Autor: Bak-Misiuk, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
Autorzy:: Bak-Misiuk, J.
Dynowska, E.
Romanowski, P.
Misiuk, A.
Sadowski, J.
Caliebe, W.
Powiązania:: https://bibliotekanauki.pl/articles/1431599.pdf
Data publikacji:: 2012-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
75.50.Pp
81.40.Vw
Opis:: Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Źródło:: Acta Physica Polonica A; 2012, 121, 4; 903-905
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
Autorzy:: Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Londos, C.
Andrianakis, A.
Bak-Misiuk, J.
Yang, D.
Surma, B.
Powiązania:: https://bibliotekanauki.pl/articles/1539028.pdf
Data publikacji:: 2010-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
61.72.-y
61.72.Ff
61.72.uf
62.50.-p
Opis:: Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
Źródło:: Acta Physica Polonica A; 2010, 117, 2; 344-347
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Defect Structure of High-Temperature-Grown GaMnSb/GaSb
Autorzy:: Romanowski, P.
Bak-Misiuk, J.
Dynowska, E.
Domagala, J.
Sadowski, J.
Wojciechowski, T.
Barcz, A.
Jakiela, R.
Caliebe, W.
Powiązania:: https://bibliotekanauki.pl/articles/1539009.pdf
Data publikacji:: 2010-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
68.37.Hk
68.49.Sf
68.55.ag
68.55.Ln
Opis:: GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of $Ga_{1-x}Mn_{x}Sb$ layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
Źródło:: Acta Physica Polonica A; 2010, 117, 2; 341-343
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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