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Wyświetlanie 1-15 z 31
Tytuł:
Application of Photomemory Effect in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$:In for Direct Measurements of Magnetization of Bound Magnetic Polarons
Autorzy:
Wojtowicz, T.
Koleśnik, S.
Miotkowski, I.
Furdyna, J. K.
Powiązania:
https://bibliotekanauki.pl/articles/1921550.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.38.+i
75.50.Pp
Opis:
The first direct measurement of the magnetization of donor bound magnetic polarons in diluted magnetic semiconductors is reported. The experiment has been performed taking advantage of photomemory effect found in n-type Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ crystals doped with In. Good agreement between experimental results and theory of bound magnetic polarons is observed.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 637-640
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial Growths of II-VI Compounds on (110) Substrates
Autorzy:
Cywiński, G.
Wojtowicz, T.
Kopalko, K.
Karczewski, G.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1969044.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
Opis:
We studied epitaxial growth conditions of II-VI semiconductors on (110) substrates, which is indispensable for fabrication of T-shaped quantum wire structures. We experimented with different types of (110)-oriented substrates and monitored the surface quality of deposited layers in situ by reflection high energy electron diffraction and ex situ by photoluminescence. The aim of this work is to find optimum growth conditions of II-VI compounds on a cleaved edge of a superlattice as required by the overgrowth method.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 281-284
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rare Earth Ion Implantation in GaN: Damage Formation and Recovery
Autorzy:
Gloux, F.
Ruterana, P.
Wojtowicz, T.
Lorenz, K.
Alves, E.
Powiązania:
https://bibliotekanauki.pl/articles/2046897.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
61.72.Nn
68.37.Lp
81.05.-t
Opis:
Rare earth ions implanted GaN has been investigated by transmission electron microscopy versus the fluence, using Er, Eu or Tm ions at 150 keV or 300 keV and at room temperature. Point defect clusters and stacking faults are generated from low fluences (7×10$\text{}^{13}$ at/cm$\text{}^{2}$), their density increases with the fluence up to the formation of a highly disordered layer at the surface. This highly disordered layer is observed from a threshold fluence of 3×10$\text{}^{14}$ at/cm$\text{}^{2}$ at 150 keV and 3×10$\text{}^{15}$ at/cm$\text{}^{2}$ at 300 keV, and appears to be composed of voids and misoriented nanocrystallites. Its thickness rapidly increases with the fluence, and then saturates. Both basal and prismatic stacking faults were observed. Basal stacking faults are I$\text{}_{1}$ in majority, but E or I$\text{}_{2}$ have also been identified. I$\text{}_{1}$ basal stacking faults propagate easily through GaN by folding from basal to prismatic planes. Channelling implantation, increasing the implantation temperature from room temperature to 500ºC, or implanting through a 10 nm thick AlN cap reduce the crystallographic damage, particularly by retarding the formation of the highly disordered layer. Implanting through the AlN cap allows the highly disordered layer formation threshold fluence to be increased by one order of magnitude, as well as the annealing at high temperature (1300ºC) which brings about a strong optical activation of the rare earths.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 125-137
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Traps in Ce-Doped CaF$\text{}_{2}$ and BaF$\text{}_{2}$
Autorzy:
Drozdowski, W.
Przegiętka, K. R.
Wojtowicz, A. J.
Oczkowski, H. L.
Powiązania:
https://bibliotekanauki.pl/articles/1994795.pdf
Data publikacji:
1999-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Kn
73.50.Gr
29.40.Mc
Opis:
Thermoluminescence of CaF$\text{}_{2}$:Ce, BaF$\text{}_{2}$, and BaF$\text{}_{2}$:Ce irradiated at room temperature is reported. X-ray induced emission spectra of the samples show that both excitonic (due to e$\text{}^{-}$+V$\text{}_{K}$ recombination) and Ce$\text{}^{3+}$ d-f luminescence may contribute to thermoluminescence signal. The simple Randall-Wilkins model is used to deconvolute glow curves into seven to eight first-order peaks. Parameters of all traps are calculated and correlations between peaks in the curves of the examined materials are discussed.
Źródło:
Acta Physica Polonica A; 1999, 95, 2; 251-258
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
Autorzy:
Żakrzewski, A. K.
Dobaczewski, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934051.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
Opis:
N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 961-964
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Study of Photoluminescence from Deep CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Quantum Wells
Autorzy:
Kutrowski, M.
Wojtowicz, T.
Karczewski, G.
Kopalko, K.
Zakrzewski, A. K.
Janik, E.
Grasza, K.
Łusakowska, E.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876361.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
78.55.Et
Opis:
The photoluminescence studies in CdTe/CdMnTe quantum wells are reported in the temperature range 10-300 K. The MnTe concentration in the barriers is x = 0.3, 0.5, 0.63 and 0.68. Thus the potential wells in our samples are very deep, of the order of ≈ 800 meV in the conduction band and ≈ 200 meV in the valence band in the case of the x = 0.68 sample. In spite of the large lattice mismatch (related to high x value) between the wells and the barriers the observed line widths are as narrow as 2 meV in the case of 100 Å. Clear manifestations of internal strain are observed. In particular, the temperature coefficient of the luminescence energies shows strong dependence on the width of wells.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 500-504
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanical and Electrical Properties, of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy
Autorzy:
Aleszkiewicz, M.
Fronc, K.
Wróbel, J.
Klepka, M.
Wojtowicz, T.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/2047440.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ef
68.37.Ps
68.65.La
73.21.Hb
78.67.Lt
Opis:
Scanning tunneling spectroscopy was used to check the tunneling I-V characteristics of junctions formed by n-ZnO nanowires deposited on Si substrates with n- and p-type electrical conductivity (i.e. n-ZnO nanowire/n-Si and n-ZnO nanowire/p-Si junctions, respectively). Simultaneously, several phenomena which influence the measured I-V spectra were studied by atomic force microscopy. These influencing factors are: the deposition density of the nanowires, the possibility of surface modification by tip movement (difference in attraction forces between nanowires and the p-Si and n-Si) and the aging of the surface.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 255-260
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Persistent Spin Resonance of Donor Electrons and Hopping Magnetoconductivity in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$
Autorzy:
Wojtowicz, T.
Semaltianos, N.
Kłosowski, P.
Dobrowolska, M.
Furdyna, J. K.
Miotkowski, I.
Powiązania:
https://bibliotekanauki.pl/articles/1890647.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
71.25.Jd
72.20.My
Opis:
The first observation of electric dipole spin resonance of donor electrons in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ in far-infrared magnetotransmission is reported. Modification of the donor wave function due to non-diagonal exchange interaction with localized magnetic moments and to magnetic fluctuations are believed to allow this resonance. Hopping magnetoconductivity studied in the same crystals shows a behavior typical for wide gap diluted magnetic semiconductors.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 287-290
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopy of Indirect Excitons in Vertically Stacked CdTe Quantum Dot Structures
Autorzy:
Kukliński, K.
Kłopotowski, Ł.
Fronc, K.
Wojnar, P.
Wojciechowski, T.
Czapkiewicz, M.
Kossut, J.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1492851.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
78.67.Hc
32.60.+i
Opis:
We show that by means of an electric field we can tune the energy levels in vertical quantum dot pairs and study transitions related to recombination of direct and indirect excitons. With decreasing the reverse bias, we observe both the blue- and red-shifted indirect exciton transitions. Based on the band profile of our device, we conclude that the former corresponds to the recombination of the electron and hole localized in the top and the bottom dot, respectively and the latter is related to the recombination of the electron and hole localized in the bottom and the top dot, respectively.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 856-858
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal Desorption of Krypton Implanted into Silicon
Autorzy:
Turek, M.
Droździel, A.
Wójtowicz, A.
Filiks, J.
Pyszniak, K.
Mączka, D.
Yuschkevich, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1030211.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.43.Vx
61.72.uf
Opis:
The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2×10¹⁶ cm¯²) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr⁺G double implantation was performed. A sudden Kr release was observed in the ≈1100-1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈3.2 eV for both releases.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 249-253
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Non-Ohmic Conductivity of High Resistivity CdTe
Autorzy:
Łusakowski, J.
Szczytkowski, J.
Szadkowski, K.
Kamińska, E.
Piotrowska, A.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1933850.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.-r
Opis:
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown layers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the current flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 803-806
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Interface-Induced Disorder on Classical and Quantum Conductivity of CdTe:IN Epitaxial Layers
Autorzy:
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Karczewski, G.
Wojtowicz, T.
Contreras, S.
Callen, O.
Powiązania:
https://bibliotekanauki.pl/articles/1968369.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
73.61.Ga
Opis:
An influence of disorder originated from the substratelayer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface-induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 911-914
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Optical Properties of CdTe/CdMnTe Quantum Wells Grown by Molecular Beam and Atomic Layer Epitaxy
Autorzy:
Godlewski, M.
Kopalko, K.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1952470.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
78.47.+p
78.55.Et
Opis:
Optical properties of a series of CdTe/CdMnTe multi quantum well structures grown with MBE and ALE (CdTe quantum wells only) methods are compared. Based on the results of the photoluminescence experiments we conclude that the ALE growth leads to a different lateral scale of quantum well width fluctuations, which results in different exciton properties in two multi quantum well systems studied. In the wells grown with ALE method excitons are less localized. They can migrate in a quantum well plane between quantum well regions varying in thickness by 1 monolayer.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1012-1016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deterioration of Mechanical Properties of MBE-Grown, Metastable Semiconductor Layer with Time: the Case of Zinc Blende MnTe
Autorzy:
Adamiak, S.
Dynowska, E.
Dziedzic, A.
Szmuc, K.
Janik, E.
Wiater, M.
Wojtowicz, T.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1185914.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
62.20.-x
64.60.My
Opis:
Several few μm thick (001)-oriented, metastable MnTe layers with the zinc blende structure grown onto (001)GaAs substrate by MBE during different periods for the last twenty years were investigated by the scanning electron microscopy, atomic force microscopy, X-ray diffraction, and nanoindentation methods. A partial decomposition of the oldest investigated layers was demonstrated. An important decrease of Young's modulus from about 34 GPa to about 17 GPa, resulting from a deterioration of the crystal structure of such layers, was found.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1248-1250
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal Desorption of Helium from Defected Silicon
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Wójtowicz, A.
Mączka, D.
Yuschkevich, Y.
Vaganov, Y.
Żuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402210.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.43.Vx
61.72.uf
Opis:
The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10¹⁶ cm¯². Additionally, the influence of Si pre-implantation (fluences in the range 10¹⁴-10¹⁶ cm¯², E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10¹⁵ cm¯², while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10¹⁶ cm¯².
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 849-852
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 31

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