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Wyszukujesz frazę "Porous Silicon" wg kryterium: Temat

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    Tytuł:
    Fabrication and Characterization of Porous Silicon
    Autorzy:
    Duaa, Jabbar Hussein
    Alzubaidy, Muneer H. Jaduaa
    Abd, Ahmed N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1157178.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Anodization
    Nanocrystalline porous silicon
    XRD
    porous silicon
    Opis:
    In this work, nanocrystalline porous silicon layers were fabricated by photoelectrochemical etching of n type silicon (n-Si) wafer. Different etching time (15, 20, 25 and 30) min and 10 mA/cm2 current density were tested to study their effect on the formation nanosized pore array. Porous silicon is investigation by X-Ray diffractions (XRD) and atomic force microscopy properties (AFM). Crystallites size was estimated by X-Ray diffraction. Atomic Force microscopy confirmed the nonmetric size Chemical Anodization the electrochemical etching was noticed of PS. The atomic force microscopy investigation showed the rough silicon surface which increased with etching time porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits.
    Źródło:
    World Scientific News; 2018, 94, 2; 321-328
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Porous silicon: fabrication, characterization and photoelectronic applications
    Autorzy:
    Shuihab, Aliyah A.
    Khalf, Surour A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1177955.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Anodization
    FTIR & AFM
    Nanocrystalline porous silicon
    XRD
    porosity
    porous silicon
    Opis:
    In this paper, the nanocrystalline porous silicon (PS) films are prepared by electrochemical etching of p-type silicon wafer with current density (15 mA/cm2) and etching times on the formation nanosized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nano scale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a -Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
    Źródło:
    World Scientific News; 2018, 97; 264-273
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photocurrent and Photovoltaic of Photodetector based on Porous Silicon
    Autorzy:
    Hadi, Hasan A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1178373.pdf
    Data publikacji:
    2017
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    ECE
    PC
    PDH
    Photovoltaic
    Porous Silicon
    Opis:
    We have studied the dependence of photodetector photocurrent on incident power density of light with anodization current and time. The fabrication of Al/PS/p-Si photodetector heterojunction PDH by electrochemical etching method ECE and semi-transparent Al films in thickness range of 80 nm are deposited by thermal evaporation on porous silicon layers to investigate the photocurrent -voltage characteristics of the PDH. When the anodization current varied from 20 to 60 mA, the photocurrent PC was increase according to the anodization parameters at 1.2 mw/cm2 power density. The results also show that the short current Isc and open circuit voltage Voc saturate at high power density. The difference in the value of Voc and Isc at different etching current density is related to the Si nano crystallites layer thickness and the porosity which itself is greatly affected by the etching current density.
    Źródło:
    World Scientific News; 2017, 77, 2; 314-325
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An Effect Etching Time on Structure Properties of Nano-Crystalline p-type Silicon
    Autorzy:
    Hadi, H. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/412165.pdf
    Data publikacji:
    2014
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Porous Silicon
    Electrochemical Etching
    ECE
    XRD
    AFM
    Opis:
    This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2014, 17, 3; 327-333
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Impact of the etching time and current density on Capacitance-Voltage characteristics of P-type of porous silicon
    Autorzy:
    Hadi, Hasan A.
    Abood, Tareq H.
    Mohi, Ali T.
    Karim, Mahmood S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1178661.pdf
    Data publikacji:
    2017
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    electrochemical etching
    heterojunction
    porous silicon
    thin films
    Opis:
    In This paper, electrochemical etching teqniques was using to formation of nano crystalline porous silicon layer on p-type Si substrates. Measurement of capacitance – voltage characteristics at various etching time and current densities were used for calculated built in voltage and type of heterojunction. The built in voltage values were decreased with increasing etching time and current densities for both anisotype Al/PS/p-Si/Al heterojunction. These characteristics are interpreted by assuming the abrupt heterojunction model. The effect of different etching time and current densities on electrical properties of PS have been investigated.
