Autor: Turos, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures
Autorzy:: Krynicki, J.
Rzewuski, H.
Turos, A.
Powiązania:: https://bibliotekanauki.pl/articles/1924215.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
61.70.Tm
Opis:: Amorphization of P and As implanted GaAs at liquid nitrogen temperature has been investigated. The post-implantation damage was measured by means of Rutherford Backscattering (RBS) He$\text{}^{+}$ channeling technique. The critical dose and critical energy densities for amorphization were determined. From the results obtained it is concluded that for both ions the amorphization process can be satisfactorily described by the heterogeneous model.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 871-875
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: X-ray Standing Waves and Rutherford backscattering Studies of the Structure of Si Single Crystals Implanted with Fe Ions
Autorzy:: Vartanyantz, I. A.
Auleytner, J.
Nowicki, L.
Kwiatkowski, S.
Turos, A.
Powiązania:: https://bibliotekanauki.pl/articles/1945411.pdf
Data publikacji:: 1996-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.10.-i
Opis:: The X-ray standing wave and Rutherford backscattering spectroscopy in channelling geometry were applied for the investigation of the structure of silicon single crystals implanted with 80 keV Fe ions. Both methods were used for the determination of crystal damage and lattice location of implanted metal atoms before and after thermal annealing. Both methods gave consistent results regarding the amorphization of Si due to the Fe-ion implantation. Moreover, using both methods some Fe substitution fraction was determined. The depth profiles of implanted atoms were compared to the results of computer simulations. Complementary use of X-ray standing wave and Rutherford backscattering spectroscopy channelling techniques for studies of radiation damage and lattice location of implanted atoms is discussed.
Źródło:: Acta Physica Polonica A; 1996, 89, 5-6; 625-633
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs
Autorzy:: Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Turos, A.
Powiązania:: https://bibliotekanauki.pl/articles/1923915.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Ns
Opis:: Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 857-860
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Analysis of Crystal Lattice Deformation by Ion Channeling
Autorzy:: Jóźwik, P.
Sathish, N.
Nowicki, L.
Jagielski, J.
Turos, A.
Kovarik, L.
Arey, B.
Shutthanandan, S.
Jiang, W.
Dyczewski, J.
Barcz, A.
Powiązania:: https://bibliotekanauki.pl/articles/1400434.pdf
Data publikacji:: 2013-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.85.+p
68.55.Ln
02.70.Uu
68.37.Og
Opis:: A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded $SrTiO_3$ samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
Źródło:: Acta Physica Polonica A; 2013, 123, 5; 828-830
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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