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Wyszukujesz frazę "Sadowski, L." wg kryterium: Autor

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    Wyświetlanie 1-10 z 10
    Tytuł:
    Experimental Evidence for the Spatial Correlation of Charged EL2(+) Defects and Acceptors in Semi-insulating GaAs
    Autorzy:
    Sadowski, M. L.
    Grynberg, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931911.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.50.+p
    78.50.Ge
    71.55.Eq
    Opis:
    The far-infrared photoconductivity due to shallow donors was measured in semi-insulating GaAs for different states of the EL2 defect - normal, metastable, and during the transition - with and without hydrostatic pressure. The results show that the intra-donor transition line broadening observed previously after transferring the EL2 to the metastable configuration cannot be due to lattice distortion effects, and can only be explained in terms of a spatial correlation of charged EL2(+) and acceptor A(-) states, which form electric dipoles.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 133-136
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Intra-Shallow-Donor Photoconductivity in Semi-Insulating GaAs
    Autorzy:
    Karpierz, K.
    Sadowski, M. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1877562.pdf
    Data publikacji:
    1991-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    78.20.ls
    78.50.Ec
    78.50.Ge
    Opis:
    The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p$\text{}_{+1}$ transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 1; 121-124
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetophotoconductivity Due to Intra-Shallow-Donor Transitions in Semi-Insulating GaAs
    Autorzy:
    Karpierz, K.
    Sadowski, M. L.
    Grynberg, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1890653.pdf
    Data publikacji:
    1991-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    78.20.Ls
    78.50.-w
    Opis:
    The paper concerns investigations of shallow centres in semi-insulating (SI) GaAs samples. A very sensitive measuring method - magnetophotoconductivity due to intra-shallow-donor transitions - was used. We report the behaviour of intra-impurity transitions as well as an additional structure in low magnetic fields for different far-infrared wavelengths (70.6 μm, 96.5 μm, 118.8 μm, 163 µm). The results are discussed in terms of a fluctuating potential from ionized centres in SI GaAs. The physical mechanism responsible for the low magnetic field structure is proposed.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 2; 291-294
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Biological Synthesis of Gold Nanostructures Using the Extract of Trichoderma koningii
    Autorzy:
    Maliszewska, I.
    Aniszkiewicz, Ł.
    Sadowski, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807583.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    87.17.Uv
    Opis:
    The fungus-mediated synthesis of gold nanoparticles with various shapes and sizes is reported. Shape and size of the products may be controlled using different concentrations of $HAuCl_{4}$.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-163-S-165
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth of YbTe on GaAs(100) and BaF$\text{}_{2}$(111) Substrates
    Autorzy:
    Sadowski, J.
    Dynowska, E.
    Kowalczyk, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934069.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.14.Hg
    81.15.Gh
    Opis:
    The structural properties of MBE grown YbTe layers were investigated by X-ray diffraction methods and photoluminescence measurements. YbTe films were grown on the ZnTe and CdTe buffer layers crystallised on the GaAs(100) 2° off oriented substrates and on the BaF$\text{}_{2}$(100) substrates. In the case of GaAs substrates the two-dimensional growth mode of YbTe was observed on reflection high energy electron diffraction picture. Results of the X-ray rocking curve and photoluminescence excitation measurements indicate that the structural properties of YbTe films are comparable to the properties of the MBE grown ZnTe and CdTe layers on the GaAs(100) substrates. The measured values of the YbTe lattice constant parallel and perpendicular to the growth plane show that the 1 μm thick layers are partially strained. The full width at half maximum values of the X-ray rocking curves are the smallest (900 arc seconds) for the YbTe films crystallised on the 2 μm thick CdTe bucher layer grown on the GaAs(100) substrate. In the case of BaF$\text{}_{2}$(111) substrate the two-dimensional MBE growth mode of YbTe was not observed.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 1028-1032
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth and Properties of ZnYbTe Layers
    Autorzy:
    Sadowski, J.
    Szamota-Sadowska, K.
    Świątek, K.
    Kowalczyk, L.
    Abounadi, A.
    Rajira, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952684.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    61.14.Hg
    Opis:
    The MBE grown ZnYbTe layers were characterized by X-ray diffraction, photoluminescence and reflectivity measurements. The MBE growth conditions allowing to obtain monocrystalline ZnYbTe layers were found to be metal-rich (MBE growth with excess of Zn flux). In optical measurements (photoluminescence, reflectivity), both transitions connected with ternary ZnYbTe compound and with Yb$\text{}^{3+}$ ions were detected. The quality of ZnYbTe layers with Yb content of 3% and 1% is inferior to the quality of pure ZnTe MBE layers, which is clearly seen in the results of photoluminescence and reflectivity measurements. In the ZnYbTe layers with 3% Yb, exhibiting monocrystalline character in reflection high-energy electron diffraction and X-ray diffraction measurements, optical transitions characteristic of pure YbTe were detected. In ZnYbTe layers with 1% Yb, no transitions connected with YbTe were observed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1060-1064
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth and Properties of GaMnAs(100) Films
    Autorzy:
    Sadowski, J.
    Domagała, J.
    Bąk- Misiuk, J.
    Świątek, K.
    Kanski, J.
    Ilver, L.
    Oscarsson, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992165.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    79.60.Bm
    71.55.Eq
    Opis:
    We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 509-513
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties
    Autorzy:
    Levchenko, K.
    Andrearczyk, T.
    Domagała, J.
    Sadowski, J.
    Kowalczyk, L.
    Szot, M.
    Figielski, T.
    Wosiński, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160667.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    61.05.cp
    78.20.Ls
    73.50.Jt
    75.30.Gw
    Opis:
    Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-90-A-93
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Photoluminescence Study in PbS-EuS Superlattices
    Autorzy:
    Kowalczyk, L.
    Sadowski, J.
    Gałązka, R. R.
    Stachow-Wójcik, A.
    Sipatov, A. Yu.
    Volobuev, V. V.
    Smirnov, V. A.
    Dugaev, V. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1991612.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    Opis:
    Investigations of the photoluminescence of PbS-EuS superlattices deposited on (111)BaF$\text{}_{2}$ substrates are presented. Quantum-size and deformation effects in photoluminescence spectra are observed. The strain-induced gap shift and valence-band offset is determined from experimental results. A strong stimulated photoluminescence with relatively low threshold was observed. It was found that the photocarriers generated in EuS barrier strongly affect the population of PbS subbands.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 397-400
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Yb on Valence Band Density of States of CdYbTe and PbYbTe - a Resonant Photoemission Study
    Autorzy:
    Szamota-Sadowska, K.
    Kowalski, B. J.
    Guziewicz, E.
    Orłowski, B. A.
    Sadowski, J.
    Gołacki, Z.
    Ghijsen, J.
    Johnson, R. L.
    Belkhou, R.
    Radosavkič, D.
    Martinotti, D.
    Barrett, N.
    Guillot, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952185.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Vv
    Opis:
    Photoemission measurements using synchrotron radiation were performed on PbYbTe (bulk crystal) and CdYbTe (MBE thin film). The resonant enhancement of the photoemission was applied for investigation of the contribution of Yb 4f electrons to the valence band. The set of the energy distribution curves was collected for energies in the region close to the 4d-4f Fano transition. The Yb 4f$\text{}^{14}$ were observed at the binding energies close to the edge of the valence band while the 4f$\text{}^{13}$ states were revealed deep in the valence band.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 943-946
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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