Autor: Kowalski, G. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: X-Ray High-Resolution Diffraction and Transmission Topography Study of InGaAs Grown by Liquid Encapsulated Czochralski Technique
Autorzy:: Kowalski, G.
Gronkowski, J.
Borowski, J.
Hruban, A.
Powiązania:: https://bibliotekanauki.pl/articles/1812250.pdf
Data publikacji:: 2008-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Dd
07.85.Jy
81.10.Fq
Opis:: New results on ternary InGaAs crystals grown using liquid encapsulated Czochralski technique with constant liquid composition are reported. X-ray high-resolution diffractometry (rocking curves and reciprocal space maps) as well as X-ray topography using the transmission Lang setup were used. Growth history of the bulk ingots was revealed.
Źródło:: Acta Physica Polonica A; 2008, 114, 2; 391-398
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study
Autorzy:: Tokarczyk, M.
Kowalski, G.
Grodecki, K.
Urban, J.
Strupiński, W.
Powiązania:: https://bibliotekanauki.pl/articles/1399073.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.48.Gh
61.72.Dd
63.22.Rc
Opis:: Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as $d_{002}$ interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 768-771
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Superconductivity Study of GaN Highly Doped by Transition Metals
Autorzy:: Gosk, J.
Boćkowski, M.
Tokarczyk, M.
Kowalski, G.
Twardowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1399142.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.25.Ha
74.70.-b
74.25.Dw
75.50.-y
61.72.Dd
81.10.Dn
Opis:: GaN:Cr and GaN:Fe single crystals as well as GaN:Mn micropowders highly doped by transition metals were grown to investigate low temperature superconductivity. Magnetic measurements revealed type I superconductivity with $T_{C} ≈ 6 K$ and $H_{C} ≈ 600 Oe$, identical for all compounds and also identical to that observed before in GaP:Cr and GaAs:Cr. The presence of amorphous inclusions of gallium may explain existing superconductivity as a result of a phase transition leading to β-Ga during cooling down of the sample. Since the observed parameters are close to those characteristic for superconducting Ga(II) this possibility could not be ruled out.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 877-880
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Observation of Superconductivity in Highly Cr-Doped GaP Single Crystals
Autorzy:: Gosk, J. B.
Strzelecka, G.
Kowalski, G.
Hruban, A.
Kamińska, M.
Twardowski, A.
Gronkowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/2046913.pdf
Data publikacji:: 2006-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.10.+v
75.50.Pp
61.72.Vv
61.72.Dd
81.10.Dn
Opis:: Studying bulk GaP, highly doped with Cr, and searching for possible ferromagnetic semiconductor in view of spintronic applications, we found superconducting behavior of this material unexpectedly. Magnetization techniques and X-ray diffraction were applied to study these crystals. Magnetization revealed superconducting features up to about 6 K and X-ray studies showed that superconductivity might be related to small size Cr precipitates.
Źródło:: Acta Physica Polonica A; 2006, 110, 2; 189-193
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment
Autorzy:: Tokarczyk, M.
Kowalski, G.
Witowski, A.
Koziński, R.
Librant, K.
Aksienionek, M.
Lipińska, L
Ciepielewski, P.
Powiązania:: https://bibliotekanauki.pl/articles/1195411.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.48.Gh
61.72.Dd
63.22.Rc
Opis:: "Graphene paper" prepared by new proprietary method involving high pressure and high temperature treatment in the reduction process show new possibilities in this area. Different phase content: multilayer and single layer graphene stacks recorded in this study for RGO samples are accompanied by the specific electric and optical parameters. We have found that process temperatures above 900°C play crucial role in structural and other properties. For the process temperature around 2000°C we found the onset of the graphitization in the samples.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1190-1194
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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