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Wyświetlanie 1-15 z 62
Tytuł:
Deep Levels in Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te:Ga
Autorzy:
Szatkowski, J.
Płaczek-Popko, E.
Sierański, K.
Bieg, B.
Powiązania:
https://bibliotekanauki.pl/articles/1992339.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
71.55.Gs
Opis:
Two types of samples were studied. In the material with higher donor concentration four electron traps labelled by us as E1 to E4 were found. For the traps E2 and E3 energies obtained from Arrhenius plots are equal to 0.24 eV and 0.36 eV, respectively. Electric field enhanced electron emission from the levels E1 and E4 was observed and described in terms of Frenkel-Poole mechanism. Capture process from the traps E2 was found to be thermally activated with energetic barriers equal to 0.20 eV for E2.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 575-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ionization Energies of RE Ions in wide Bandgap Sulphides
Autorzy:
Świątek, K.
Godlewskl, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879958.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.55.Et
Opis:
An analysis of rare earth (RE) energy level positions in wide bandgap sulphides is presented. It is shown that the Jörgensen's refined spin-pairing energy theory (RESPET) predicts correctly the photo-ionization (PI) energy of Sm in ZnS.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 247-250
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron DX State in CdTe:In
Autorzy:
Skierbiszewski, C.
Wiśniewski, P.
Litwin-Staszewska, E.
Suski, T.
Wilamowski, Z.
Zakrzewski, A. K.
Karczewski, G.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1952096.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
73.61.Ga
Opis:
In this paper we investigate electron emission/capture from/to the DX state of indium in CdTe by means of high pressure freeze-out cycle and steady-state photo-conductivity experiments. The results indicate that the DX state is occupied by two electrons. A comparison with deep level transient spectroscopy data shows that two-electron emission occurs at low temperatures, while one-electron emission takes place at high temperatures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 927-930
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Level Position of Ni and Band Offsets in Zn$\text{}_{1-x}$Cd$\text{}_{x}$Sc:Ni and ZnS$\text{}_{x}$Sc$\text{}_{1-x}$:Ni
Autorzy:
Surkova, T.
Giriat, W.
Godlewski, M.
Kaczor, P.
Zakrzewski, A. J.
Permogorov, S.
Tenishev, L.
Powiązania:
https://bibliotekanauki.pl/articles/1934015.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Wc
71.55.Gs
Opis:
Absorption and reflectivity measurements have been carried out for Zn$\text{}_{1-x}$Cd$\text{}_{x}$Se:Ni and ZnS$\text{}_{x}$Se$\text{}_{1-x}$:Ni solid solutions. Energy level positions of nickel 2+/1+ charge state have been used for estimation of band offsets for the valence and conduction bands of ZnCdSe/ZnSe and ZnSSe/ZnSe. Intra-shell transitions of Ni$\text{}^{2+}$ were also studied.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 925-928
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatial Correlations of Donor Charges in MBE CdTe
Autorzy:
Suski, T.
Wiśniewski, P.
Litwin-Staszewska, E.
Wasik, D.
Przybytek, J.
Baj, M.
Karczewski, G.
Wojtowicz, T.
Zakrzewski, A.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934021.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
71.55.Gs
Opis:
We present experimental evidence that at high pressures indium donors in CdTe localize electrons in spatially correlated manner. We have studied Hall mobility, μ$\text{}_{H}$, as a function of electron concentration, n$\text{}_{H}$, at T=77 K. Changes of n$\text{}_{H}$ have been achieved by two methods. High pressure freeze-out of electrons onto localized states of In-donors leads to the mobility enhancement with respect to the situation when n$\text{}_{H}$ has been modified by means of a subsequent annealing of the sample. As a result, depending on the degree of spatial correlations in the impurity charges arrangement, different values of μ$\text{}_{H}$ correspond to the same value of n$\text{}_{H}$. The variation of mobility with electron concentration suggests that the localized state of In-donor represents likely negatively charged DX state.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 929-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Strain in II-VI Semiconductor Superlattices Using Electron Paramagnetic Resonance of Mn$\text{}^{++}$
Autorzy:
Furdyna, J. K.
Qazzaz, M.
Yang, G.
Montes, L.
Xin, S. H.
Luo, H.
Powiązania:
https://bibliotekanauki.pl/articles/1933687.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
71.55.Gs
Opis:
We explore the possibility of using electron paramagnetic resonance (EPR) of Mn$\text{}^{++}$ for measuring uniaxial strain in II-VI superlattices. This work is motivated by the fact that the EPR spectrum of Mn$\text{}^{++}$ is very strongly affected by crystalline fields. Changes in a crystalline field which arise from strain are thus automatically expected to have a profound effect on the EPR spectrum. Consistent with this expectation, we have observed giant crystal field splittings of Mn$\text{}^{++}$ EPR lines in ZnTe/MnTe, CdTe/MnTe, and ZnTe/MnSe superlattices. The EPR spectra observed in these systems are ascribed to isolated Mn$\text{}^{++}$ ions diffused into the ZnTe or the CdTe layers from the respective MnTe or MnSe layers. In addition to providing precise information oii the magnitude and the sign of strain produced by lattice mismatch between the superlattice constituents, we show that the EPR spectrum also provides a direct measure of strain fluctuations in the layered medium.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 607-618
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hopping Conductivity in (Zn,Fe)Se Intentionally Doped with Ag
Autorzy:
Zaręba, A.
Demianiuk, M.
Powiązania:
https://bibliotekanauki.pl/articles/1921698.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.80.Ey
Opis:
The transport phenomena in (Zn,Fe)Se were studied. In order to obtain iron centers in Fe$\text{}^{3+}$ charge state the crystals were doped by Ag what produces acceptors compensating Fe$\text{}^{2+}$ donors. The results are explained in terms of thermally activated jumping of charges between Fe$\text{}^{3+}$ and Fe$\text{}^{2+}$ centers. The nature of activation energy is discussed. The polaron model seems to be not valid in our case. The Coulomb interaction between charged acceptors and "holes" on iron centers is considered as the origin of thermal activation of jumps. We suggest the deviation from random and mutually independent distributions of charged Ag acceptors and Fe$\text{}^{3+}$ ions resulting from the electrostatic interactions between them at high temperatures.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 749-752
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of Wide-Gap $Cd_{1-x}Zn_{x}Se$ Ternary Alloys by Using Electron Beam Evaporation Technique
Autorzy:
Suthagar, J.
Rajesh, S.
Perumal, K.
Balasubramaniam, T.
Suthan Kissinger, N.
Powiązania:
https://bibliotekanauki.pl/articles/1538742.pdf
Data publikacji:
2010-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
61.05.cp
Opis:
$Cd_{1-x}Zn_{x}Se$ films with different zinc content were deposited by electron beam evaporation technique onto glass substrates for the application of solid-state photovoltaic devices. The structural, surface morphological and optical properties of $Cd_{1-x}Zn_{x}Se$ films have been studied in the present work. The host material, $Cd_{1-x}Zn_{x}Se$, has been prepared by the physical vapor deposition method of electron beam evaporation technique under the pressure of 1 × $10^{-5}$ mbar. The X-ray diffractogram indicates that these alloy films are polycrystalline in nature, of hexagonal structure with strong preferential orientation of the crystallites along (002) direction. Linear variation of lattice constant with composition (x) is observed. Surface roughness measured by atomic force microscopy is used to estimate the interface roughness. The optical properties show that the band gap $(E_{g})$ values vary from 2.08 to 2.64 eV as zinc content varies from 0.2 to 0.8. The surface morphological studies show the very small, fine and hardly distinguishable grains smeared all over the surface. The material properties would be altered and excellently controlled by adiusting the system composition x.
Źródło:
Acta Physica Polonica A; 2010, 117, 3; 506-511
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence of Co-Doped ZnCdSe and ZnSSe Alloys
Autorzy:
Surkova, T. P.
Born, H.
Thurian, P.
Hoffmann, A.
Busse, W.
Gumlich, H.-E.
Broser, I.
Giriat, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968428.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.20.Wc
Opis:
Photoluminescence measurements have been carried out for Zn$\text{}_{1-x}$ Cd$\text{}_{x}$ Se:Co and ZnS$\text{}_{x}$Se$\text{}_{1-x}$:Co mixed crystals. Changes of recombination channels are observed in mixed crystals as compared to the emission of host binary compounds. Character of changes is slightly different for the alloys with cation and anion substitution. Photoluminescence kinetics of the L-line and of two other Co$\text{}^{2+}$ intra-shell emission bands was measured to determine radiative decay rates.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1013-1016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transition Metal Impurities and Electronic Structure of ZnSe-Based Isovalent Semiconductor Alloys
Autorzy:
Surkova, T. P.
Giriat, W.
Godlewski, M.
Permogorov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1968432.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Wc
71.55.Gs
Opis:
Energy level positions of the nickel 2+/1+ and cobalt 2+/3+ charge states have been used to estimate band edges for the valence and conduction bands of ZnSe-based alloys with cation (ZnCdSe) and anion (ZnSSe) substitution. Chemical trends in band offsets of heterostructures of Zn- or Mn-based II-VI compounds are analysed. Further on, the change of Ni$\text{}^{2+}$(3d$\text{}^{8}$) and Co$\text{}^{2+}$(3d$\text{}^{7}$) intra-d shell transition bands upon the alloying of host material is discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1009-1012
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated and Laser Emission in CdZnTe/CdMnTe Double Quantum Well Heterostructures
Autorzy:
Kowalczyk, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933829.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
71.55.Gs
Opis:
Stimulated emission by optical excitation has been investigated in CdZnTe/CdMnTe quantum well heterostructures. Laser action has been achieved at 4.2 K and at 77 K with relatively low threshold values of the excitation intensity. Photοluminescence excitation spectra of the stimulated emission were obtained indicating that the optical gain involves exciton-exciton inelastic scattering.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 787-790
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Study of MBE CdMnTe Doped with Bromine
Autorzy:
Szczytko, J.
Wasik, D.
Przybytek, J.
Baj, M.
Waag, A.
Powiązania:
https://bibliotekanauki.pl/articles/1934026.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
73.61.Ga
Opis:
We present Hall effect and resistivity measurements as a function of pressure performed on MBE-grown Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te (with x = 0.14) layer (1 μm) doped with bromine. The experimental data were analysed using positive and negative U model of the Br centres. We found that both models could reproduce the experimental points, but in the case of positive U model - only under assumption that the sample was completely uncompensated.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 933-936
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoneutralization of the Fe$\text{}^{3+}$ Centers in the ZnSe Crystals Heavily Doped with Iron
Autorzy:
Lubomirska-Wittlin, A.
Szadkowski, A. J.
Demianiuk, M.
Powiązania:
https://bibliotekanauki.pl/articles/1886786.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
71.55.Gs
Opis:
Photoconductivity and optical quenching of the photoconductivity were measured. The photoneutralization of the Fe$\text{}^{3+}$ centres has been found to occur for photon energies down to 0.8 eV (i.e. the threshold can not be at 1.1 eV, as often quoted). The conclusion from our previous paper that the lattice relaxation energy is small, has been confirmed. It has to be smaller than 0.1 eV.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 337-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Doping and Characterization of Wide-Gap II-VI Epilayers
Autorzy:
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1946648.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.-i
71.55.Gs
Opis:
In this paper we review the properties of n-type doped ZnSe and CdTe epilayers grown by molecular beam epitaxy on (100) GaAs substrates. Recent results of photoluminescence, transport measurements, secondary ion mass spectroscopy and deep-level transient spectroscopy are discussed. A major emphasis is placed on the effect of different dopant species and the role of the deviation from stoichiometry on the doped epitaxial layers. Since deep defect states play an important role in determining the properties of the doped materials, considerable attention is directed towards characterization and identification of deep-lying defect states, both native and introduced by dopants. In particular, in the case of ZnSe the deep-level transient spectroscopy results clarify why Cl is superior to Ga as an effective n-type dopant. They provide strong evidence that chlorine - unlike Ga - does not introduce by itself any detectable deep defects into the ZnSe lattice. In the case of CdTe, we focus on the influence of the deviation from stoichiometric growth conditions in the molecular beam epitaxy process and on the properties of In doped layers. We discuss resistivity, Mn diffusivity and the presence of various deep defects in layers grown at different Cd/Te flux ratios.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 635-644
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Nature of Eu-Related Emissions in ZnS and CaS
Autorzy:
Świątek, K.
Godlewski, M.
Niinistö, L.
Leskelä, M.
Powiązania:
https://bibliotekanauki.pl/articles/1879960.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
71.35.+z
78.55.Et
Opis:
The Eu-connected recombination processes in ZnS and CaS are analyzed on the basis of optical studies. A new Eu-related emission in ZnS is attributed to the recombination of an exciton bound at the Eu$\text{}^{2+}$ center, while in CaS the emission is dominated by the direct Eu$\text{}^{2+}$ intra-ion transition.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 255-257
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 62

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