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Tytuł:
Radiation Damage Centers in Cholesteryl Heptanoate
Autorzy:
Sayin, U.
Can, C.
Türkkan, E.
Dereli, Ö.
Ozmen, A.
Yüksel, H.
Powiązania:
https://bibliotekanauki.pl/articles/1399506.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
Opis:
Cholesterol takes part significantly in many biological mechanisms and as important component for manufacture of bile acids, steroid hormones, and several fat-soluble vitamins. To determine magnetic properties of cholesteryl heptanoate $(C_{34}H_{58}O_2)$ which is an important cholesteryl ester in human life and new technology, the single crystals of cholesteryl heptanoate were grown by slow evaporation of concentrated ethyl acetate solution and the grown single crystals were irradiated at room temperature with $\text{}^{60}Co \gamma $ ray. The radical produced by gamma irradiation has been investigated in the range of temperatures 123-330 K for different orientations of the crystal in a magnetic field by EPR. Radiation damage center was attributed to radical $ĊH_α CH_{2β}$. The g factor and hyperfine coupling constants have slight dependence on temperature and evident dependence on the orientation of the magnetic field. Determined g factor and hyperfine coupling constants for the radical $ĊH_α CH_{2β}$ were found to be anisotropic with the average values $g_{av}=2.0036$, $(a_{CH_\alpha})_{av}=14.52 G, (a_{CH_{2\beta}})_{av}=25.78 G$.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 70-73
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of High Energy Ion Implantation on the Structure and Mechanical Properties of Aluminium Alloys
Autorzy:
Anishchik, V.
Poliak, N.
Ponaryadov, V.
Opielak, M.
Boiko, O.
Powiązania:
https://bibliotekanauki.pl/articles/1033770.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
Opis:
The effect of implantation of Ne⁺, Kr⁺, and Bi⁺ ions over the energy range 26-710 MeV on the structural-phase state and the mechanical properties of the aluminum-based alloys (Al-Cu, Al-Cu-Mg, Al-Cu-Zn, Al-Mn) was studied. The revealed peculiarities of variations in the structure, phase composition, and mechanical properties of aluminum alloys are attributed to the electron deceleration of ions making the principal contribution to the formation of radiation defects which enhance the diffusion processes in the targets.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 291-294
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Possibilities of Swift Heavy Ion Implantation in Material Science and Technology
Autorzy:
Słowiński, B.
Powiązania:
https://bibliotekanauki.pl/articles/2011021.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
Opis:
We summarise briefly the advantages of swift heavy ions (≈ 1 MeV/u) application to analysis and treating of solids in order to modify their properties. As an illustration some examples of this application are quoted.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 239-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation Studies in Silicon Implanted with High-Energy Protons
Autorzy:
Wieteska, K.
Dłużewska, K.
Wierzchowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945258.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 395-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Materials Modifications with Cluster Beams: Bulk and Surface Modification
Autorzy:
Dunlop, A.
Powiązania:
https://bibliotekanauki.pl/articles/2011014.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.-d
61.80.-x
Opis:
It is now well accepted that electronic excitation and ionization arising from the slowing down of swift heavy ions can lead to structural modifications in some metallic targets as it has been known for a long time in insulators. A rapid overview of some results obtained after GeV monoatomic heavy ion irradiations will be given. It will then be shown that new specific effects take place during irradiations with cluster ions. The projectiles used are energetic cluster beams: 10 to 40 MeV Au$\text{}_{4}$ or C$\text{}_{60}$ ions. The rates of linear energy deposition in electronic excitation are close for GeV monoatomic and for 10 MeV cluster ions, but the cluster ions have characteristic velocities which are one order of magnitude smaller than those of monoatomic ions. This leads to a strong spatial localization of the deposited energy during the slowing down process. The density of deposited energy can then reach values as high as a few 100 eV/atom. This very high density of energy deposited in the electronic system of the targets can lead to spectacular structural modifications: generation in the vicinity of the ion trajectories of isolated or agglomerated point defects, new crystalline phases, amorphized regions... After an overview of such damage induced in bulk metals, semiconductors, and insulators, we will discuss surface damage, consisting in the formation of bumps, craters, "lava-flows" on the target surface.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 181-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation in Al$\text{}_{x}$Ga$\text{}_{1-x}$As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Turos, A.
Grötzschel, R.
Powiązania:
https://bibliotekanauki.pl/articles/2011027.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
A series of highly perfect Al$\text{}_{0.45}$Ga$\text{}_{0.55}$ As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10$\text{}^{13}$-2×10$\text{}^{15}$ ions/cm$\text{}^{2}$ were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10$\text{}^{14}$ ions/cm$\text{}^{2}$. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 289-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Dłużewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964180.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
Silicon crystals implanted with 9 MeV protons to the dose of 5×10$\text{}^{17}$ cm$\text{}^{-2}$ were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Control of Radiation Sensitivity of the Oxygen-Containing Fluorite Crystals
Autorzy:
Kachan, S.
Salapak, V.
Nahurskiy, O.
Pirko, I.
Powiązania:
https://bibliotekanauki.pl/articles/1030896.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.47.-p
78.70.-g
Opis:
The parameters of radiation sensitivity of the oxygen-doped fluorite crystals were calculated in a one-dimensional model. The limit concentrations of the color centers as a function of the concentration of the oxygen impurity in the fluorite crystal were defined. Fluorite crystals with anti-Frenkel defects in the anion sublattice of the crystal have a specific property: the discolored after irradiation crystal being irradiated repeatedly with ionizing radiation retains the "memory" of the preceding irradiation. Using an ion chain model this paper studies under what conditions the "radiation memory" effect can arise in the MeF₂-O²¯ crystals as well as the extent of its contribution into the overall radiation sensitivity of the crystal.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 824-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time Decay of Stable Absorption of Gamma Irradiated LNO, LNO:Cu and YAP:Ce Crystals
Autorzy:
Potera, P.
Powiązania:
https://bibliotekanauki.pl/articles/1205403.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.40.-q
61.72.jn
Opis:
The present work is devoted to investigation of stability of stable color centers that are induced by gamma radiation in pure $LiNbO_{3}$, Cu-doped $LiNbO_{3}$ and Ce-doped $YAlO_{3}$ single crystals
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 774-776
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of annealing and irradiation by heavy ions on optical absorption of doped lithium niobate crystals
Autorzy:
Potera, P.
Stefaniuk, I.
Powiązania:
https://bibliotekanauki.pl/articles/1075585.pdf
Data publikacji:
2016-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Gh
61.80.-x
78.20.-e
Opis:
The present work is devoted to investigation of optical absorption changes in Fe and Cu doped LiNbO₃ (LNO) single crystals induced during annealing in vacuum and air as well as under influence of the ²⁰⁹Bi ions irradiation with energy 11.4 MeV/u (MeV per nucleon) and a fluence 5×10¹¹ cm¯² at room temperature. The analysis of changes of absorption of the crystal during air annealing have been studied in the Arrhenius coordinates and activation energies have been determined.
Źródło:
Acta Physica Polonica A; 2016, 130, 3; 800-804
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms
Autorzy:
Kamiński, P.
Kozłowski, R.
Żelazko, J.
Powiązania:
https://bibliotekanauki.pl/articles/1361219.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.80.-x
Opis:
High-resolution photoinduced transient spectroscopy has been applied to investigating the effect of the 1 MeV neutron fluence on the electronic properties of radiation defects in Czochralski grown silicon in magnetic field. A new approach to the analysis of the photocurrent relaxation waveforms as a function of time and temperature has been presented. It is based on using a two-dimensional numerical procedure with implementation of the inverse Laplace transformation for creating images of the sharp spectral fringes depicting the temperature dependences of the thermal emission rate for detected defect centers. In the material irradiated with the fluence of 3×$10^{14} cm^{-2}$, the dominant traps with activation energies of 75 meV and 545 meV are tentatively identified with an aggregate of three Si interstitials and the trivacancy, respectively. In the material irradiated with the fluence by the order of magnitude higher, the activation energies of the main traps are found to be 115, 350, 505, 545, and 590 meV. These traps are tentatively attributed to an aggregate of four Si interstitials, as well as to vacancy related centers such as $V_3$ (2-/-), $V_2O$ (-/0), $V_3$ (-/0) and $V_4$ (-/0), respectively.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 976-981
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radiation Defects in $CaF_2-CaO$ Crystals
Autorzy:
Kachan, S.
Obukhova, E.
Shtanko, V.
Chinkov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1550546.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.47.-p
78.70.-g
Opis:
The spectral and kinetic parameters of electron-pulse-initiated transient absorption of oxygen-doped $CaF_{2}$ crystals were studied using pulsed spectrometry with a nanosecond time resolution. It is shown that the formation of a $M_{A}^{+}$ color centers in $CaF_{2}$-0.01M%CaO crystals occurs by thermally activated diffusion of the vacancies. Activation energy of $M_{A}^{+}$ color centers formation process of 0.4 eV is established.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 195-198
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of $Xe^{+}$ Irradiation on Topography and Wettability of Graphite Surface
Autorzy:
Tashlykov, I.
Turavets, A.
Zhukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1503997.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.uf
61.80.-x
68.37.Ps
Opis:
The investigation of influence of $Xe^{+}$ ions irradiation of graphite on its surface topography and wettability was conducted. With the increase of the irradiation dose, the roughness average increases rapidly at first (when the sample was irradiated at the dose of 1 × $10^{14} cm^{-2}$) and then decreases slowly. The atomic force microscopy three-dimensional pictures showed that after irradiation of graphite of $Xe^{+}$ ions with a dose of 3 × $10^{15} cm^{-2}$ hemispherical grains (from 0.2 to 0.8 μm in diameter) appear on its surface. Surface water contact angle measurement showed that irradiation of graphite by $Xe^{+}$ ions leads to a hydrophobic surface of graphite. We have observed that irradiation of graphite by $Xe^{+}$ ions can be used for obtaining graphite surface with desirable topography and water wettability.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 115-117
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Spin-Lattice Relaxation in Polymers and Crystals Related to Disorder and Structure Defects
Autorzy:
Hoffmann, S. K.
Hilczer, W.
Radczyk, T.
Polus, I.
Powiązania:
https://bibliotekanauki.pl/articles/2035737.pdf
Data publikacji:
2003-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.41.+e
61.80.-x
76.30.-v
Opis:
Temperature dependences (4-300 K) of the electron spin-lattice relaxation have been determined by electron spin echo technique for free radicals in two polymeric systems: phenol-formaldehyde resin and polyhydrazodisulphide. The dependences are described in terms of dynamics specific for amorphous systems involving two-level tunnelling states at low temperatures, exchange-coupled clusters of paramagnetic centres and local oscillators. Some universal temperature behaviour of the spin-lattice relaxation of amorphous systems is suggested, with a strong increase in relaxation rate with temperature at low temperatures and much weaker increase above 50 K with characteristic linear temperature dependence in a broad temperature range and cosech(Δ/kT) -type behaviour. It is also shown that the amorphous-type behaviour appears in low temperatures relaxation studies of single crystals but it is due to a non-uniform distribution of doped paramagnetic ions. Such behaviour we have found in Tutton salt crystals doped with Cu$\text{}^{2+}$, as well as for free radical centres produced by ionising irradiation in (NH$\text{}_{4}$)$\text{}_{3}$H(SeO$\text{}_{4}$)$\text{}_{2}$ and Li(N$\text{}_{2}$H$\text{}_{5}$)SO$\text{}_{4}$ single crystals, where extended phonons are suppressed around radiation damage centres suggesting a local amorphisation of the crystal structure.zapisz i p
Źródło:
Acta Physica Polonica A; 2003, 103, 4; 373-385
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films
Autorzy:
Myroniuk, D.
Lashkarev, G.
Shtepliuk, I.
Lazorenko, V.
Maslyuk, V.
Timofeeva, I.
Romaniuk, A.
Strelchuk, V.
Kolomys, O.
Khomyak, V.
Powiązania:
https://bibliotekanauki.pl/articles/1399153.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.55.Et
71.55.Gs
Opis:
Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences $10^{16}$ and $2 \times 10^{16} cm^{-2}$. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 891-894
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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