Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Wrobel, K." wg kryterium: Autor


Wyświetlanie 1-13 z 13
Tytuł:
Effect of asymmetric cold rolling on texture of a commercially pure copper
Autorzy:
Uniwersał, A.
Wróbel, M.
Wierzbanowski, K.
Wroński, M.
Powiązania:
https://bibliotekanauki.pl/articles/1112983.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Ef
Opis:
This study deals with the influence of the rolling asymmetry and applied strain on the crystallographic texture of polycrystalline copper. It was shown that textures of asymmetrically rolled materials are rotated with respect to those rolled symmetrically and the rotation angle increases both with the rolling asymmetry and strain. The asymmetric rolling leads also to a decrease of intensity of texture components forming skeleton lines in the orientation space. However, individual texture components exhibit different sensitivity to the effect of asymmetric rolling.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1049-1052
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Two-Dimensional Electron Gas in LPE-Grown GaInAs-InP Heterostructures
Autorzy:
Fronc, K.
Grabecki, G.
Wróbel, J.
Dietl, T.
Gajewska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1891365.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Df
73.20.Dx
73.60.Br
Opis:
A series of GaInAs/InP heterostructures was grown by liquid phase epitaxy. The heterostructures were characterized by magnetotransport measurements carried out down to 1.8 K and up 10 T. The results demonstrate the existence of the high-mobility two-dimensional electron gas in the narrow-gap GaInAs as well as the presence of residual conductance through the InP buffer layer.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 449-452
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanical and Electrical Properties, of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy
Autorzy:
Aleszkiewicz, M.
Fronc, K.
Wróbel, J.
Klepka, M.
Wojtowicz, T.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/2047440.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ef
68.37.Ps
68.65.La
73.21.Hb
78.67.Lt
Opis:
Scanning tunneling spectroscopy was used to check the tunneling I-V characteristics of junctions formed by n-ZnO nanowires deposited on Si substrates with n- and p-type electrical conductivity (i.e. n-ZnO nanowire/n-Si and n-ZnO nanowire/p-Si junctions, respectively). Simultaneously, several phenomena which influence the measured I-V spectra were studied by atomic force microscopy. These influencing factors are: the deposition density of the nanowires, the possibility of surface modification by tip movement (difference in attraction forces between nanowires and the p-Si and n-Si) and the aging of the surface.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 255-260
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation of activated carbon from beet molasses and TiO₂ as the adsorption of CO₂
Autorzy:
Glonek, K.
Sreńscek-Nazzal, J.
Narkiewicz, U.
Morawski, A.
Wróbel, R.
Michalkiewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/1075525.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.U-
68.43.-h
Opis:
The objective of this work is to produce activated carbon from sugar beet molasses containing TiO₂ for CO₂ adsorption and reduction. Textural properties of activated carbons were obtained based on the adsorption-desorption isotherms of nitrogen at 77 K. The specific surface areas of activated carbons were calculated by the Brunauer-Emmett-Teller method. The volumes of micropores were obtained by density functional theory method. The adsorption isotherms of CO₂ were measured up to the pressure of 1 atm at a temperature of 40°C. The best activated carbon adsorbed 1.9 mmol/g of CO₂.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 158-161
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics and Phase Transitions of 4-Bromobenzylidene-4'-pentyloxyaniline and 4-Bromobenzylidene-4'-hexyloxyaniline as Studied by Dielectric Spectroscopy
Autorzy:
Osiecka, N.
Massalska-Arodź, M.
Galewski, Z.
Chłędowska, K.
Wróbel, S.
Morito, T.
Yamamura, Y.
Saito, K.
Powiązania:
https://bibliotekanauki.pl/articles/1399008.pdf
Data publikacji:
2013-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.84.Nh
64.70.pp
64.70.M-
33.15.Bh
Opis:
Significant differences in phase sequence and dynamics between 4-bromobenzylidene-4'-pentyloxyaniline (5BBA) and -bromobenzylidene-4'-heksyloxyaniline (6BBA) substances were detected by broadband dielectric spectroscopy. In the smectic A (6BBA), the smectic B (found in both substances) and the smectic E (5BBA) phases the relaxation was ascribed to reorientations of the molecules around the short axes. Slow dynamics detected in the smectic E and in two crystalline phases of 5BBA was ascribed to conformational changes of molecular chains. Coexistence of Cr(I) and Cr(II) conformationally disordered crystal (CONDIS) phases was observed and vitrification of Cr(II) was identified with help of polarizing microscopy.
Źródło:
Acta Physica Polonica A; 2013, 124, 6; 913-916
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoplasmons in a High Electron Mobility GaAs/AlGaAs Heterostructure
Autorzy:
Białek, M.
Karpierz, K.
Piętka, B.
Grynberg, M.
Łusakowski, J.
Czapkiewicz, M.
Fronc, K.
Wróbel, J.
Umansky, V.
