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Wyświetlanie 1-7 z 7
Tytuł:
Present status and prospects of research in SINS on the modification of surface properties by pulsed plasma streams
Autorzy:
Langner, J.
Piekoszewski, J.
Stanisławski, J.
Werner, Z.
Powiązania:
https://bibliotekanauki.pl/articles/146758.pdf
Data publikacji:
2000
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
IONOTRON plasma injector
pulsed plasma processing
surface modification
Opis:
The paper presents examples of the most important results obtained in SINS during the last decade, interesting from the point of view of industrial applications. It also indicates some of the most prospective directions in research on modification of the surface properties of materials by means of pulsed plasma streams.
Źródło:
Nukleonika; 2000, 45, 3; 193-197
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An apparatus for sequential pulsed plasma beam treatment in combination with Arc PVD deposition
Autorzy:
Stanisławski, J.
Piekoszewski, J.
Richter, E.
Werner, Z.
Powiązania:
https://bibliotekanauki.pl/articles/147034.pdf
Data publikacji:
2002
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
Arc-PVD
interlayer
pulse plasma treatment
Opis:
A hybrid type of apparatus is described which enables one to form a thin multi-layer film on the surface of any kind of solid substrate. In one process, the surface is treated with a high intensity pulse plasma beam which introduces the chosen kind of atoms into the near-surface layer of the substrate. In the second process, following the first without breaking the vacuum, the coating is formed by arc PVD (physical vapour deposition) process. Two examples of coatings formed on metallic and ceramic substrates are presented.
Źródło:
Nukleonika; 2002, 47, 3; 119-122
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal evolution of solid targets irradiated by pulsed plasma beams
Autorzy:
Szymczyk, W.
Piekoszewski, J.
Werner, Z.
Szyszko, W.
Powiązania:
https://bibliotekanauki.pl/articles/147099.pdf
Data publikacji:
2002
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
computer simulation
heat flow
thermal evolution
Opis:
Thermal evolution of various targets irradiated with high intensity pulsed ion or plasma beams was determined by computer simulation i.e. by solving numerically one dimensional heat flow equation. The calculations were carried out using the adopted ETLIT computer code (Energy Transport in Laser Irradiated Targets) based on Finite Element Method. The surface temperature, melt depth and liquid duration were computed as a function of pulse energy density, pulse duration, melting temperature and thermal diffusivity of a given material. In particular, some examples are shown for such materials as: Cu, Al, Zn, Fe, Ti, Mo, W, and Al2O3. Various practical aspects of the obtained results are discussed, with a special attention given to less or no intuitively predictable dependencies.
Źródło:
Nukleonika; 2002, 47, 4; 163-166
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion implantation followed by laser/pulsed plasma/ion beam annealing : a new approach to fabrication of superconducting MgB2 thin films
Autorzy:
Piekoszewski, J.
Werner, Z.
Barlak, M.
Kolitsch, A.
Szymczyk, W.
Powiązania:
https://bibliotekanauki.pl/articles/146817.pdf
Data publikacji:
2008
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
MgB2
superconducting films
pulsed plasma annealing
Opis:
The paper presents a new approach to formation of superconducting MgB2 thin films: ion implantation followed by annealing in an unconventional second step treatment using pulsed laser, plasma, or ion beams. Merits and drawbacks of individual approaches are discussed.
Źródło:
Nukleonika; 2008, 53, 1; 7-10
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implanted manganese redistribution in Si after He+ irradiation and hydrogen pulse plasma treatment
Autorzy:
Werner, Z.
Pochrybniak, C.
Barlak, M.
Piekoszewski, J.
Korman, A.
Heller, R.
Szymczyk, W.
Bocheńska, K.
Powiązania:
https://bibliotekanauki.pl/articles/147018.pdf
Data publikacji:
2011
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
dilute magnetic semiconductors (DMS)
Mn-implanted Si
ion beam induced epitaxial crystallization
Opis:
Si-Mn alloy with a Mn content of a few percent is potentially a candidate for room temperature (RT) dilute magnetic semiconductor (DMS). However, the present methods of material manufacture suffer from problems with poor Mn solubility and thermodynamical limitations. We study a non-equilibrium method in which silicon is first implanted with 160 keV manganese ions to a dose of 1 × 1016 ions/cm2 and next either irradiated with 1.5 MeV 4He+ ions from the Warsaw Van de Graaff accelerator at 400°C or treated with high-energy hydrogen plasma pulses. Conclusion from Rutherford backscattering spectrometry (RBS) examination of the samples is that both approaches lead to recovery of crystalline surface layer with manganese occupying off-substitutional sites. The potential development of the method is discussed.
Źródło:
Nukleonika; 2011, 56, 1; 5-8
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interaction of nitrogen atoms in expanded austenite formed in pure iron by intense nitrogen plasma pulses
Autorzy:
Piekoszewski, J.
Sartowska, B.
Waliś, L.
Werner, Z.
Kopcewicz, M.
Prokert, F.
Stanisławski, J.
Kalinowska, J.
Szymczyk, W.
Powiązania:
https://bibliotekanauki.pl/articles/147989.pdf
Data publikacji:
2004
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
alfa-to-gamma phase transformation in iron
expanded austenite
intense nitrogen plasma pulses
Opis:
The paper presents the results of experiments on modification of pure iron by high-intensity nitrogen pulsed-plasma treatment. The duration of nitrogen plasma pulses is approximately 1 mi s, and the energy density amounts to about 5 J/cm2. Such pulses are capable to melt the surface layer of the substrate (1- 2 mi m) and to introduce a significant concentration of nitrogen into the molten layer. Nuclear reaction analysis (NRA), X-ray diffraction (XRD) and conversion electron Mössbauer spectroscopy (CEMS) were used for characterisation of the treated samples. The main results of the data analysis are as follows: it has been stated that such treatment leads to gradual transformation of initial alfa-phase into austenitic gamma structure in which expanded austenite gammaN is present. Treatment with 20 pulses results in almost complete transformation and introduces a retained dose of nitrogen estimated as 5.5 × 1017 N/cm2. The susceptibility for expansion of the lattice transformed to austenite in this way is smaller than in the case when the steel subjected to conventional nitriding is originally of austenite type. The analysis of the ratio of alfa to gammaN as a function of the nitrogen content provides a firm evidence that strong repulsion forces act between the first and the second nearest-neighbour nitrogen atoms in the fcc austenitic structure formed as a result of nitriding of pure iron by intense nitrogen plasma pulses.
Źródło:
Nukleonika; 2004, 49, 2; 57-60
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High - temperature oxidation resistance in yttrium implanted stainless steel
Autorzy:
Barlak, M.
Piekoszewski, J.
Werner, Z.
Sartowska, B.
Waliś, L.
Starosta, W.
Kierzek, J.
Kowalska, E.
Wilhelm, R. A.
Pochrybniak, C.
Woźnica, M.
Powiązania:
https://bibliotekanauki.pl/articles/146785.pdf
Data publikacji:
2012
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
high-temperature oxidation resistance
ion implantation
yttrium
Opis:
Austenitic AISI 304, 316L and ferritic 430 stainless steels were implanted with yttrium to fluences ranging between 1 x 1015 and 5 x 1017 ions/cm2. The samples were subjected to oxidation in air at a temperature of 1000 centigrade for a period of 100 h and next examined by stereoscopic optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX) and Rutherford back scattering spectrometry (RBS). The results obtained with the use of ion implantation are discussed.
Źródło:
Nukleonika; 2012, 57, 4; 473-476
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-7 z 7

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