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    Wyświetlanie 1-11 z 11
    Tytuł:
    A Study on Discharge Characteristics by Using MF and RF Power in Remote Dielectric Barrier Discharge
    Autorzy:
    Kim, D.
    Shim, Y.
    Kim, H.
    Han, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398758.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.77.Bn
    Opis:
    We have developed an atmospheric pressure plasma apparatus of remote dielectric barrier discharge (RDBD) applicable for a large area. We have systematically studied the characteristics of medium frequency (MF, 40 kHz) and radio frequency (RF, 13.56 MHz) discharge using an optical emission spectroscope. Nitrogen (N₂) and argon (Ar) gases were used in the MF and RF discharge excitation, respectively, in a mixture with clean dry air (CDA). The peak of oxygen radical (O*₂) appears at 259.3 nm when the RDBD is employed. Furthermore, intensive peaks are observed at gas ratios of N₂:CDA=100:1 in MF excitation and at gas ratios of Ar:CDA=70:0.5 in RF discharge excitation. On the other hand, the contact angle shows about 5° in PET samples after the RDBD treatment using the RF and MF discharge excitation. Surface analyses of polyethylene terephthalate (PET) samples were carried out using an atomic force microscope and X-ray photoelectron spectroscope.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 707-710
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors
    Autorzy:
    Kim, D.
    Kim, G.
    Jeon, S.
    Cho, M.
    Choi, H.
    Kim, M.
    Lee, D.
    Kim, J.
    Eom, G.
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1537752.pdf
    Data publikacji:
    2010-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    78.55.Cr
    81.05.Ea
    Opis:
    Multi-stacked InAs QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 6; 941-944
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
    Autorzy:
    Kim, G.
    Jeon, S.
    Cho, M.
    Choi, H.
    Kim, D.
    Kim, M.
    Kwon, Y.
    Choe, J.
    Kim, J.
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535820.pdf
    Data publikacji:
    2010-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    68.37.Ps
    78.55.Cr
    78.67.Hc
    Opis:
    The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 4; 673-676
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Molding Condition on Waviness Profile of GFRP Composites in Compression Molding
    Autorzy:
    Kim, J.
    Kim, H.
    Lee, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399878.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Lg
    81.05.Qk
    88.30.mj
    Opis:
    During compression molding of glass fiber reinforced plastic composites, annealing and quenching experiment is conducted by changing pre-heating and cooling method. As results, major cause of unevenness that affects waviness profile (winding) is the shrinkage of matrix during holding and cooling process. Waviness profile of the surface on molding in glass fiber reinforced plastic composites will be lower when holding pressure load is higher, mold temperature is lower during demolding, and cooling rate is slower. In addition, surface roughness of moldings is depending on holding pressure load compared with mold temperature. According to molding condition of glass fiber reinforced plastic composites, waviness profile of surface can be quantitatively estimated using the proposed equation.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 337-340
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optical Properties of Hydrothermally Synthesized ZnO and $Zn_{0.99}O:Eu^{3+}$ Powders
    Autorzy:
    Park, K.
    Hakeem, D.
    Kim, J.
    Kim, Y.
    Kim, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398243.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.55.Hx
    78.55.Et
    Opis:
    The structural and optical properties of the ZnO and $Zn_{0.99}O:Eu^{3+}$ powders synthesized by the hydrothermal method at two different temperatures (150°C and 250°C) were studied. The ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 150 and 250°C showed rod- and flower-like morphologies, respectively. The as-synthesized and annealed ZnO and $Zn_{0.99}O:0.01Eu^{3+}$ powders formed the wurtzite crystal structure and P6₃mc space group. The crystallite size of the as-synthesized and annealed ZnO powders increased by the incorporation of $Eu^{3+}. The photoluminescence properties of annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders were substantially improved by controlling the synthesis temperature. The annealed $Zn_{0.99}O:0.01Eu^{3+}$ powders synthesized at 250°C displayed much stronger emission intensity than those at 150°C.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 902-906
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method
    Autorzy:
    Kim, M.
    Yim, K.
    Kim, S.
    Nam, G.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491351.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.20.Fw
    78.66.Hf
    Opis:
    Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy $(E_{U})$ was changed inversely with optical band gap of the indium-doped ZnO thin films.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 217-220
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO Nanorods on Nanofibrous ZnO Seed Layers by Hydrothermal Method and Their Annealing Effects
    Autorzy:
    Yim, K.
    Jeon, S.
    Kim, M.
    Kim, S.
