Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Zhou, M." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-6 z 6
    Tytuł:
    Comparison of Flux Pinning in Single Crystals and Melt-Textured YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$
    Autorzy:
    Puźniak, R.
    Wiśniewski, A.
    Baran, M.
    Zhou, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2012973.pdf
    Data publikacji:
    2000-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.60.Ge
    74.60.Jg
    74.72.Bk
    Opis:
    Flux pinning properties of single crystals and melt-textured samples of YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ were studied for external magnetic field oriented parallel and perpendicular to the CuO$\text{}_{2}$ planes (ab-planes). For H ∥ ab vortex behaviour is mainly determined by a very effective intrinsic pinning mechanism. The irreversibility line is located in the region of higher fields and temperatures in comparison with the irreversibility line for H ⊥ ab. In a single crystal for H ⊥ ab, we observed an increase in the critical current density j$\text{}_{c}$ with magnetic field - the so-called "fishtail effect" - in a very broad temperature range. For H ∥ ab, this effect is observed only at temperatures close to T$\text{}_{c}$, when the intrinsic pinning is much weaker.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 3; 373-376
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Embedded Solitons and Conservation Law with $χ^{(2)}$ and $χ^{(3)}$ Nonlinear Susceptibilities
    Autorzy:
    Savescu, M.
    Kara, A.
    Kumar, S.
    Krishnan, E.
    Zaka Ullah, M.
    Moshokoa, S.
    Zhou, Qin
    Biswas, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398312.pdf
    Data publikacji:
    2017-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    solitons
    χ^{(2)}
    conservation laws
    Opis:
    This paper studies embedded solitons that are confined to continuous spectrum, with $χ^{(2)}$ and $χ^{(3)}$ nonlinear susceptibilities. Bright and singular soliton solutions are obtained by the method of undetermined coefficients. Subsequently, the Lie symmetry analysis and mapping method retrieves additional solutions to the model such as shock waves, singular solitons, cnoidal waves, and several others. Finally, a conservation law for this model is secured through the Lie symmetry analysis.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 2; 297-303
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
    Autorzy:
    Prucnal, S.
    Turek, M.
    Gao, K.
    Zhou, S.
    Pyszniak, K.
    Droździel, A.
    Żuk, J.
    Skorupa, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400484.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.Hc
    81.05.Ea
    81.07.Ta
    81.15.Lm
    Opis:
    Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 935-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer
    Autorzy:
    Prucnal, S.
    Jiao, F.
    Reichel, D.
    Zhao, K.
    Cornelius, S.
    Turek, M.
    Pyszniak, K.
    Drozdziel, A.
    Skorupa, W.
    Helm, M.
    Zhou, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1199248.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jn
    61.72.Cc
    78.55.Hx
    Opis:
    Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1404-1407
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
    Autorzy:
    Wang, H. Y.
    Weng, H. M.
    Ling, C. C.
    Ye, B. J.
    Zhou, X. Y.
    Han, R. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043365.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    68.35.Ct
    73.40.Sx
    Opis:
    Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 874-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Charge Carrier Dynamics in $Ga_{1-x}Mn_{x}As$ Studied by Resistance Noise Spectroscopy
    Autorzy:
    Lonsky, M.
    Teschabai-Oglu, J.
    Pierz, K.
    Sievers, S.
    Schumacher, H.
    Yuan, Y.
    Böttger, R.
    Zhou, S.
    Müller, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1397018.pdf
    Data publikacji:
    2018-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    73.50.Td
    73.50.-h
    73.61.-r
    64.60.ah
    61.72.-y
    Opis:
    We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 3; 520-522
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies