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Wyświetlanie 1-15 z 19
Tytuł:
Dipolar Contributions to Magnetoelastic Energy of Crystal Grains with Interfaces
Autorzy:
Szumiata, T.
Żuberek, R.
Szymczak, H.
Gonzalez, J.
Powiązania:
https://bibliotekanauki.pl/articles/2013177.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.80.+q
68.90.+g
78.66.Jg
Opis:
The magnetic anisotropy and magnetostriction in nanocrystalline grains in non-magnetic or magnetic matrix (nanoparticles or nanocrystalline materials) differ from their bulk properties. The interactions between atoms at the interface play the important role in these magnetic properties. In this paper the magnetic dipolar contribution to magnetostriction energy has been calculated for spherical crystal grains (of bcc and fcc symmetry) with interface layer of atoms possessing different magnetic moment. Total magnetoelastic energy of the sphere-interface system is a sum of magnetoelastic energy of the sphere, energy of the interactions between the sphere and the interface and also the energy of the interface. It was shown that magnetoelastic energy depends on the sphere size and interface thickness.
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 531-534
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Joule Heating Preannealing Effect in the Coercivity Field and Magnetostriction Constant of Co$\text{}_{66}$Fe$\text{}_{4}$Mo$\text{}_{2}$Si$\text{}_{16}$B$\text{}_{12}$ Alloy
Autorzy:
Garcia Tello, P.
González, J.
Blanco, J.
Żuberek, R.
Powiązania:
https://bibliotekanauki.pl/articles/2013239.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Kj
75.30.Gw
75.80.+q
Opis:
The effect of thermal treatments (by the Joule heating and conventional annealing) on the coercivity and saturation magnetostriction constant in the amorphous and nanocrystalline Co$\text{}_{66}$Fe$\text{}_{4}$Mo$\text{}_{2}$Si$\text{}_{16}$B$\text{}_{12}$ alloy is reported. It is noticeable the near insensibility to the external stress of coercive field and anisotropy field (leading to extremely low value of magnetostriction 1.5×10$\text{}^{-8}$) achieved after the Joule heating by two steps (first one to relax the internal stresses and the second one to develop a fine nanocrystalline structure).
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 595-598
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Transmission through Graphene Bilayer Flakes
Autorzy:
Chico, L.
González, J.
Santos, H.
Pacheco, M.
Brey, L.
Powiązania:
https://bibliotekanauki.pl/articles/1419511.pdf
Data publikacji:
2012-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
73.63.-b
Opis:
We investigate the electronic transport properties of a bilayer graphene flake contacted by two monolayer nanoribbons. This finite-size bilayer flake can be built by overlapping two semi-infinite ribbons. We study and analyze the electronic behavior of this structure by means of a tight-binding method and a continuum Dirac model. We have found that the conductance oscillates markedly between zero and the maximum value of the conductance, allowing for the design of electromechanical switches.
Źródło:
Acta Physica Polonica A; 2012, 122, 2; 299-303
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current Annealings and Magnetoimpedance in Co-Fe Amorphous Ribbons
Autorzy:
González, J.
Domínguez, L.
Blanco, J. M.
Aragoneses, P.
Valenzuela, R.
Powiązania:
https://bibliotekanauki.pl/articles/1956111.pdf
Data publikacji:
1997-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.60.Nt
75.50.Kj
Opis:
Amorphous ribbons of composition (Co$\text{}_{0.95}$Fe$\text{}_{0.05}$)$\text{}_{100-x}$Si$\text{}_{0.4x}$ B$\text{}_{0.6x}$, with x=25 and 30 were prepared by the melt-spinning technique. Current annealings at 600 mA were performed for annealing times between 15 s and 60 min. The magnetoimpedance response was investigated by submitting the ribbons to ac currents at frequencies in the 10-200 kHz range, with amplitudes between 1 and 15 mA (rms), and measuring their voltage response. The observed results show that a transverse anisotropy is induced by the thermal treatments, which can be evaluated by means of the magnetoimpedance effect. Due to its lower Curie temperature, the x=30 ribbons exhibited lower sensibility to the current annealings.
Źródło:
Acta Physica Polonica A; 1997, 91, 2; 451-454
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Engineering of Magnetic Properties of Magnetic Microwires
Autorzy:
Zhukov, A.
Ipatov, M.
Blanco, J.
Corte-León, P.
Olivera, J.
Gonzalez, J.
Zhukova, V.
Powiązania:
https://bibliotekanauki.pl/articles/1029739.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.60.Ej
75.60.Jk
Opis:
We present an overview of the factors affecting soft magnetic properties, fast domain wall propagation and giant magnetoimpedance (GMI) effect in thin amorphous wires. The magnetoelastic anisotropy is one of the most important parameters that determine the magnetic properties of glass-coated microwires and therefore annealing can be very effective for manipulation the magnetic properties of amorphous ferromagnetic glass-coated microwires. Increasing of DW velocity in Fe-rich and Fe-Ni based (low Ni content) microwires is achieved after annealing. After heat treatment of Co-rich microwires we can observe transformation of inclined hysteresis loops to rectangular and coexistence of fast magnetization switching and GMI effect in the same sample. On the other hand stress annealing of Fe- and Co-rich microwires allows achievement of considerable magnetic softening and GMI effect enhancement.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 321-328
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Monte Carlo vs. Density Functional Methods for the Prediction of Relative Energies of Small Si-C Clusters
Autorzy:
Gonzalez Szwacki, N.
Majewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1492983.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.15.E-
36.40.-c
Opis:
In the present paper, we assess the accuracy of popular and widely used approaches based on density functional theory by relating them to the most accurate at present quantum Monte Carlo calculations. As the test case, we consider the relative stability of small $Si_{n}C_{m}$ isomers. We find out that none of the studied DFT approaches employing local, semilocal, or even hybrid functionals are able to predict correctly the relative stability of the isomers.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 964-966
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability
Autorzy:
Pérez, S.
Mateos, J.
González, T.
Powiązania:
https://bibliotekanauki.pl/articles/1505462.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Fg
07.57.Hm
73.40.Kp
Opis:
By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs slot diodes is predicted when the applied bias exceeds the threshold for intervalley transfer. Such high frequency is attained by the presence of a Gunn-like effect in the recess-to-drain region of the device channel whose dynamics is controlled by ballistic Γp valley electrons. In this work we explain the mechanism at the origin of this effect and also the influence of the bias conditions, δ-doping, recess-to-drain distance and recess length on the frequency of the ultrafast Gunn-like oscillations. The simulations show that a minimum value for the δ-doping is necessary to have enough carrier concentration under the recess and allow the oscillations to emerge. Finally, we show that shortening the devices (small recess and recess-to-drain lengths) increases the oscillation frequency, so provides an interesting frequency tunability of this THz source.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 111-113
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Energetics of Fragments of the Planar α and β Boron Sheets
Autorzy:
Gonzalez Szwacki, N.
Tarkowski, T.
Majewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1398547.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.-w
68.65.-k
73.22.-f
Opis:
Large scale first principles calculations based on density functional theory and using hybrid exchange-correlation functionals have been performed in order to study the structural properties and the relative stability of fragments of the planar α and β boron sheets. Based on the considered structures, we show that, in contrast to the fragments of the α -sheet, all the fragments of the β -sheet, having more than ≈30 atoms, are fully planar regardless of their shape. We conclude that the β -sheet is the only planar boron sheet reported so far that retains planarity even if it is reduced to relatively small fragments.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-148-A-149
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization
Autorzy:
Vasallo, B.
González, T.
Pardo, D.
Mateos, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505612.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
85.30.Tv
Opis:
The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different mobilities, and electrons are transferred between both of them by changing the gate voltages in differential mode. Consequently, the drain current is modulated while keeping the total carrier density constant, thus in principle avoiding capacitance charging/discharging delays. However, the low values taken by the transconductance, as well as the high capacitance between the two gates in differential-mode operation, lead to a deficient dynamic performance. This behavior can be geometrically optimized by increasing the mobility difference between the two channels, by increasing the channel width and, mainly, by reducing the gate length, with a higher immunity to short channel effects than the traditional architectures.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 193-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
Autorzy:
Vasallo, B.
Rodilla, H.
González, T.
Lefebvre, E.
Moschetti, G.
Grahn, J.
Mateos, J.
Powiązania:
https://bibliotekanauki.pl/articles/1506159.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
85.30.Tv
Opis:
We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage $V_{DS}$ is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current $I_{D}$ increases, leading to the kink effect in the I-V characteristics.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 222-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Properties of MnTe, ZnTe, and ZnMnTe
Autorzy:
Gonzalez Szwacki, N.
Przeździecka, E.
Dynowska, E.
Bogusławski, P.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038244.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.50.Ah
75.50.Pp
61.10.-i
Opis:
Structural properties of ZnTe, MnTe, and Mn$\text{}_{1-x}$Zn$\text{}_{x}$Te alloy with zinc-blende, NiAs, and wurtzite phases were investigated by ab initio calculations. The calculated structural properties are in good agreement with the available experimental data. Theory predicts that the zinc-blende phase is more stable than wurtzite for all compositions. Mn$\text{}_{1-x}$Zn$\text{}_{x}$Te samples with 0.01 < x < 0.20 were grown by MBE. X-ray analysis of their crystalline structure revealed the presence of zinc-blende, wurtzite, and NiAs phases. The dominant phase changes from NiAs for the sample with x=0.01 to wurtzite for x=0.20. The observed stabilization of the wurtzite phase is possibly due to the hexagonal structure of the MnTe buffer.
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 233-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of Divalent (Ni,Sn,Zn)- Tetravalent (Ru,Sn) Ionic Mixtures of Substituted Ba Ferrite
Autorzy:
Sláma, J.
Grusková, A.
González Angeles, A.
Šoka, M.
Dosoudil, R.
Powiązania:
https://bibliotekanauki.pl/articles/1367766.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Gg
75.50.Vv
77.22.Ej
Opis:
The drop of coercivity, while preserving the saturation magnetic polarisation $J_{S}$ of substituted M-type Ba hexaferrites with composition $BaFe_{12-2x}(Me_{1}Me_{2})_{x}O_{19}$, was studied. Divalent $Me_{1}$=Ni, Zn, Sn and tetravalent $Me_{2}$=Ru, Sn ionic combinations were used in various compounds. Mössbauer spectroscopy was used to reveal sites of replacement of the $Fe^{3+}$ ions by $Ru^{4+}$ and $Sn^{4+}$. The $Ni^{2+}$, $Zn^{2+}$ and $Sn^{2+}$ occupation sites were identified as well. Strong drop of coercivity difference Δ $H_{c}(x)$ near x=0.1 and slight decrease of Δ $H_{c}(x)$ close to x=0.3 was obtained for suitable coupling of $Me_{1}^{2+}$ and $Me_{2}^{4+}$ ions.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 172-173
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electromagnetic Properties of Substituted Barium Hexaferrites
Autorzy:
Sláma, J.
Grusková, A.
Jančárik, V.
Štofka, M.
González-Angeles, A.
Powiązania:
https://bibliotekanauki.pl/articles/1813950.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.-y
75.50.Vv
81.20.Ev
81.20.Ka
Opis:
Substituted M-type ferrite $BaFe_{12-2x}(Me_1Me_2)_xO_{19}$, 0≤x≤0.6 was prepared by both mechanical alloying and precursor method, where $Me_1$ = Co, Ni, Zn, Sn and $Me_2$ =Ru, Ti, Zr, Sn. Magnetic phase purity, change of saturation polarization, Curie temperature, coercivity and magnetic susceptibility was studied as function of x. Attention was focused to results obtained for $(NiRu)_x,$ $(ZnRu)_x,$ and $(SnRu)_x$ mixtures with low doping ratio x.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 609-612
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Residual Strain and Electrical Activity of Defects in Multicrystalline Silicon Solar Cells
Autorzy:
Martínez, O.
Mass, J.
Tejero, A.
Moralejo, B.
Hortelano, V.
González, M.
Jiménez, J.
Parra, V.
Powiązania:
https://bibliotekanauki.pl/articles/1198419.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Am
61.72.Ff
88.40.jj
Opis:
The growth process by casting methods of multi-crystalline Si results in a crystalline material with, among other defects, a high density of dislocations and grain boundaries. Impurity incorporation and their gathering around grain boundaries and dislocations seem to be the main factor determining the electrical activity of those defects, which limit the minority carrier lifetime. In this work, we analyze multi-crystalline Si samples by combining etching processes to reveal the defects, Raman spectroscopy for strain measurements, and light beam induced current measurements for the localization of electrically active defects. In particular, we have explored the etching routes capable to reveal the main defects (grain boundaries and dislocation lines), while their electrical activity is studied by the light beam induced current technique. We further analyze the strain levels around these defects by Raman micro-spectroscopy, aiming to obtain a more general picture of the correlation between residual stress and electrical activity of the extended defects. The higher stress levels are observed around intra-grain defects associated with dislocation lines, rather than around the grain boundaries. On the other hand, the intra-grain defects are also observed to give dark light beam induced current contrast associated with a higher electrical activity of these defects as compared to the grain boundaries.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1013-1016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process
Autorzy:
Tejero, A.
Tupin, E.
González, M.
Martínez, O.
Jiménez, J.
Belouet, C.
Baillis, C.
Powiązania:
https://bibliotekanauki.pl/articles/1198416.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Am
61.72.Ff
88.40.jj
Opis:
In the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1006-1009
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 19

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