Autor: Yang, D. D. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300 mm Czochralski Silicon Wafer
Autorzy:: Dong, P.
Ma, X.
Yang, D.
Powiązania:: https://bibliotekanauki.pl/articles/1361181.pdf
Data publikacji:: 2014-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Ji
61.72.Qq
61.72.Yx
61.72.Cc
Opis:: The behaviors of copper (Cu) precipitation along the radial direction of the 300 mm Czochralski grown silicon wafer have been investigated. It is found that the density of Cu precipitates decreases from the center to edge of the silicon wafer. Moreover, it is revealed that the density of grown-in oxygen precipitates also decreases along the radial direction as mentioned above. Therefore, it is apparent that the Cu precipitate density is positively correlative to the grown-in oxygen precipitate density. This is due to that the grown-in oxygen precipitates can serve as the heterogeneous nucleation centers for Cu precipitation. It is suggested that the Cu decoration in combination with preferential etching can be used to indirectly evaluate the radial distribution of grown-in oxygen precipitates in the silicon wafers.
Źródło:: Acta Physica Polonica A; 2014, 125, 4; 972-975
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Investigations of the Optical Band Positions and Spin-Hamiltonian Parameters for the Rhombic $VO^{2+}$ Complex in CsCl Crystal
Autorzy:: Fang, W.
Zheng, W.
Yang, D.
Tang, H.
Powiązania:: https://bibliotekanauki.pl/articles/1365269.pdf
Data publikacji:: 2014-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.70.Ch
75.10.Dg
61.72.Bb
76.30.Fc
Opis:: The optical band positions and spin-Hamiltonian parameters (g factors $g_{i}$ and hyperfine structure constants $A_{i}$, where i=x, y, z) of the rhombic $VO^{2+}$ complex in CsCl crystal are calculated together from two theoretical methods. One is the complete diagonalization (of energy matrix) method and another is the perturbation theory method. The calculated results from the two methods coincide and are in reasonable agreement with the experimental values. So, both methods are effective in the explanations of optical and electron paramagnetic resonance (EPR) data for $d^1$ ions in crystals. The calculations also suggest that in $d^1$ rhombic octahedra the ground state is almost a pure | $d_{xy}$ ⟩ state. This point is different from that of conjugate $d^9$ (e.g., $Cu^{2+}$) ions in rhombic octahedra where the ground state should be an admixture of ground and first excited states.
Źródło:: Acta Physica Polonica A; 2014, 125, 5; 1206-1209
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
Autorzy:: Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Londos, C.
Andrianakis, A.
Bak-Misiuk, J.
Yang, D.
Surma, B.
Powiązania:: https://bibliotekanauki.pl/articles/1539028.pdf
Data publikacji:: 2010-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cp
61.72.-y
61.72.Ff
61.72.uf
62.50.-p
Opis:: Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
Źródło:: Acta Physica Polonica A; 2010, 117, 2; 344-347
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Experimental Studies on Charging Operation of a Compact Repetitive Tesla Transformer
Autorzy:: Zhang, Z.
Zhang, J.
Yang, H.
Qian, B.
Meng, Z.
Li, D.
Wang, S.
Cao, Y.
Zhou, W.
Powiązania:: https://bibliotekanauki.pl/articles/1807860.pdf
Data publikacji:: 2009-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.30.Ng
84.30.Jc
84.30.Qi
84.70.+p
Opis:: Charging operations of a compact Tesla transformer were experimentally investigated, in single-shot and rep-rate (50 pps for 1 s) modes, respectively. The charging limitations were also explored. The experimental results were compared and analyzed. The maximum secondary charging voltages of the Tesla transformer were measured to be 380 kV and 300 kV in single-shot and rep-rate modes, respectively. The RMS pulse-to-pulse instability of the secondary charging voltage is generally less than 10% but increases with the increasing initial voltage across the primary capacitor. Since the secondary capacitor of the Tesla transformer is a pulse forming line (PFL), continued operation is possible if there is breakdown in the PFL. Furthermore, operation can even be continued under occasional breakdown for some pulses, without the effects on the operations of subsequent pulses.
Źródło:: Acta Physica Polonica A; 2009, 115, 6; 973-975
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment
Autorzy:: Wieteska, K.
Misiuk, A.
Prujszczyk, M.
Wierzchowski, W.
Surma, B.
Bąk-Misiuk, J.
Romanowski, P.
Shalimov, A.
Capan, I.
Yang, D.
Graeff, W.
Powiązania:: https://bibliotekanauki.pl/articles/1812256.pdf
Data publikacji:: 2008-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.c-
61.72.-y
61.82.-d
Opis:: Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content $(c_O)$ up to $1.1×10^{18} cm^{-3}$, admixed with N or Ge (Si-N, c_N ≤ $1.2×10^{15} cm^{-3}$, or Si-Ge, $c_{Ge} ≈ 7×10^{17} cm^{-3}$, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
Źródło:: Acta Physica Polonica A; 2008, 114, 2; 439-446
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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