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Wyświetlanie 1-10 z 10
Tytuł:
Influence of Cr-Substitution on the Electrical Properties of $Fe_{1-x}Cr_{x}SnSbO_6$
Autorzy:
Groń, T.
Dąbrowska, G.
Filipek, E.
Duda, H.
Sawicki, B.
Powiązania:
https://bibliotekanauki.pl/articles/1398554.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Pa
72.80.Ga
75.20.-g
Opis:
$Fe_{1-x}Cr_xSnSbO_6$ solid solution shows semiconducting behaviour with the activation energy decreasing from $E_{A}$=0.64 eV for x=0.0 to $E_{A}$=0.32 eV for x=1.0 in the intrinsic conductivity temperature region as well as the n-type conduction at room temperature. The I-V characteristics and the conductance G at 300 and 400 K showed symmetrical and nonlinear behavior in the voltage range (-100, 100 V) suggesting the electron emission over the potential barrier especially for the boundary compounds FeSnSbO₆ and CrSnSbO₆. These effects are discussed in the context of the energy gap $E_{g}$>1.6 eV many times greater than the thermal energy kT.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-153-A-156
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Transport Properties of $Yb_{8-x}Y_xV_2O_{17}$ (x=0,2,8)
Autorzy:
Sawicki, B.
Piz, M.
Filipek, E.
Groń, T.
Duda, H.
Powiązania:
https://bibliotekanauki.pl/articles/1398346.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Pa
72.80.Ga
75.20.-g
Opis:
The UV-vis-NIR and electrical properties of $Yb_{8-x}Y_xV_2O_{17}$ for x=0, 2, and 8 were investigated. The band energy gap of 2.6 eV determined for $Yb_6Y_2V_2O_{17}$ (x=2) and comparable for the remaining compounds with x=0 and 8 is characteristic for insulators. Low electrical conductivity with a characteristic minimum shifting to higher temperatures from 322, via 360 to 370 K in the sequence x=0, 2 and 8, which decreases with increasing content of ytterbium was observed. Temperature dependence of thermoelectric power showed n-p transition at 410 and 467 K for x=0 and 2, respectively, and n-type conductivity for x=8, indicating mainly n-type electrical conductivity. A breakdown voltage of 26 V/mm is mainly observed for the I-V characteristics at 400 K and showing a varistor-like behavior.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 363-366
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlation between the band-gap energy and the electrical conductivity in MPr₂W₂O₁₀ tungstates (where M = Cd, Co, Mn)
Autorzy:
Sawicki, B.
Tomaszewicz, E.
Piątkowska, M.
Groń, T.
Duda, H.
Górny, K.
Powiązania:
https://bibliotekanauki.pl/articles/1160256.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
72.20.-i
72.80.Sk
Opis:
The values of the direct allowed energy gap determined from the UV-vis-NIR measurements and Kubelka-Munk transformation decrease from 3.38 via 2.70 to 2.42 eV for MPr₂W₂O₁₀ in the sequence M = Cd, Co, Mn, while the values of the activation energy increase from 0.11 via 0.44 to 0.47 eV in the same sequence. In other words, the higher the activation energy, the smaller the energy gap. Because the energy gap is typical for insulators, so electron transport phenomena are considered under the Poole-Frenkel effect and small-polaron mechanism.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-94-A-96
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of Sr₂InV₃O₁₁
Autorzy:
Groń, T.
Filipek, E.
Pacześna, A.
Urbanowicz, P.
Sawicki, B.
Duda, H.
Powiązania:
https://bibliotekanauki.pl/articles/1398582.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Pa
72.80.Ga
75.20.-g
Opis:
The electrical conductivity σ (T) and thermoelectric power S(T) measurements of Sr₂InV₃O₁₁ showed the insulating state and the change of sign of thermopower from p to n at $T_{n-p}$=400 K. The I-V characteristics provided the evidence of symmetrical and non-linear behaviour typical of strong emission of charge carriers induced by temperature and voltage. Relative dielectric permittivity $ε_{r}$ as well as loss tangent (tan δ) strongly depend both on the temperature in the range of 295-400 K and the frequency in the range of 5×10² to 1×10⁶ Hz, showing the broad maximum at 320 K. These effects are considered as a relaxation process like in the Maxwell-Wagner or Jonscher model as well as the conduction of electric current, as determined by the Joule-Lenz law.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1239-1241
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
Autorzy:
Łukasiewicz, M.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Sawicki, M.
Paszkowicz, W.
Łusakowska, E.
Jakieła, R.
Krajewski, T.
Kowalik, I.
Kowalski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1791350.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 921-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MnAs Overlayer on GaN(000$\text{}_{1}$)-(1 x 1) - Its Growth, Morphology and Electronic Structure
Autorzy:
Kowalski, B. J.
Kowalik, I. A.
Iwanowski, R. J.
Łusakowska, E.
Sawicki, M.
Sadowski, J.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2038151.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
73.20.At
Opis:
MnAs layer has been grown by means of MBE on the GaN(000$\text{}_{1}$)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 645-650
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of Molecular Beam Epitaxy Grown High x Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:
Sawicki, M.
De Groot, P. A. J.
Brummell, M. A.
Tomka, G. J.
Ashenford, D. E.
Lunn, B.
Powiązania:
https://bibliotekanauki.pl/articles/1929744.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Rr
68.55.Bd
Opis:
Magnetization measurements performed on molecular beam epitaxy grown Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te structures revealed basically similar magnetic properties of thick epilayers to their bulk counterparts. However, remarkably different properties were detected for a superlattice. These are attributed to a smearing out of the Mn profile in the superlattice.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 745-748
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
Autorzy:
Gierałtowska, S.
Sztenkiel, D.
Guziewicz, E.
Godlewski, M.
Łuka, G.
Witkowski, B. S.
Wachnicki, Ł.
Łusakowska, E.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048118.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
77.55.-g
77.84.Bw
81.05.Ea
Opis:
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 692-695
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic and structural studies of GeMnSnTe epitaxial layers
Autorzy:
Grochot, A.
Knoff, W.
Taliashvili, B.
Wołkanowicz, W.
Minikayev, R.
Pieniążek, A.
Łusakowska, E.
Sawicki, M.
Jantsch, W.
Story, T.
Przybylińska, H.
Powiązania:
https://bibliotekanauki.pl/articles/1055147.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Gw
75.50.Pp
76.50.+g
Opis:
MBE grown Ge_{1-x-y}Mn_xSn_yTe layers with Mn content ranging from 10 to 30% and Sn content ranging from 2 to 5% have been characterized with X-ray diffraction, energy-dispersive X-Ray spectroscopy, atomic force microscopy, SQUID magnetometry, and ferromagnetic resonance. All layers (except the one with the highest Mn and Sn content) were found to be single phase rhombohedral, with the distortion axis perpendicular to the layer surface, and ferromagnetic. Ferromagnetic resonance studies have shown that co-doping with a few percent of tin makes the lattice more rigid and changes considerably the magnetocrystalline anisotropy, from purely uniaxial in GeMnTe to distorted cubic in Ge_{1-x-y}Mn_xSn_yTe at the same Mn content.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 340-342
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetooptical Properties of (Ga,Fe)N Layers
Autorzy:
Papierska, J.
Rousset, J.
Pacuski, W.
Kossacki, P.
Golnik, A.
Nawrocki, M.
Gaj, J.
Suffczyński, J.
Kowalik, I.
Stefanowicz, W.
Sawicki, M.
Dietl, T.
Navarro-Quezada, A.
Faina, B.
Li, T.
Bonanni, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492954.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.30.Hx
78.20.Ls
71.35.Ji
Opis:
Magnetooptical properties of (Ga,Fe)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the growth conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism. Possible reasons for differences in magnetic response determined by magnetic circular dichroism and SQUID measurements are discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 921-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-10 z 10

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