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    Wyświetlanie 1-9 z 9
    Tytuł:
    Growth and Characterization of Vanadate Laser Crystals
    Autorzy:
    Yu, H.
    Zhang, H.
    Wang, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399465.pdf
    Data publikacji:
    2013-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Fq
    42.55.Px
    Opis:
    Based on the invention and widely application of the Czochralski pulling method, vanadate crystals have been grown and commercialized in recent decades. In this paper, the growth and characterization of a series of neodymium doped vanadate crystals have been reviewed, including $Nd:YVO_4$, $Nd:GdVO_4$, and $Nd:LuVO_4$. The excellent thermal-mechanical and laser property make them to be used in many respects.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 2; 301-304
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Exchange Bias in Ni-Mn-Sn Heusler Alloy Films
    Autorzy:
    Gościańska, I.
    Załęski, K.
    Głowiński, H.
    Kudryavtsev, Yu.
    Dubowik, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1427549.pdf
    Data publikacji:
    2012-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.Ak
    75.30.Et
    Opis:
    We report a relatively large exchange bias effect observed for the first time in Ni-Mn-Sn thin films with different microstructure and composition: a $Ni_{50}Mn_{36}Sn_{14}$ epitaxial film (A), a $Ni_{50}Mn_{43}Sn_7$ film which is phase decomposed (B), and a $NiMn//Ni_{50}Mn_{25}Sn_{25}$ bilayer (C). Despite the samples differ markedly in both microstructure and composition $H_{EB}$ does not substantially differs at 5 K. Exchange bias decreases with increasing T approximately as $H_{EB}$ (T) ∝ $H_{EB}$ (5K)/T with $H_{EB}$ (5K) of 180 Oe and 60 Oe for sample B and C, respectively and almost linearly for sample A with $H_{EB}$ (5K) = 65 Oe. Blocking temperature where the exchange bias vanishes is 40, 50 and 80 K for sample A, C and B, respectively. The results suggest that the role of AFM/FM interfaces is not substantial in formation of exchange bias in Ni-Mn-Sn Heusler alloy films and exchange bias is rather related to AFM/FM interactions in nanoscale.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 5-6; 1179-1181
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Advanced Characterization of Material Properties on the Nanometer Scale Using Atomic Force Microscopy
    Autorzy:
    Fenner, M.
    Wu, S.
    Yu, J.
    Huber, H.
    Kienberger, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1490089.pdf
    Data publikacji:
    2012-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.-g
    07.79.-v
    68.37.Ps
    68.37.Uv
    07.57.Pt
    Opis:
    We report recent advances in material characterization on the nanometer scale using scanning microwave microscopy. This combines atomic force microscopy and a vector network analyzer using microwave tip sample interaction to characterize dielectric and electronic material properties on the nanometer scale. We present the methods for calibration as well as applications. Scanning microwave microscopy features calibrated measurements of: (1) capacitance with attofarad sensitivity. For calibration a well characterized array of capacitors (0.1 fF to 10 fF) is used. The method is applied to determine the dielectric properties of thin organic films, (2) Semiconductor dopant density. Calibration is performed by imaging the cross-section of a standard sample with differently doped layers (dopant stair case) from $10^{16}$ atoms/$cm^3$ to $10^{20}$ atoms/$cm^3$.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 2; 416-419
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Transport and Magnetic Properties of La$\text{}_{2}\text{}_{/}\text{}_{3}$ Pb$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ Thin Films
    Autorzy:
    Baran, M.
    Berkowski, M.
    Fink-Finowicki, J.
    Lewandowski, S. J.
    Szymczak, H.
    Szymczak, R.
    Khartchev, S. I.
    Medvedev, Yu. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2037109.pdf
    Data publikacji:
    2004
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.-m
    72.15.Gd
    75.70.Pa
    Opis:
    The magnetic and transport properties of epitaxial La$\text{}_{2}\text{}_{/}\text{}_{3}$ Pb$\text{}_{1}\text{}_{/}\text{}_{3}$ CuO$\text{}_{3}$ thin films deposited on SrLaGaO$\text{}_{4}$ substrate using dc magnetron sputtering technique are reported. The giant magnetoresistance effect (of about 50% at magnetic field of 1 T) was observed near the Curie temperature. Several mechanisms responsible for temperature dependence of resistivity are discussed. The effect of annealing was studied. It shifted the Curie temperature to the lower value, probably, because of the loss of oxygen.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 1-2; 115-120
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant State of 4f$\text{}^{14}\text{}^{/}\text{}^{13}$ Yb Ion in Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te
    Autorzy:
    Grodzicka, E.
    Dobrowolski, W.
    Story, T.
    Slynko, E. T.
    Vygranenko, Yu.K.
    Willekens, M. M. H.
    Swagten, H. J. M.
    de Jonge, W. J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950801.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Ht
    75.20.Ck
    Opis:
    The study of transport and of magnetic properties of Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te:Yb mixed crystals (0 ≤ x ≤ 0.04) is reported. It is shown that Yb forms a donor state resonant with the PbTe valence band. The donor state position may be tuned (shifted relative to the energy gap) by admixture of Ge. The properties of the Yb ion in the Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te matrix makes the system unique from the point of view of magnetic properties. It is demonstrated that the change of the conductivity type from p to n induces transitions from the paramagnetic state to the diamagnetic one.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 801-804
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Anisotropy in Eus-pbs Multilayers
    Autorzy:
    Story, T.
    Swüste, C. H. W.
    Swagten, H. J. M.
    de Jonge, W. J. M.
    Stachow-Wójcik, A.
    Twardowski, A.
    Arciszewska, M.
    Dobrowolski, W.
    Gałązka, R. R.
    Sipatov, A. Yu.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013042.pdf
    Data publikacji:
    2000-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    75.70.Ak
    Opis:
    We present the results of ferromagnetic resonance studies of the thickness dependence of magnetic anisotropy in 2 series of EuS-PbS multilayers grown on (111) BaF$\text{}_{2}$ and (100) KCl substrates with the EuS thickness varying in the range d=6-70 Å. The anisotropy constant K was found to follow the dependence K(d)=K$\text{}_{V}$+2K$\text{}_{S}$/d , with the surface term K$\text{}_{S}$ larger for layers grown on BaF$\text{}_{2}$ as compared to KCl. This difference is discussed in terms of different thermal stress-induced distortions of cubic crystal lattice of EuS. We found that the thickness of EuS layer required for the perpendicular (to the layer) magnetization is d ≤ 2-3 Å, i.e., it is below 1 monolayer.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 3; 435-438
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temperature Dependence of Antiferromagnetic Interlayer Exchange Coupling in EuS-PbS Multilayers
    Autorzy:
    Chernyshova, M.
    Kowalczyk, L.
    Baran, M.
    Szczerbakow, A.
    Story, T.
    Smits, C. J. P.
    Filip, A. T.
    Swagten, H. J. M.
    de Jonge, W. J. M.
    Sipatov, A. Yu.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038129.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.20.Ck
    75.30.Et
    Opis:
    Antiferromagnetic interlayer exchange coupling in semiconductor EuS-PbS-EuS ferromagnetic trilayers grown on PbS (001) substrates with ultrathin (0.6-1.2 nm) nonmagnetic PbS spacers is studied by SQUID magnetometry and model calculations. Analysis of the experimentally observed magnetic field and temperature dependence of the magnetization of EuS-PbS structures reveals a rapid decrease in the interlayer coupling energy with increasing temperature indicating a temperature dependence of the microscopic coupling mechanism acting in these all-semiconductor ferromagnetic/nonmagnetic multilayers.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 599-605
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic and Structural Properties of EuS-PbS Multilayers Grown on n-PbS (100) Substrates
    Autorzy:
    Chernyshova, M.
    Łusakowska, E.
    Domukhovski, V.
    Grasza, K.
    Szczerbakow, A.
    Wrotek, S.
    Kowalczyk, L.
    Story, T.
    Smits, C. J. P.
    Swagten, H. J. M.
    De Jonge, W. J. M.
    Palosz, W.
    Sipatov, A. Yu.
    Volobuev, V. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035589.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.20.Ck
    75.30.Et
    Opis:
    Magnetic properties of semiconductor EuS(t)-PbS(d)-EuS(t) ferromagnetic trilayers (t=30÷300Å and d=7.5÷70Å) grown on n-type monocrystalline PbS (100) substrate were studied by SQUID magnetometry and ferromagnetic resonance technique yielding, in particular, the dependence of the ferromagnetic Curie temperature on the thickness of the EuS layer. Structural parameters of layers were examined by X-ray powder diffraction analysis. A high structural quality of the substrate and the multilayer was verified by the measurements of the X-ray rocking curve width indicating the values of the order of 100 arcsec and by atomic force microscopy revealing the presence on the cleft PbS surface regions practically flat in the atomic scale over the area of 1×0.1μm$\text{}^{2}$.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 609-615
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Scanning Tunneling Spectroscopy Study of Surface States of 3d Metals: Chemical Identification, Magnetic Contrast and Orbital Kondo Resonance States
    Autorzy:
    Bischoff, M. M. J.
    Fang, C. M.
    de Groot, R. A.
    Heijnen, G. M. M.
    Katsnelson, M. I.
    Kolesnychenko, O. Yu.
    de Kort, R.
    Lichtenstein, A. I.
    Quinn, A. J.
    Vasquez de Parma, A. L.
    Yamada, T. K.
    van Kempen, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036891.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.-r
    68.37.-d
    75.70.-i
    Opis:
    The surface states of 3d transition metals are studied by scanning tunneling microscopy and scanning tunneling spectroscopy. The results show that surface states can be used for chemical identification with high spatial resolution. The spin polarized nature of the surface states allows us to obtain magnetic contrast in scanning tunneling miroscopy imaging with near atomic resolution. For Cr(100) we found that the surface state close to the Fermi level can be explained by an orbital Kondo resonance surface state.
    Źródło:
    Acta Physica Polonica A; 2003, 104, 3-4; 231-243
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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