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Tytuł:
Photo-ESR and Absorption Studies of Antisite Defects in GaP
Autorzy:
Palczewska, M.
Jasiński, J.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1876158.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
Photo-ESR and optical absorption measurements were done on annealed neutron irradiated GaP crystals. The position of paramagnetic gallium anti-site level in GaP energy gap has been determined. Additionally, the position of paramagnetic phosphorus antisite level, earlier determined in the paper of Kruger and Alexander, has been confirmed. Moreover, unusual in ESR experiments temperature dependence of phosphorus antisite amplitude in neutron irradiated GaP crystals has been explained.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 461-464
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC
Autorzy:
Wysmołek, A.
Baranowski, J. M.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1934050.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.20.-e
78.60.Kn
Opis:
We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 957-960
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Model of Hopping between Deep Centers in Low Temperature GaAs
Autorzy:
Korona, K. P.
Kamińska, M.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1872627.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.50.+t
72.80.Ey
Opis:
A model explaining hopping conductivity via EL2 deep centers in low temperature GaAs is presented. It is proposed that the wave function of the EL2 center consists of a localized part and of an external one. The model can describe such features as large wave function radius of hopping centers, changes of the conductivity during transition of EL2 to the metastable state and a high potential fluctuation amplitude.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 337-340
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Antisites Defects in GaP
Autorzy:
Jasiński, J.
Kamińska, M.
Palczewska, M.
Jurkiewicz-Wagner, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929675.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
ESR, optical, and transport measurements were done on neutron-irradiated GaP crystals subjected to thermal annealing. The behavior of two dominant paramagnetic defects: phosphorus antisite PP4 and WA1 [1] was followed. ESR signal similar to WA1 was earlier attributed to the defect related with gallium antisite [2]. Our thermal annealing experiments supported such attribution. Apart from that, the obtained results indicated that two dominant absorption bands in neutron-irradiated GaP with maxima at 0.79 and 1.13 eV [1] were not connected with PP$\text{}_{4}$ or WA1 defects. However, one of these paramagnetic defects (or two of them) were responsible for hopping transport in n-irradiated GaP crystals.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 579-582
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition
Autorzy:
Suchanek, B.
Palczewska, M.
Pakuła, K.
Baranowski, J.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968425.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.61.Ey
Opis:
Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10$\text{}^{17}$ cm$\text{}^{-1}$ and mobility up to 500 cm$\text{}^{2}$/(V s) were achieved whereas hole concentration up to 7×10$\text{}^{17}$ cm$\text{}^{-3}$ and mobility about 16 cm$\text{}^{2}$/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g$\text{}_{⊥}$=1.9487 and g$\text{}_{∥}$=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1001-1004
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Competition of Radiation Processes in 6H-SiC Observed by Luminescence
Autorzy:
Wysmołek, A.
Mroziński, P.
Dwiliński, R.
Vlaskina, S.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1873137.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.60.Kn
Opis:
We report on the results of photoluminescence and thermoluminescence measurements of various 6H-SiC crystals. At low temperature in all n-type samples two bands with maxima at 2.7 eV (blue) and 1.8 eV (orange) were detected. In the p-type material only blue band was observed. The measurements performed at a broad range of temperatures showed totally different behaviour of photoluminescence intensity of both bands. The presented results could be explained in the model assuming well established donor-acceptor pair recombination for the blue band emission and the conduction band - deep defect transition for the orange band. The proposed model was confirmed by thermoluminescence measurements of the orange band which showed peaks at 30 K, 80 K, 100 K, 150 K attributed to ionization of subsequent shallow donor levels.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 437-440
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nature of Donors in SiC
Autorzy:
Suchanek, B.
Dwiliński, R.
Kamińska, M.
Palczewska, M.
Vlaskina, S.
Powiązania:
https://bibliotekanauki.pl/articles/1872293.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Da
Opis:
6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 321-324
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Defects in Low-Temperature GaAs
Autorzy:
Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence Study of Bulk GaN Doped with Beryllium
Autorzy:
Jaworek, M.
Wysmołek, A.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2043722.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
71.55.-i
71.35.-y
Opis:
Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 705-710
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Optical Properties of Highly Non-stoichiometric GaAs
Autorzy:
Kurpiewski, A.
Korona, K.
Kamińska, M.
Palczewska, M.
Jagadish, C.
Williams, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876991.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.90.+f
78.30.Er
Opis:
The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorption coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 518-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On GaN Crystallization by Ammonothermal Method
Autorzy:
Dwiliński, R.
Baranowski, J. M.
Kamińska, M.
Doradziński, R.
Garczyński, J.
Sierzputowski, L.
Powiązania:
https://bibliotekanauki.pl/articles/1950744.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Dn
Opis:
GaN crystals are grown using ammonothermal method at pressures below 5 kbar and temperatures below 550°C. In this method, GaN is synthesised from high purity metallic gallium. The main role in the low temperature GaN crystallization is played by the chemically active and dense ammonia and dissolved mineralizer. Morphology of the obtained crystals as well as solubility experiments prove that gallium nitride is dissolved and crystallised from solution. Physical properties of GaN crystals obtained using ammonothermal method depend on the growth conditions and the type of mineralizer. All GaN samples reveal very intensive photoluminescence, also at room temperature. The spectra of crystals grown with lithium compound mineralizer are shifted towards higher energies in comparison to crystals grown with potassium based mineralizer. At helium temperatures, phosphorescence is also observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 763-766
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP
Autorzy:
Jasiński, J.
Palczewska, M.
Korona, K.
Kamińska, M.
Bourret, E. D.
Elliot, G.
Powiązania:
https://bibliotekanauki.pl/articles/1923836.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and alter neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect P$\text{}_{Ga}$ introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of P$\text{}_{Ga}$ and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than 4 × 10$\text{}^{16}$ cm$\text{}^{-2}$.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 829-832
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Magnetic Anisotropy in Bulk GaMnN:Mg Crystals
Autorzy:
Gosk, J.
Zając, M.
Kamińska, M.
Twardowski, A.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2036861.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
75.30.Gw
75.50.Pp
Opis:
Magnetic properties of bulk wurtzite n-type GaMnN and highly resistive GaMnN:Mg monocrystals were studied for the magnetic field applied parallel and perpendicular to the crystal hexagonal c-axis. Magnetization of both types of samples reveals paramagnetic behavior. However, for n-type GaMnN isotropic magnetization was observed which is in agreement with Mn d$\text{}^{5}$ configuration. On the other hand, GaMnN co-doped with Mg shows large magnetic anisotropy which suggests Mn to be in nonspherical d$\text{}^{4}$ or d$\text{}^{3}$ configuration.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 665-669
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MnAs Nanocrystals Embedded in GaAs
Autorzy:
Kwiatkowski, A.
Wasik, D.
Kamińska, M.
Twardowski, A.
Dłużewski, P.
Borysiuk, J.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811951.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.-g
75.75.+a
Opis:
Magnetic properties of MnAs nanocrystals embedded in GaAs are analyzed in the frame of phenomenological model proposed by Sasaki for ferritin superparamagnets. Our calculations explain qualitatively experimental data of magnetization versus temperature, obtained according to zero-field-cooled and field-cooled protocols. They show dynamics of magnetization of MnAs nanocrystals in range of temperature from 10 K to 320 K. There is transition from state in which very slow dynamics is observed (frozen state) to state in which dynamics is fast (quasi-superparamagnetic state).
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1207-1211
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MnAs Nanocrystals Embedded in GaAs
Autorzy:
Kwiatkowski, A.
Borysiuk, J.
Bożek, R.
Wasik, D.
Kamińska, M.
Sadowski, J.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2046925.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.+w
61.82.Fk
68.37.Rt
68.37.Lp
74.25.Ha
Opis:
We report on cross-sectional transmission electron microscopy and magnetic force microscopy studies performed on self-organized MnAs nanoclusters embedded in GaAs. It was found that 10÷20 nm large MnAs ferromagnetic nanocrystals were formed during rapid thermal annealing of Ga$\text{}_{1-x}$Mn$\text{}_{x}$As layers at 600ºC, leading to magnetic contrasts in magnetic force microscopy images.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 233-236
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 71

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