    Nam, G.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491348.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.Lm
    78.55.Et
    Opis:
    ZnO nanorods were grown by using the hydrothermal method on p-type Si (100) substrates with nanofibrous ZnO seed layers. Before the ZnO nanorods growth, nanofibrous ZnO seed layers were spin-coated onto the Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. The fibrous ZnO nanorods is possible due to the surface morphology of the nanofibrous ZnO seed layers. To investigate annealing effects of the ZnO nanorods, the post-annealing process was carried out at various temperatures ranging from 300 to 700C under argon conditions. The structural and optical properties of the ZnO nanorods were also affected by the post-annealing treatment.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 214-216
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer
    Autorzy:
    Kim, M.
    Jin, S.
    Choi, H.
    Kim, G.
    Yim, K.
    Kim, S.
    Nam, G.
    Yoon, H.
    Kim, Y.
    Lee, D.
    Kim, Jin
    Kim, Jong
    Leem, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505152.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    81.15.Gh
    Opis:
    A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × $10^{19} cm^{-3}$ was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 875-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Surface Investigations of Selected Materials by Low-Energy Ion Scattering Technique
    Autorzy:
    Goc-Jagło, D.
    Sitko, D.
    Jagło, G.
    Kim-Ngan, N.-T. H.
    Soszka, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047339.pdf
    Data publikacji:
    2007-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Rh
    71.20.Be
    71.20.Eh
    77.80.Bh
    Opis:
    Surfaces of three selected materials were investigated by means of low-energy ion-scattering technique: (1) the magnetite (Fe$\text{}_{3}$O$\text{}_{4}$) exhibiting the so-called Verwey transition (T$\text{}_{V}$(bulk)=125 K) accompanied by a small cubic-monoclinic crystal distortion, (2) the intermetallic compound NdMn$\text{}_{2}$ undergoing an antiferromagnetic-paramagnetic phase transition (T$\text{}_{N}$=104 K) accompanied by a large crystal distortion with a volume change of 1%, and (3) the typical insulator BaTiO$\text{}_{3}$ with two structural transitions below 300 K. The primary energy of the (Ne$\text{}^{+}$, Ar$\text{}^{+}$) ion beam was in the range of 4-8 keV, and the low-energy ion-scattering spectra were collected in the temperature range of 85-300 K. A large influence from the Verwey transition on the neutralization and re-ionization of scattered ions from magnetite surface was observed, while no visible change at the magnetic phase transition in NdMn$\text{}_{2}$ was revealed in the low-energy ion-scattering spectra. A strong dependence of the characteristics of the low-energy ion-scattering spectra on the irradiated time was observed for BaTiO$\text{}_{3}$ indicating that this surface was heavily charged by ion bombardments.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 5; 763-771
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of NdBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ Superconducting Thin Films on SrTiO$\text{}_{3}$(100) and LaSrGaO$\text{}_{4}$(100) Substrates
    Autorzy:
    Park, J.-C.
    Ha, D. H.
    Kim, I.-S.
    Park, Y.K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964239.pdf
    Data publikacji:
    1997-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.76.Bz
    Opis:
    NdBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ superconducting thin films were grown on SrTiO$\text{}_{3}$(100) and LaSrGaO$\text{}_{4}$(100) substrates by off-axis rf sputtering and pulsed laser deposition. The effects of several deposition parameters, e.g. gas pressure, substrate temperature and energy density were studied. Thin films grown by off-axis rf sputtering were highly c-axis oriented, but those by pulsed laser deposition were predominantly a-axis oriented under our deposition conditions. However, the c-axis oriented portion for the films grown by pulsed laser deposition was increased by increasing the temperature above 800°C. T$\text{}_{c(zero)}$ was 87 K and 83 K for the c- and a-axis oriented films respectively. The critical current density of c-axis oriented films was 10$\text{}^{6}$-10$\text{}^{7}$ A/cm$\text{}^{2}$ below 60 K.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 1; 105-114
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Second Harmonic Generation, Beam Dynamics and Spatial Soliton Generation in Periodically Poled KTiOPO$\text{}_{4}$
    Autorzy:
    Kim, H.
    Jankovic, L.
    Stegeman, G.
    Carrasco, S.
    Torner, L.
    Katz, M.
    Eger, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035660.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.65.Jx
    42.65.Ky
    42.65.Tg
    Opis:
    Spatial solitons were investigated in periodically poled KTiOPO$\text{}_{4}$ under conditions of second harmonic generation and many new features associated with soliton generation in quasi-phase-matched samples were observed. The effects on the second harmonic generation tuning curves of the beam narrowing mechanisms responsible for soliton generation were found to be dramatic. It was demonstrated experimentally that the mutual collapse of the fundamental and harmonic beams is a complex phenomenon.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 2-3; 107-119
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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