Powiązania:
https://bibliotekanauki.pl/articles/1409613.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Mf
Opis:
We have observed a multimode spectrum of magnetoplasmons in the Hall bars processed on a high electron mobility GaAs/AlGaAs heterostructure. We have found that the dispersion relation of these excitation follows square root dependence. Calculated wavelength of the fundamental magnetoplasmon mode fits to the width of sample.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1096-1098
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
Autorzy:
Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934054.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrostatic Gates for GaN/AlGaN Quantum Point Contacts
Autorzy:
Czapkiewicz, M.
Cywiński, G.
Dybko, K.
Siekacz, M.
Wolny, P.
Gierałtowska, S.
Guziewicz, E.
Skierbiszewski, C.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1403637.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.61.Ng
73.23.-b
Opis:
We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are defined by the integration of side and top gates in a single device. In this configuration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of $HfO_2$ or $Al_2O_3//HfO_2$ composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current $I_g < 10^{-11}$ A at gate voltages $|V_g|$ < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-off voltage at $V_g$ = - 3.5 V at a cost of $I_g ≈ 10^{-6} A$, which has been identified as a bulk leakage current.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1026-1028
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Electrical Characterization of PbS-EuS Ferromagnetic Semiconductor Microstructures
Autorzy:
Wrotek, S.
Morawski, A.
Tkaczyk, Z.
Mąkosa, A.
Wosiński, T.
Dybko, K.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Pécz, B.
Grasza, K.
Szczerbakow, A.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038135.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Le
75.30.Et
75.70.Cn
Opis:
Current-voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10 x 10 μm$\text{}^{2}$ to 100 x 100 μm$\text{}^{2}$) ferromagnetic EuS-PbS-EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 615-620
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vertical Electron Transport through PbS-EuS Structures
Autorzy:
Wrotek, S.
Dybko, K.
Morawski, A.
Mąkosa, A.
Wosiński, T.
Figielski, T.
Tkaczyk, Z.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Szczerbakow, A.
Grasza, K.
Wróbel, J.
Palosz, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036032.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 629-635
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetization Steps in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Observed in Coherent Transport
Autorzy:
Jaroszyński, J.
Dietl, T.
Wróbel, J.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Maude, D. K.
van der Linden, P.
Portal, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/1968114.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Rn
73.61.Ga
73.20.Fz
Opis:
Magnetoconductance measurements on submicron wires of n$\text{}^{+}$-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te were carried out up to 27 T and down to 100 mK. The inverse correlation field of the universal conductance fluctuations is found to increase abruptly in the vicinity of the magnetization steps due to Mn pairs in CdMnTe. No such effect is observed in similar wires of CdTe. These findings support a recent model, according to which the correlation field of the universal conductance fluctuations in magnetic systems is inversely proportional to the magnetic susceptibility of the localized spins.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 797-800
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Properties of ZnO and ZnCdO Nanowires
Autorzy:
Zaleszczyk, W.
Fronc, K.
Aleszkiewicz, M.
Paszkowicz, W.
Wróbel, J.
Dłużewski, P.
Kret, S.
Klepka, M.
Kłopotowski, Ł.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/2047698.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Bf
81.05.Dz
81.07.Bc
Opis:
We report on the photoluminescence studies of ZnO and ZnCdO nanowires grown on SiO$\text{}_{2}$/Si substrates by low-pressure vapor phase synthesis. X-ray diffraction and transmission electron microscopy measurements show that the crystallographic structure of these ZnO and ZnCdO nanowires is of wurtzite-type with a high crystal perfection. Surface morphology of samples was determined by scanning electron microscopy and atomic force microscopy. The photoluminescence spectra of as-grown nanowires, nanowires extracted from the substrate and deposited onto Si wafer, and nanowires dispersed in ethanol by sonication were investigated at room temperature and compared to each other. The temperature dependence of the near band-gap photoluminescence emitted by the as-grown nanowires was also measured and analyzed.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 357-362
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Properties of ZnO Nanowires Grown on Ni Substrate
Autorzy:
Zaleszczyk, W.
Fronc, K.
Przeździecka, E.
Janik, E.
Czapkiewicz, M.
Wróbel, J.
Paszkowicz, W.
Kłopotowski, Ł.
Karczewski, G.
Wojtowicz, T.
Presz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1812028.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.67.Bf
81.05.Dz
81.07.Bc
Opis:
Photoluminescence studies of zinc oxide nanowires produced by a carbo-thermal method on a nickel foil substrate are reported. Two types of as-grown samples: the first - containing only buffer film, and the second - containing both zinc oxide nanowires and buffer film grown in the same technological process, were investigated by means of the temperature-dependent photoluminescence. X-ray diffraction measurements of buffer film show that it is polycrystalline and is composed from wurtzite-type ZnO (main phase) and includes minority phases: rock salt type (Ni,Zn)O and hexagonal C₃N₄. The shape of the apparently monocrystalline nanowires is characterized by hexagonal section matching with the expectations of the hexagonal ZnO structure. The presence of LO-phonon replicas in photoluminescence spectra for the second sample is used as an argument for confirmation that ZnO nanowires are single crystalline. The method of growth of ZnO nanowires on nickel oxide opens perspectives to produce $Zn_{1-x}Ni_{x}O$ diluted magnetic semiconductor nanowires.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1451-1456
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-13 z 13

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies