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    Wyświetlanie 1-12 z 12
    Tytuł:
    Effect of Hydrostatic Pressure on InP:Yb Luminescence
    Autorzy:
    Stąpor, A.
    Kozanecki, A.
    Reimann, K.
    Syassen, K.
    Weber, J.
    Moser, M.
    Scholz, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1886707.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    78.55.Cr
    Opis:
    Tle effects of hydrostatic pressure on the InP:Yb luminescence were explored using a gasketed diamond anvil cell (DAC). The pressure dependence of the Yb$\text{}^{3+}$ luminescence shows a small positive shift (0.96 meV/GPa) at low pressures (< 4 GPa) and a negative one (-0.04 meV/GPa) above 4 GPa. The spectra of the Yb$\text{}^{3+}$ emission differ markedly in these two pressure ranges. It was concluded that intra-4f-shell transitions of the Yb$\text{}^{3+}$ on indium substitutional (Td) site dominate in the spectrum above 4 GPa, whereas at lower pressures the emission has a different nature.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 315-318
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Recrystallization of Amorphous Layer in Ion Implanted GaAs - Transmission Electron Microscopy Studies
    Autorzy:
    Jasiński, J.
    Liliental-Weber, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950818.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    61.72.Cc
    61.72.Ff
    Opis:
    2 MeV arsenic or gallium ions were used to produce nonstoichiometric buried amorphous layers in gallium arsenide. The mechanism of thermally induced regrowth of these layers was investigated using transmission electron microscopy. Low-temperature annealing resulted in nucleation of high densities of stacking faults. This was associated with the local nonstoichiometry of the amorphous layers. After annealing at high temperatures, in arsenic as well as in gallium implanted samples, two layers of voids, formed in result of vacancies clustering, were found in areas adjacent to the initial location of the amorphous-crystalline interfaces. A qualitative model of the formation of such layers was proposed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 825-828
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Defects in Low-Temperature GaAs
    Autorzy:
    Korona, K. P.
    Muszalski, J.
    Kamińska, M.
    Weber, E. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923822.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.80.Ey
    Opis:
    Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 821-824
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electron Paramagnetic Resonance Study of Se-Doped AlSb: Evidence for Negative-U of the DX Center
    Autorzy:
    Stallinga, P.
    Walukiewicz, W.
    Weber, E.R.
    Becla, P.
    Lagowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1943839.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    76.30.Da
    Opis:
    A metastable electron paramagnetic resonance signal is observed in Se doped AlSb. After illumination a strong, persistent electron paramagnetic resonance signal with an isotropic g-factor of 1.949 is observed. The absence of any electron paramagnetic resonance when cooled in the dark is direct evidence for the negative-U model. The electron paramagnetic resonance arises from the effective-mass state of the defect, which is not filled at thermal equilibrium. An analysis of the lineshape reveals that the linewidth is determined by hyperfine interactions. The extend of the wave function is found to be comparable to the prediction for the effective-mass state.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 1043-1047
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Electrical Measurements of Low-Temperature InAlAs
    Autorzy:
    Korona, K. P.
    Wysmołek, A.
    Bożek, R.
    Kamińska, M.
    Baranowski, J. M.
    Weber, E. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923833.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    73.60.Br
    78.55.Cr
    Opis:
    Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 825-828
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Time Dependent Changes in Ag Doped YBCO Superconductors
    Autorzy:
    Volochová, D.
    Antal, V.
    Diko, P.
    Šefčiková, M.
    Zmorayová, K.
    Kováč, J.
    Weber, H.
    Chaud, X.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535451.pdf
    Data publikacji:
    2010-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.25.Ha
    74.25.Sv
    74.62.Bf
    74.62.Dh
    74.62.Fj
    Opis:
    Magnetization measurements at 77 K were conducted on the single-crystalline samples of YBCO superconductor doped with Ag prepared by the top-seeded melt-growth process. The single-grain samples had a nominal composition $Y_{1.5}Ba_2(Cu,Ag)_3O_{y}$. Magnetization measurements on the samples, oxygenated by two different processes: by standard oxygenation and by high pressure oxygenation, repeated after 24 months, revealed time dependent changes in magnetization behaviour and critical transition temperatures, T_{c}, which could be associated with redistribution of oxygen vacancies and their interaction with Ag dopant atoms.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 5; 1047-1048
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    FFirst TSC and DLTS Measurements of Low Temperature GaAs
    Autorzy:
    Muszalski, J.
    Babiński, A.
    Korona, K. P.
    Kamińska, E.
    Piotrowska, A.
    Kamińska, M.
    Weber, E. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891236.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.80.Ey
    Opis:
    The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 413-416
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Superconductivity in Indium Diffused GaAs
    Autorzy:
    Baranowski, J. M.
    Wójcik, P.
    Palczewska, M.
    Jabłoński, R.
    Weber, E. R.
    Yau, W. P.
    Sohn, H.
    Werner, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1921582.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.70.Mq
    76.20.+q
    Opis:
    Superconductivity of indium diffused GaAs was investigated. The superconductivity in these samples was identified by the magnetic susceptibility and the characteristic field modulated microwave absorption. The static magnetic susceptibility was measured from 40 K down to 2.5 K. The result shows two distinctive diamagnetic contributions within 7 K-2.5 K range. These diamagnetic contributions were correlated with the excess of In and Ga metal in GaAs.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 670-673
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Diffraction Studies of Nanocrystals: Theory and Experiment
    Autorzy:
    Palosz, B.
    Grzanka, E.
    Gierlotka, S.
    Stel'makh, S.
    Pielaszek, R.
    Bismayer, U.
    Neuefeind, J.
    Weber, H.-P.
    Palosz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035453.pdf
    Data publikacji:
    2002-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.+w
    Opis:
    Based on theoretical calculations of powder diffraction data it is shown that the assumption of the infinite crystal lattice for small particles is not justified, leads to significant changes of the diffraction patterns, and may lead to erroneous interpretation of the experimental results. An alternate evaluation of diffraction data of nanoparticles, based on the so-called "apparent lattice parameter", alp, is proposed.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 1; 57-82
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts
    Autorzy:
    Piotrowska, A.
    Kamińska, E.
    Piotrowski, T.
    Kasjaniuk, S.
    Guziewicz, M.
    Gierlotka, S.
    Lin, X. W.
    Liliental-Weber, Z.
    Washburn, J.
    Kwiatkowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873078.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    Opis:
    Interfacial reactions between GaSb and Au were studied by Rutherford backscattering, X-ray diffraction, and cross-sectional transmission electron microscopy. Evaluation of the extent to which the GaSb substrate decomposes was of primary concern. The results give evidence that the reaction takes place even at temperatures as low as 180°C. High reactivity of gold towards GaSb revealed by this study demonstrates that Au-based metallization is not a good candidate for device quality ohmic contacts to GaSb-based devices.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 419-422
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide
    Autorzy:
    Jasiński, J.
    Kurpiewski, A.
    Korοna, K.
    Kamińska, M.
    Ρalczewska, M.
    Krotkus, A.
    Marcinkievicius, S.
    Liliental-Weber, Z.
    Tan, H. H.
    Jagadish, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933772.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Er
    73.90.+f
    Opis:
    Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As$\text{}_{Ga}$) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 747-750
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanostructural Superconducting Materials for Fault Current Limiters and Cryogenic Electrical Machines
    Autorzy:
    Prikhna, T.
    Gawalek, W.
    Savchuk, Ya.
    Sergienko, N.
    Moshchil, V.
    Sokolovsky, V.
    Vajda, J.
    Tkach, V.
    Karau, F.
    Weber, H.
    Eisterer, M.
    Joulain, A.
    Rabier, J.
    Chaud, X.
    Wendt, M.
    Dellith, J.
    Danilenko, N.
    Habisreuther, T.
    Dub, S.
    Meerovich, V.
    Litzkendorf, D.
    Nagorny, P.
    Kovalev, L.
    Schmidt, Ch.
    Melnikov, V.
    Shapovalov, A.
    Kozyrev, A.
    Sverdun, V.
    Kosa, J.
    Vlasenko, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1549637.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.25.Sv
    74.81.Bd
    74.70.Ad
    74.78.Na
    74.62.Fj
    74.25.Ld
    74.62.Dh
    74.25.Ha
    Opis:
    Materials of the Y-Ba-Cu-O (melt-textured $YBa_{2}Cu_{3}O_{7-δ}$-based materials or MT-YBCO) and Mg-B-O ($MgB_{2}$-based materials) systems with high superconducting performance, which can be attained due to the formation of regularly distributed nanostructural defects and inhomogeneities in their structure can be effectively used in cryogenic technique, in particular in fault current limiters and electrical machines (electromotors, generators, pumps for liquid gases, etc.). The developed processes of high-temperature (900-800°C) oxygenation under elevated pressure (16 MPa) of MT-YBCO and high-pressure (2 GPa) synthesis of $MgB_{2}$-based materials allowed us to attain high superconductive (critical current densities, upper critical fields, fields of irreversibility, trapped magnetic fields) and mechanical (hardness, fracture toughness, Young modulus) characteristics. It has been shown that the effect of materials properties improvement in the case of MT-YBCO was attained due to the formation of high twin density (20-22 $μm^{-1}$), prevention of macrocracking and reduction (by a factor of 4.5) of microcrack density, and in the case of $MgB_{2}$-based materials due to the formation of oxygen-enriched as compared to the matrix phase fine-dispersed Mg-B-O inhomogeneities as well as inclusions of higher borides with near-$MgB_{12}$ stoichiometry in the Mg-B-O matrix (with 15-37 nm average grain sizes). The possibility is shown to obtain the rather high $T_{c}$ (37 K) and critical current densities in materials with $MgB_{12}$ matrix (with 95% of shielding fraction as calculated from the resistant curve).
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 7-14
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-12 z 12

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