło:: Acta Physica Polonica A; 2005, 107, 4; 702-711
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Systematic Measurements of Doppler-Coincidence Spectra for Positron Annihilation in Pure Metals and Semiconductors
Autorzy:: Deng, W.
Pliszka, D.
Brusa, R. S.
Karwasz, G. P.
Zecca, A.
Powiązania:: https://bibliotekanauki.pl/articles/2030758.pdf
Data publikacji:: 2002-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.60.+z
78.70.Bj
Opis:: Doppler-broadening measurements of the electron-positron annihilation line in twenty six elements are presented. The adopted coincidence technique allows to reduce the background and point out the contribution of positron annihilation with core electrons. The changes of the high momentum contribution is presented for selected examples and a semiempirical analysis of the dependence on electronic structure is performed. Measured data are in a good agreement with recent theoretical calculations and can be used to identification of impurities surrounding open volume defects.
Źródło:: Acta Physica Polonica A; 2002, 101, 6; 875-892
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Amorphous Carbon Thin Films Deposited on Si and PET: Study of Interface States
Autorzy:: Mariazzi, S.
Macchi, C.
Karwasz, G. P.
Brusa, R. S.
Laidani, N.
Bartali, R.
Gottardi, G.
Anderle, M.
Powiązania:: https://bibliotekanauki.pl/articles/2043339.pdf
Data publikacji:: 2005-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ac
71.60.+z
73.20.At
78.70.Bj
Opis:: Thin carbon films with various thicknesses, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a radio frequency plasma enhanced chemical vapour deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim of these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited the same open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface.
Źródło:: Acta Physica Polonica A; 2005, 107, 5; 842-847
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Surfaces of Electron-Emitting Glasses Studied by a Slow Positron Beam
Autorzy:: Pliszka, D.
Gazda, M.
Kusz, B.
Trzebiatowski, K.
Karwasz, G. P.
Deng, W.
Brusa, R. S.
Zecca, A.
Powiązania:: https://bibliotekanauki.pl/articles/2025748.pdf
Data publikacji:: 2001
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.60.+z
78.70.Bj
Opis:: Semi-conducting glasses used for electron multipliers and microchannel plate devices are obtained by surface modification of Pb or Bi-reach silicon-based glasses. The reduced layer extends down to 200-500 nm, much more than the effective depth of the electron-emitting layer. By the use of slow-positron beam we monitor the structural changes undergoing in near-to-surface layers after isothermal annealing. The measurements suggest a possible correlation between secondary-electron emission coefficient and the Doppler-broadening S-parameter. On these samples there were also performed atomic force microscopy, secondary electron emission, differential scanning calorimetry, and electric conductivity measurements.
Źródło:: Acta Physica Polonica A; 2001, 99, 3-4; 465-472
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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