- Tytuł:
- Orientation of Metastable EL2 under Uniaxial Stress
- Autorzy:
-
Babiński, A.
Wysmołek, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1931913.pdf
- Data publikacji:
- 1995-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
72.20.Fr
72.80.Ey - Opis:
- Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 1; 137-140
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł