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    Wyświetlanie 1-11 z 11
    Tytuł:
    Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
    Autorzy:
    Miasojedovas, S.
    Juršėnas, S.
    Kurilčik, G.
    Žukauskas, A.
    Springis, M.
    Tale, I.
    Yang, C. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041743.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    78.47.+p
    78.67.De
    Opis:
    We report on high-excitation luminescence spectroscopy of In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 256-260
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Optical and Photoelectrical Properties of ZnO Crystals
    Autorzy:
    Onufrijevs, P.
    Serevičius, T.
    Scajev, P.
    Manolis, G.
    Medvids, A.
    Chernyak, L.
    Kuokstis, E.
    Yang, C.
    Jarasiunas, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506285.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.15.+e
    78.45.+h
    78.30.Fs
    Opis:
    We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 274-276
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interaction of Magnetic Nanoparticles with Lyotropic Liquid Crystal Studied by AFM
    Autorzy:
    Tomašovičová, N.
    Yang, C.
    Balejčíková, L.
    Gdovinová, V.
    Kubovčíková, M.
    Hayryan, S.
    Hwang, I.
    Hu, Chin-Kun
    Kopčanský, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032211.pdf
    Data publikacji:
    2017-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.75.Fk
    87.14.em
    82.37.Gk
    Opis:
    In this work the interaction of lysozyme fibrils with magnetic particles has been studied by atomic force microscopy. The experiments were carried out for a better understanding of the binding process of such complex soft matter systems. The obtained results show that interaction between lysozyme fibrils and magnetic particles starts immediately after mixing them together. Moreover, the samples remain stable in duration of several days after preparation.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 4; 958-960
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis, Structure, Photoluminescence, and Raman Spectrum of Indium Oxide Nanowires
    Autorzy:
    Kim, H.
    Na, H.
    Yang, J.
    Lee,, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505485.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    78.55.-m
    Opis:
    Production of indium oxide $(In_2O_3)$ whiskers at a very low temperature of 650°C was reported. The synthetic route was comprised of a thermal heating process of a mixture of In and Mg powders. We have investigated the structural properties of the as-synthesized nanowires by using X-ray diffraction and scanning electron microscopy. The product consisted of one-dimensional nanowires, with a crystalline cubic structure of $In_2O_3$. The photoluminescence measurement with the Gaussian fitting exhibited visible light emission bands centered at 2.1 eV and 2.8 eV. The peaks of the Raman spectrum were indexed to the modes being associated with cubic $In_2O_3$.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 143-145
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Studies of Aluminum Nitride Nanowires
    Autorzy:
    Yang, J.
    Na, H.
    Kim, H.
    Kebede, M.
    Choi, R.
    Jeong, J.
    Lee, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505466.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    78.55.-m
    Opis:
    We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were obtained from both unannealed and annealed samples, the additional 2.1 eV peak was found from the annealed samples. We have suggested the possible emission mechanisms based on the assumption that both 2.45 eV peak and 2.1 eV peak are ascribed to the nitrogen vacancies. Annealing in N_2 environment exhibited lower intensities of 2.45 eV peak and 2.1 eV peak in comparison to those in Ar environment, presumably due to the suppression of nitrogen vacancies.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 125-127
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    U$\text{}_{P}$, 3U$\text{}_{P}$, 11U$\text{}_{P}$: Above-Threshold Ionization Revisited
    Autorzy:
    Yang, Baorui
    Schafer, K. J.
    Walker, B.
    Kulander, K. C.
    Dimauro, L. F.
    Agostini, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931385.pdf
    Data publikacji:
    1994-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    32.80.Fb
    31.90.+s
    32.80.Rm
    Opis:
    Angular distributions of very high energy photoelectrons from Xe and Kr, excited by a 50 ps, 1054 um laser, are presented. In Xe strong, narrow structures 45° off the polarization axis appear on above-threshold ionization peaks within a limited energy range centered around 9U$\text{}_{P}$, where U$\text{}_{P}$ is the intensity-dependent ponderomotive energy. Under the same conditions the effect is much weaker in krypton. These structures are discussed using a very simple classical model as well as sophisticated single active electron calculations and the Keldysh-Faisal-Reiss theory. We conclude these structures are the result of single-electron dynamics involving rescattering of a tunneling component of the continuum wave function.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 1; 41-50
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quest for Band Renormalization and Self-Energy in Correlated f-Electron Systems
    Autorzy:
    Durakiewicz, T.
    Riseborough, P.
    Batista, C.
    Yang, Y.
    Oppeneer, P.
    Joyce, J.
    Bauer, E.
    Graham, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538778.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.28.+d
    74.25.Jb
    Opis:
    Coexisting low-energy scales are observed in f-electron materials. The information about some of low-energy scales is imprinted in the electron self-energy, which can be measured by angle-resolved photoemission (ARPES). Such measurements in d-electron materials over the last decade were based on high energy- and momentum- resolution ARPES techniques used to extract the self-energy information from measured spectra. Simultaneously, many-body theoretical approaches have been developed to find a link between the self-energy and many-body interactions. Here we show the transcription of such methods from d-electrons to f-electrons by presenting the first example of low energy scales in the f-electron material $USb_2$, measured with synchrotron-based ARPES. The proposed approach will help in answering the fundamental questions about the complex nature of the heavy fermion state.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 264-267
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
    Autorzy:
    Misiuk, A.
    Wierzchowski, W.
    Wieteska, K.
    Londos, C.
    Andrianakis, A.
    Bak-Misiuk, J.
    Yang, D.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1539028.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.72.-y
    61.72.Ff
    61.72.uf
    62.50.-p
    Opis:
    Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 344-347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pulsed Power and Power Conditioning Capacitors
    Autorzy:
    Macdougall, F.
    Jow, T.
    Ennis, J.
    Yang, X.
    Yen, S.
    Cooper, R.
    Gilbert, J.
    Schneider, M.
    Naruo, C.
    Bates, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807873.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.32.Tt
    84.60.Ve
    Opis:
    A capacitor development effort focused on capacitors used in pulsed power and power conversion applications underwent at General Atomics Electronic Systems Inc. (GA-ESI) for decades. In recent years, funding for these efforts has accelerated the rate of development progress to the point where the time it takes to decrease the size of a capacitor by half has dropped from 10 years to 4 years. This progress made in pulsed power and power conversion capacitors will be described along with the performance characteristics of today's capacitors.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 989-991
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
    Autorzy:
    Juršėnas, S.
    Kuokštis, E.
    Miasojedovas, S.
    Kurilčik, G.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038100.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 567-573
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
    Autorzy:
    Juršėnas, S.
    Miasojedovas, S.
    Kurilčik, G.
    Liuolia, V.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Kuokštis, E.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041736.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 235-239
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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