Autor: Rousset, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: MBE Growth and Magnetooptical Properties of (Zn,Co)Te Layers
Autorzy:: Papaj, M.
Kobak, J.
Rousset, J.
Janik, E.
Golnik, A.
Kossacki, P.
Pacuski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1403629.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
75.30.Hx
78.20.Ls
71.35.Ji
Opis:: We report on epitaxial growth of diluted magnetic semiconductor (Zn,Co)Te. Reflectivity spectra reveal excitonic transition which split under magnetic field due to giant Zeeman effect. Magnetooptical effects can be described using literature data.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1010-1011
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Type I CdSe and CdMgSe Quantum Wells
Autorzy:: Rudniewski, R.
Rousset, J.
Janik, E.
Kossacki, P.
Golnik, A.
Nawrocki, M.
Pacuski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1376087.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.-e
81.05.Dz
81.07.-b
Opis:: In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/$Cd_{0.9}Mg_{0.1}Se$ and $Cd_{0.9}Mg_{0.1}Se$/$Cd_{0.85}Mg_{0.15}Se$ quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/$Cd_{0.9}Mg_{0.1}Se$ wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1167-1170
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: MBE Growth of CdTe/ZnTe Quantum Dots with Single Mn Ions
Autorzy:: Gietka, K.
Kobak, J.
Rousset, J.
Janik, E.
Słupiński, T.
Kossacki, P.
Golnik, A.
Pacuski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1403652.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Et
81.07.Ta
78.67.Hc
75.50.Pp
75.75.Cd
75.30.Hx
Opis:: We report MBE growth and properties of samples with self assembled quantum dots with single manganese ions and low density of quantum dots. Manganese concentration was calibrated using magneto-reflectivity measurements and the giant Zeeman effect in (Cd,Mn)Te and (Zn,Mn)Te layers. Successful incorporation of Mn in the CdTe/ZnTe quantum dots was confirmed using micro-photoluminescence measurements: single manganese ion in quantum dot manifests in sixfold splitting of exciton emission lines due to s, p-d exchange interaction.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1056-1058
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots
Autorzy:: Rousset, J.
Słupinski, T.
Jakubczyk, T.
Kobak, J.
Stawicki, P.
Gołasa, K.
Babinski, A.
Nawrocki, M.
Pacuski, W.
Powiązania:: https://bibliotekanauki.pl/articles/1403611.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.Ci
78.67.Pt
68.37.Hk
Opis:: We describe the realization and characterization of a distributed Bragg reflectors and InAs quantum dots grown by molecular beam epitaxy. The distributed Bragg reflectors are based on a stack of eight or twenty pairs of GaAs and AlAs layers with a stopband centered at about E_0=1.24 eV (λ_0=1000 nm). The whole structures exhibit a reflectivity coefficient above 90%. The growth rate was monitored in situ by measurement of the oscillations of the thermal emission intensity. The investigations conducted on the InAs quantum dots grown on GaAs show photoluminescence around E=1.25 eV (λ=990 nm). The combination of these two elements results in the realization of a microcavity containing InAs quantum dots and surrounded by 20 pairs of distributed Bragg reflectors.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 984-987
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Structural and optical properties of boron nitride grown by MOVPE
Autorzy:: Dąbrowska, A.
Pakuła, K.
Bożek, R.
Rousset, J.
Ziółkowska, D.
Gołasa, K.
Korona, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:: https://bibliotekanauki.pl/articles/1160531.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Gh
78.30.Fs
78.20.-e
Opis:: Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: Magnetooptical Properties of (Ga,Fe)N Layers
Autorzy:: Papierska, J.
Rousset, J.
Pacuski, W.
Kossacki, P.
Golnik, A.
Nawrocki, M.
Gaj, J.
Suffczyński, J.
Kowalik, I.
Stefanowicz, W.
Sawicki, M.
Dietl, T.
Navarro-Quezada, A.
Faina, B.
Li, T.
Bonanni, A.
Powiązania:: https://bibliotekanauki.pl/articles/1492954.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
75.30.Hx
78.20.Ls
71.35.Ji
Opis:: Magnetooptical properties of (Ga,Fe)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the growth conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism. Possible reasons for differences in magnetic response determined by magnetic circular dichroism and SQUID measurements are discussed.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 921-923
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja