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Wyszukujesz frazę "Bąk, K." wg kryterium: Wszystkie pola

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    Wyświetlanie 1-10 z 10
    Tytuł:
    Growth of Ternary and Quaternary ZnSe Compounds with Transition Metals by Chemical Vapor Transport
    Autorzy:
    Janik, E.
    Grasza, K.
    Mycielski, A.
    Bąk-Misiuk, J.
    Kachniarz, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929755.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Bk
    78.55.Et
    Opis:
    Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition metals at the temperature far below the melting point and phase transition temperature. The large crystals of ZnMnSe, ZnFeSe, ZnNiSe and ZnFeSSe were obtained. The technological parameters and shape of the quartz reactor were chosen for growth of a large crystal by self-nucleation; the transparent quartz furnace enabled the control of nucleation by visual observation. The parameters of crystal growth were determined. The crystal quality was estimated by X-ray diffraction method. The composition of crystals was determined by electron microprobe analysis and energy dispersive X-ray fluorescence analysis.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 785-788
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure
    Autorzy:
    Bąk-Misiuk, J.
    Adamczewska, J.
    Misiuk, A.
    Regiński, K.
    Wierzchowski, W.
    Wieteska, K.
    Kozanecki, A.
    Kuritsyn, D.
    Glukhanyuk, W.
    Trela, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030644.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    68.55.Ln
    Opis:
    The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 689-699
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MBE Growth and Properties of GaMnAs(100) Films
    Autorzy:
    Sadowski, J.
    Domagała, J.
    Bąk- Misiuk, J.
    Świątek, K.
    Kanski, J.
    Ilver, L.
    Oscarsson, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992165.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    79.60.Bm
    71.55.Eq
    Opis:
    We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 509-513
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A High-Energy Ball Milling as a Useful Technique for the Synthesis of $CaCu_3Ti_4O_{12}$ Electroceramics
    Autorzy:
    Dulian, P.
    Bąk, W.
    Kajtoch, Cz.
    Wieczorek-Ciurowa, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375214.pdf
    Data publikacji:
    2014-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.22.Gm
    81.05.-t
    Opis:
    This paper shows that $CaCu_3Ti_4O_{12}$ (CCTO) can be synthesized through the high-energy ball milling of CaO, CuO and $TiO_2$ powders. The dielectric characterization of CCTO obtained mechanochemically as well as, for comparison, by a high-temperature method is presented. Moreover, it is illustrated that zirconium oxide in contrast to a metallic iron generated during milling processes improves the properties of CCTO in terms of ceramic capacitors.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 4; 931-937
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Blocking of Phase Transitions in Liquid Crystal 5*CB (Isopentylcyanobiphenyl) as a Result of Surface Interactions in the Nanomembranes
    Autorzy:
    Bąk, A.
    Chłędowska, K.
    Inglot, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402554.pdf
    Data publikacji:
    2015-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.30.-v
    64.70.pp
    68.08.-p
    77.22.Gm
    Opis:
    In this paper we present the results of dielectric measurements of liquid crystal (LC) 5*CB arranged in porous matrices with a pore diameter of 100 and 20 nm. We analyse the effect of the surface interactions on the dynamics of the molecules. The results are compared with the results for bulk 5*CB. The most important observation is the blocking of the phase transition of 5*CB into the solid phase in the matrix with pore diameter of 20 nm.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 2; 147-149
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of Si:V Annealed under Enhanced Hydrostatic Pressure
    Autorzy:
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Barcz, A.
    Bak-Misiuk, J.
    Chow, L.
    Vanfleet, R.
    Prujszczyk, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504150.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Dd
    61.72.uf
    64.75.Qr
    66.30.Xj
    81.40.Xj
    Opis:
    It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using $V^{+}$ doses, D = (1-5) × $10^{15} cm^{-2}$, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of $VSi_2$ are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of $V^{+}$ and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 196-199
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
    Autorzy:
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Londos, C.
    Andrianakis, A.
    Bak-Misiuk, J.
    Yang, D.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539028.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.72.-y
    61.72.Ff
    61.72.uf
    62.50.-p
    Opis:
    Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 344-347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Doping on Ga$\text{}_{1-x}$Al$\text{}_{x}$As Structural Properties
    Autorzy:
    Bąk-Misiuk, J.
    Domagała, J.
    Paszkowicz, W.
    Trela, J.
    Żytkiewicz, Z. R.
    Leszczyński, M.
    Regiński, K.
    Muszalski, J.
    Härtwig, J.
    Ohler, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964092.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Ea
    81.40.-z
    68.55.Ln
    61.10.Nz
    Opis:
    The microstructure of Ga$\text{}_{1-x}$Al$\text{}_{x}$As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 911-915
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and Structure of Czochralski Silicon Implanted with $H_{2}^{+}$ and Annealed under Enhanced Hydrostatic Pressure
    Autorzy:
    Kulik, M.
    Kobzev, A.
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Bak-Misiuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538976.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    61.72.uf
    66.10.C-
    61.80.Jh
    81.20.-n
    82.80.Yc
    85.40.-e
    Opis:
    Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as $H^{+}$) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with $H_{2}^{+}$; fluence D = 1.7 × $10^{17} cm^{-2}$, energy E = 50 keV (projected range of $H_{2}^{+}$, $R_{p}(H)$ = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 332-335
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment
    Autorzy:
    Wieteska, K.
    Misiuk, A.
    Prujszczyk, M.
    Wierzchowski, W.
    Surma, B.
    Bąk-Misiuk, J.
    Romanowski, P.
    Shalimov, A.
    Capan, I.
    Yang, D.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812256.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.c-
    61.72.-y
    61.82.-d
    Opis:
    Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content $(c_O)$ up to $1.1×10^{18} cm^{-3}$, admixed with N or Ge (Si-N, c_N ≤ $1.2×10^{15} cm^{-3}$, or Si-Ge, $c_{Ge} ≈ 7×10^{17} cm^{-3}$, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 439-446
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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