    Źródło:
    World Scientific News; 2017, 67, 2; 149-160
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier modification of Al/PS/c-Si Schottky contact based on porous silicon interfacial layer
    Autorzy:
    Hadi, Hasan A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1178052.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Norde method
    Porous silicon
    Schottky barrier height
    electrochemical etching
    Opis:
    This paper presents the fabrication and characterization of the different types of porous silicon PS (n-type and p-type) were used as a semiconductor to modifying Schottky contacts (Al/p-PS, Al/n-PS) and ohmic contact (Al/p-Si, Al/n-Si) respectively. Porous layer formed by electrochemical and photo-electrochemical etching. Barrier height, ideal factor, series resistance, are carefully figured out and compared with (I-V, C-V) measurements, H(I) and F(V) equations. The ideally factor was very high and the value of the Schottky barrier height of p-type sample was larger than that of n-type for all methods were use in this study. Also, higher series resistance for Al/PS/p-Si Schottky diode as compared to Al/PS/n-Si Schottky diode while the junction exhibits strong rectifying characteristics for n-type as compared of p-type.
    Źródło:
    World Scientific News; 2018, 95; 89-99
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and characterization of porous silicon layer prepared by photo-electrochemical etching in CH3OH:HF solution
    Autorzy:
    Hadi, H.A.
    Ismail, R.A.
    Habubi, N.F.
    Powiązania:
    https://bibliotekanauki.pl/articles/412262.pdf
    Data publikacji:
    2013
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    porous silicon
    photo-electrochemical etching (PECE)
    porosity
    thickness
    XRD
    AFM
    Opis:
    Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer's formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77 %. The thickness of the layer formed during an anodization in constant current was 3.54nm in gravimetric method, while its value was 1.77nm by using the theoretical relation.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2013, 3; 29-36
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical model to determine the Porosity and refractive index of porous silicon type-n by using Atomic force microscope
    Autorzy:
    Abdulridha, Wasna'a M.
    Abd, Ahmed N.
    Dawood, Mohammed O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1193012.pdf
    Data publikacji:
    2016
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Atomic Force Microscope
    Porous silicon
    n-PS
    porosity
    refractive index
    thickness
    Opis:
    Porous silicon (PS) layer was produced by photochemical etching process at (5, 7, 10, 12 and 15) etching time and 7 mA/cm2 current density then after investigation by Atomic Force Microscope (AFM) the thickness of PS layer from about 3.4 µm to 15.8 µm was determined. The surface of porous silicon is formed from small pyramids with porous structure, where the porosity of n-PS is from ≈ (32-72%). Porous silicon layer formed on the silicon substrates by photochemical etching contains also the nanopores with diameter about (16.41-42) nm in current density (7mA/cm2). The porosity and thickness was determined from AFM results and compared with the result from the usually measured porosity and thickness through a gravimetric method we found that the values of porosity and thickness calculated from two methods are approximately similar to each other with few difference, the influence of structure changes on optical properties such as refractive index, which decreases exponentially with porosity.
    Źródło:
    World Scientific News; 2016, 28; 29-40
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Metal-titanium oxide / quantum dot porous silicon / silicon-metal solar cell
    Autorzy:
    Abd, Ahmad Naji
    Mishjil, Khudheir A.
    Abdulsada, Ali Hamid
    Habubi, N. F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1177996.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    AFM
    FTIR
    TiO2
    X-Ray diffraction
    XRD
    electrochemical etching p-type silicon wafer
    nanocrystalline porous silicon
    Opis:
    In this paper, the nanocrystalline porous silicon (PSi) films are prepared by electrochemical etching of p-type silicon wafer with current density 7 mA/cm2 and etching times on the formation nano-sized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
    Źródło:
    World Scientific News; 2018, 96; 134-148
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Optoelectronic properties of Fluoride tin oxides/porous silicon/p-Silicon heterojunction
    Autorzy:
    Hadi, H. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/411926.pdf
    Data publikacji:
    2014
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    porous silicon
    electrochemical etching
    spray pyrolysis
    fluoride-doped tin oxide film
    nanostructures
    SEM
    AFM
    photodetector
    Opis:
    In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO2 : F for film was deduced. From (I-V) and (C-V) measurements, the barrier ØB height for FTO/PS diode was of 0.77, and the built in voltage Vbi, which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2014, 17, 2; 142-152
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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