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    Wyświetlanie 1-6 z 6
    Tytuł:
    Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD
    Autorzy:
    Wesołowski, M.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807649.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    81.05.Ea
    68.55.A-
    68.55.ag
    68.55.J-
    68.55.Nq
    Opis:
    Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-62-S-64
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Visible Light Emission from Porous Silicon
    Autorzy:
    Bugajski, M.
    Wesołowski, M.
    Lewandowski, W.
    Ornoch, J.
    Kątcki, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924257.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.65.-s
    Opis:
    The aim of this paper is the study of porous Si prepared by preferential anodic dissolution in concentrated HF acid solutions. Porous silicon layers exhibited extremely efficient luminescence in the 700-900 nm range at room temperature. Basic characteristics of this luminescence strongly suggest the intrinsic origin of the process, directly related to quantum confinement. The additional transmission-electron-microscopy and electron-diffraction studies - were performed to support hypothesis that luminescence originates from silicon nanostructures.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 914-918
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Influence of Pressure on the Roughness of InGaP Layers
    Autorzy:
    Dumiszewska, E.
    Knyps, P.
    Wesolowski, M.
    Teodorczyk, M.
    Strupinski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492628.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.dj
    78.30.Fs
    73.61.Ey
    81.10.-h
    Opis:
    Today, the technology of typical silicon-solar cells is fully developed and mature. In spite of its continuous improvements, the record efficiencies of 25.0% are approaching theoretical solar conversion limits of around 33.7%. Values much beyond this limit are likely to be achieved using III-V semiconductor compounds, electrical and optical properties are more suitable for solar energy conversion. They are the most promising candidates for realizing solar cells, which can achieve efficiencies of 50% and more. In this paper we studied the influence of pressure in the reactor chamber on the roughness of an InGaP "nucleation layer" grown on Ge. The growth of the layers was performed in a metalorganic vapour phase epitaxy reactor AIX 200/4. The source gases were trimethylgallium, trimethylindium and $AsH_3$. The rate of pressure in the reactor was raised from 100 mbar to 400 mbar by 50 mbar. The InGaP layers with the lowest roughness were achieved at the pressure of 400 mbar. The layers were characterized by very low roughness (RMS < 0.3) measured by atomic force microscopy. The quality of the surface was perfect enough to be applied in a solar cell structure.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-050-A-051
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fermi-Edge Singularity in Excitonic Spectra of Modulation Doped AlGaAs/GaAs Quantum Wells
    Autorzy:
    Bugajski, M.
    Regiński, K.
    Godlewski, M.
    Wesołowski, M.
    Holtz, P. O.
    Buyanov, A. V.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950741.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.+z
    85.30.De
    Opis:
    The dynamic response of an electron Fermi sea to the presence of optically generated holes gives rise to an enhanced interaction of correlated electron-hole pairs near the Fermi level, resulting in an enhanced oscillator strength for optical transitions, referred to as the Fermi-edge singularity. We studied this effect in modulation-doped quantum wells which provide confined dense Fermi sea, spatially separated from dopant atoms, easily accessible for investigations under low excitation conditions. The Fermi-edge singularity was observed in both photoluminescence and photoluminescence excitation experiments, although in the case of photoluminescence the samples had to be either co-doped with acceptors in the wells to provide necessary localization of holes or designed to allow for nearly resonant scattering between the electronic states near the Fermi energy and the next unoccupied subband of the 2D electron gas.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 751-754
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE
    Autorzy:
    Kaniewska, M.
    Regiński, K.
    Muszalski, J.
    Kryńska, D.
    Litkowiec, A.
    Kaniewski, J.
    Wesołowski, M.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1951031.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.De
    85.60.Jb
    73.20.Dx
    Opis:
    Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 847-850
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Kinetics of the Spin-Conversion of Positronium Measured by β$\text{}^{+}$γ∆E Age-Momentum Correlation
    Autorzy:
    Lauff, U.
    Maier, K.
    Major, J.
    Seeger, A.
    Stoll, H.
    Wesołowski, P.
    Koch, M.
    Bilard, I.
    Abbé, J.
    Duplâtre, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929104.pdf
    Data publikacji:
    1993-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    Opis:
    Age-momentum correlation (AMOC) measurements provide time-resolved information on the momentum distribution of annihilating electron-positron pairs through correlated determination of Doppler broadening (∆E) of the 511 keV annihilation radiation line and positron age. In the β$\text{}^{+}$γ∆E AMOC technique implemented at the Stuttgart pelletron accelerator the start signals for the age measurements are generated when the relativistic positrons pass through a fast plastic scintillator, which has a detection efficiency close to unity. Beam-based β$\text{}^{+}$γ∆E AMOC measurements thus combine high β$\text{}^{+}$γ∆E triple-coincidence rates with low background. From a practical point of view this constitutes a major progress compared to conventional (source-based) γγ∆E AMOC measurements. The AMOC technique permits direct access to a wide variety of time-dependent processes, among them the reaction kinetics in positronium chemistry. As an example, we present a β$\text{}^{+}$γ∆E AMOC investigation of the kinetics of a spin-conversion reaction of positronium in methanol induced by the presence of a nitrosyl free-radical paramagnetic solute (4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl , HTEMPO). The AMOC measurements allowed the time-resolved observation of the spin-conversion process, which had been investigated before by uncorrelated positron lifetime and Doppler-broadening measurements. It is found that within the concentration range investigated (≤ 0.1 mol/l) the spin-conversion reaction rate at room temperature depends linearly on the HTEMPO concentration with a reaction-rate constant k$\text{}_{conv}$ = (22.5 ± 0.5) × 10$\text{}^{9}$ l mol$\text{}^{-1}$ s$\text{}^{-1}$.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 3; 349-358
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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