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Wyświetlanie 1-15 z 22
Tytuł:
Structural Properties and Temperature Behaviour οf Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films
Autorzy:
Kulyk, B.
Figà, V.
Kapustianyk, V.
Panasyuk, M.
Serkiz, R.
Demchenko, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400391.pdf
Data publikacji:
2013-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ps
78.40.Fy
68.55.ag
Opis:
Silver- and copper-doped ZnO films were prepared by radio-frequency magnetron sputtering on glass substrates. The influence of dopants content on the structural, morphological properties as well as on evolution of the optical absorption edge was considered. It has been found that Ag- and Cu-doped ZnO films are characterized by wurtzite crystalline structure with the preferred direction of crystalline orientation (002). The sizes of grains within the films were found to be dependent on the type of dopant. The temperature evolution of the optical absorption edge is described by the modified Urbach rule that reflects polycrystalline nature of the material. The corresponding parameters concerning electron- (exciton-) phonon interaction, phonon energies and temperature changes of the band-gap were determined and analysed.
Źródło:
Acta Physica Polonica A; 2013, 123, 1; 92-97
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, Optical, and Electrical Studies on Pulse Plated $AgInSe_2$ Films
Autorzy:
Murugan, S.
Murali, K.
Powiązania:
https://bibliotekanauki.pl/articles/1205200.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
73.61.Jc
88.40.hj
88.40.jn
Opis:
In this work, the pulse electrodeposition technique was employed for the first time to deposit $AgInSe_2$ films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM $SeO_2$. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 $Ω$/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to $AgInSe_2$. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 $Ω$ cm to 12.4 $Ω$ cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/$AgInSe_2$ solar cells increased with duty cycle.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 727-731
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Kinetics of Charge Transport in Wide-Band Semiconductors at the Detection of X-Ray Radiation
Autorzy:
Degoda, V.
Sofienko, A.
Powiązania:
https://bibliotekanauki.pl/articles/1550473.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.kg
68.55.ag
07.77.Ka
Opis:
As a result of absorption of X-ray quantum in a semiconductor, the generation of electron-hole pairs takes place in a small volume (diameter < 0.5 μm). Their surplus energy is lost due to the scattering on phonons of the crystal lattice. Spatial distribution of the charge carriers makes the form of current pulse on electrodes of the crystal complicated when an external electric field is applied. We present a logical chart of construction of basic kinetic model of X-ray conductivity (XRC) in semiconductors that uses the successive in time calculation of the spatial distribution of free charge carriers and the diffusive-drift model of motion of free carriers in a solid. The basic form of current pulse in an external circle was obtained in the analytical kind for the case of an ideal semiconductor, e.g. that does not contain deep traps and recombination centers, as well as for the case of a crystal with dominant shallow or deep traps of electrons and holes.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 155-160
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatially Resolved X-ray Diffraction Technique for Crystallographic Quality Inspection of Semiconductor Microstructures
Autorzy:
Domagala, J.
Czyzak, A.
Zytkiewicz, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1811925.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
61.72.Ff
68.55.ag
Opis:
Spatially resolved X-ray diffraction is introduced and applied for micro-imaging of strain in GaAs and GaSb layers grown by epitaxial lateral overgrowth on GaAs substrates. We show that laterally overgrown parts of the layers (wings) are tilted towards the underlying mask. By spatially resolved X-ray diffraction mapping the direction of the tilt and distribution of tilt magnitude across the width of each layer can be readily determined. This allows measuring of the shape of the lattice planes in individual epitaxial stripes. In GaSb/GaAs heteroepitaxial laterally overgrown layers local mosaicity in the wing area was found. By spatially resolved X-ray diffraction the size of microblocks and their relative misorientation were analyzed. Finally, microscopic curvature of lattice planes confined between two neighboring slip bands in thermally strained Si wafers is measured. All these examples show advantages of spatially resolved X-ray diffraction over a standard X-ray diffraction when applied for analysis of crystalline microstructures.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1101-1107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rocking Curve Imaging Studies of Laterally Overgrown GaAs and GaSb Epitaxial Layers
Autorzy:
Wierzbicka, A.
Lübbert, D.
Domagała, J.
Zytkiewicz, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1791425.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.55.ag
81.15.Lm
Opis:
X-ray rocking curve imaging technique was used to study crystallographic perfection of laterally overgrown epitaxial structures. We focus on rocking curve imaging studies of Si-doped GaAs and GaSb laterally overgrown layers grown by liquid phase epitaxy on $SiO_{2}$ masked GaAs and GaSb/GaAs substrates, respectively. High spatial resolution offered by rocking curve imaging technique allows studying the effect of laterally overgrown epitaxial wing tilt towards the mask. Distribution of tilt magnitude over the area of laterally overgrown epitaxial stripes is easily determined. In heteroepitaxial GaSb/GaAs laterally overgrown epitaxial structures local mosaicity in the wing area was detected. Since individual grains are clearly visible on rocking curve imaging maps, their size and relative misorientation can be determined.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 976-978
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oscillatory regularity of charge carrier trap energy spectra in ZnSe single crystals
Autorzy:
Degoda, V.
Gumenjuk, A.
Pavlova, N.
Sofiienko, A.
Sulima, S.
Powiązania:
https://bibliotekanauki.pl/articles/1075346.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.kg
68.55.ag
07.77.Ka
Opis:
This article presents the results of an experimental investigation of the energy spectra of charge carrier traps in undoped high-resistivity ZnSe single crystals. Fourteen peaks were found in the thermostimulated luminescence spectra of the ZnSe samples at temperatures between 8 K and 450 K, and the thermal activation energies of the charge carrier traps were estimated for the most intense peaks. It was found that the energy spectra of the charge carrier traps in ZnSe exhibit oscillatory regularity, and the energy of a vibrational quantum was estimated to be ħω = 206 cm¯¹, which is in good agreement with the vibrational mode in the Raman spectrum. Additionally, a linear relationship was observed between the thermal activation energies of the charge carrier traps and the temperature positions of the maxima in the thermostimulated luminescence of ZnSe.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 304-309
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
LT-InGaAs Layer Grown for Near Surface SESAM Application
Autorzy:
Jasik, A.
Muszalski, J.
Kosmala, M.
Pierściński, K.
Powiązania:
https://bibliotekanauki.pl/articles/1807666.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.jj
68.55.ag
68.65.Ac
81.15.Hi
81.65.Rv
Opis:
We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-56-S-59
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Zinc Incorporation in $CuInS_{2}$ Thin Films Grown by Vacuum Evaporation Method
Autorzy:
Ben Rabeh, M.
Kanzari, M.
Rezig, B.
Powiązania:
https://bibliotekanauki.pl/articles/1808116.pdf
Data publikacji:
2009-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
78.20.Ci
81.15.Ef
73.61.Le
Opis:
Structural, optical and electrical properties of Zn-doped $CuInS_2$ thin films grown by double source thermal evaporation method were studied. Evaporated thin films were grown from $CuInS_2$ powder by vacuum evaporation using resistively heated tungsten boats. The element Zn was evaporated from a thermal evaporation source. The amount of the Zn source was determined to be 0-4% molecular weight compared with $CuInS_2$ source. The effects of Zn on films properties were investigated using X-ray diffraction, optical transmission and reflection spectra. The films were annealed in vacuum at 260°C for 2 h. The Zn-doped samples have band-gap energy of 1.474-1.589 eV. We found that the Zn-doped $CuInS_2$ thin films exhibit p-type conductivity and we predict that Zn species can be considered as suitable candidates for use as doped acceptors to fabricate $CuInS_2$-based solar cells.
Źródło:
Acta Physica Polonica A; 2009, 115, 3; 699-703
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tuning Transparent Supercapacitor Performance by Controlling the Morphology of its ZnO Electrodes
Autorzy:
Borysiewicz, M.
Wzorek, M.
Ekielski, M.
Kaczmarski, J.
Wojciechowski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1032336.pdf
Data publikacji:
2017-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
82.47.Uv
68.35.bg
68.55.ag
81.15.Cd
Opis:
Transparent supercapacitors were fabricated using nanostructures ZnO electrodes deposited using reactive magnetron sputtering. By fine tuning the deposition process parameters the electrodes with different morphologies were obtained, from hierarchical through sponge-like to nanocolumnar. The device performance related to the electrode morphology was assessed. It was found that the nanocolumnar electrodes provided best performance both in terms of effective device capacitance (18.3 μF/cm²) and transparency ( ≈ 100% in the visible range). The worst performance, with 80% lower effective capacitance, was obtained in the devices with the sponge-like morphology.
Źródło:
Acta Physica Polonica A; 2017, 131, 6; 1550-1553
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD
Autorzy:
Wesołowski, M.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807649.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.Ea
68.55.A-
68.55.ag
68.55.J-
68.55.Nq
Opis:
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-62-S-64
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
Autorzy:
Borysiewicz, M.
Kamińska, E.
Piotrowska, A.
Pasternak, I.
Jakieła, R.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1811915.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.49.Sf
68.55.ag
81.40.Ef
Opis:
Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1061-1066
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effects of RF Power on Electrical and Structural Properties of Sputtered $SnO_2$:Sb Thin Films
Autorzy:
Cevher, O.
Guler, M.
Tocoglu, U.
Cetinkaya, T.
Akbulut, H.
Okumus, S.
Powiązania:
https://bibliotekanauki.pl/articles/1218075.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.55.ag
81.15.Cd
Opis:
In this work, antimony doped tin oxide ($SnO_2$:Sb) thin films were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates. The base pressure in the sputtering chamber was 1.0 Pa. The $SnO_2$:Sb thin films were deposited for 1.0 h in a mixture of Ar and $O_2$ environment with $O_2$/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers. The microstructure of $SnO_2$:Sb thin films was assessed using a field emission scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diffraction. The average surface roughness $(R_{a})$ was measured with atomic force microscopy. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thicknesses of the films were measured by surface profiler.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 293-295
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Analysis and Numerical Simulation of $Cu_3BiS_3$ Absorbing Layer Solar Cell through the wxAMPS and Finite Element Method
Autorzy:
Mesa, F.
Ballesteros, V.
Dussan, A.
Powiązania:
https://bibliotekanauki.pl/articles/1219288.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Rh
02.70.Bf
07.05.Tp
68.55.ag
Opis:
The properties and the efficiency of a semiconductor thin film depend on the state of stress and defects in the film structure. When the film is growing layer by layer, the elastic energy due to deformation stress between the substrate and the film is released partly due to the formation of dislocations in the critical thickness deformation. In this paper, we present a finite element analysis of the stress state in a thin film of $Cu_3BiS_3$ as a function of thickness and elastic energy release by nucleation of dislocations. Initially, we analyze the stress contours associated with the epitaxial growth and dislocation nucleation and then combine these two in order to study the effective potential energy state of the system. Finally, the tool wxAMPS is today an important application for simulation of solar cells with high reliability and an improved design over its analysis of microelectronic and photonic structures predecessor, incorporating physical principles concerning photovoltaic phenomena and uses a new method for solving algorithms, combining Newton and Gummel approaches, which provides greater stability and speed of computation.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 385-387
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Pulsed Laser Power Annealing on Structural and Optical Characteristics of ZnSe Thin Films
Autorzy:
Aly, S.
Akl, Alaa
Howari, H.
Powiązania:
https://bibliotekanauki.pl/articles/1401905.pdf
Data publikacji:
2015-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
68.55.jd
68.55.ag
78.70.Ck
81.15.Dj
78.20.-e
Opis:
Samples of ZnSe of the same film thickness (320 nm) have been thermally evaporated on unheated quartz substrates using high purity powder. The prepared films were subjected to pulsed laser annealing of two different powers. X-ray diffraction studies revealed that the as-deposited samples were polycrystalline cubic (zinc-blende type) structure. As the annealing power increases, the crystallinity of ZnSe films was improved with preferential orientation along the (111) direction parallel to the substrate surface. Microstructural characterizations have been evaluated using the Debye-Scherrer formula. The absorption coefficient as well as the energy gap for the as-deposited and the annealed samples were also reported.
Źródło:
Acta Physica Polonica A; 2015, 128, 3; 414-418
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of $SiO_2$/n-Type 4H-SiC Interface
Autorzy:
Król, K.
Sochacki, M.
Szmidt, J.
Powiązania:
https://bibliotekanauki.pl/articles/1363825.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
68.55.ag
72.20.-i
72.25.-b
Opis:
Silicon carbide (SiC) is the only wide-bandgap semiconductor capable of forming native dielectric layer of $SiO_2$ by thermal oxidation. This unique property of SiC combined with its high thermal conductivity and high critical field makes this semiconductor material suitable for high power electronic devices. Unfortunately, the state-of-the art technology does not use the full benefits of the material, especially in the case of MOSFET transistors. This is caused by insufficient electrical parameters of $SiO_2$/SiC interface. Two-component structure of the material and its high density result in high level of interface traps reducing the surface mobility and thus increasing series resistance of the device. One of the proposed methods of reducing the trap density in SiC MOS structure is a shallow nitrogen implantation prior to oxidation. This technique is based on the observation that introducing nitrogen into the $SiO_2$/SiC system results in significant reduction of trap states density and increase of the channel effective mobility. The shallow implantation technique has been reported to be as much effective as nitric oxide annealing which is one of the most effective techniques for oxide quality improvement in case of SiC. Unlike the diffusion based techniques, like postoxidation annealing, implantation of the nitrogen prior oxidation has the possibility of nitrogen concentration control near the oxide interface during oxidation process itself. This property is important since it was shown that the improvement degree is directly proportional to amount of nitrogen built in the vicinity of $SiO_2$/SiC interface during oxidation. However, previous investigations about this technique were inconclusive about the influence of implantation parameters and process conditions on observed effects. Both improvement and deterioration of interface quality was observed by different researchers. This behavior was never explained clearly. The primary objective of this research is to analyze the impact of implantation conditions on electrical properties of $SiO_2$/SiC MOS structure. This analysis is used to evaluate a hypothetical description of physical phenomena during oxidation of shallowly implanted substrates.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1033-1037
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 22

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