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Wyszukujesz frazę "Orłowski, E." wg kryterium: Autor


Tytuł:
Bulk Band Structure of CdTe along the Γ-L Direction
Autorzy:
Orłowski, B. A.
Janik, E.
Janowitz, C.
Manzke, R.
Powiązania:
https://bibliotekanauki.pl/articles/1886620.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.Eq
71.20.Fi
Opis:
The valence band structure E(k) for CdTe (111) Cd side surface 2 x 2 reconstructed was investigated along the Γ-L direction of the bulk Brillouin zone by high-resolution angle-resolved photoemission spectroscopy method in the energy range between 9.5 eV and 30.0 eV. The E(k) dependence was determined as well for bulk as for some of the surface states in the whole width of the valence band. Obtained results are compared with available calculated bulk band structure along Γ-L direction.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 303-306
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Study of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se Crystals
Autorzy:
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1931782.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
Opis:
The reflectivity spectra of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se (x = 0.0, 0.024, 0.031) crystals were measured in the vacuum ultraviolet photon energy range from 4 to 12 eV to find the influence of Co ions on the valence band electronic structure of the HgSe crystal. The structure of the reflectivity spectra was interpreted in terms of the electronic band structure of the binary material (HgSe) assuming direct allowed interband transitions.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 875-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Results on Gain-Loss Asymmetry for Stock Markets Time Series
Autorzy:
Grudziecki, M.
Gnatowska, E.
Karpio, K.
Orłowski, A.
Załuska-Kotur, M.
Powiązania:
https://bibliotekanauki.pl/articles/1812227.pdf
Data publikacji:
2008-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
89.65.Gh
02.50.r
89.90.+n
Opis:
A method called investment horizon approach was successfully used to analyze stock markets of many different countries. Here we apply a version of this method to study characteristics of the Polish Pioneer mutual funds. We decided to analyze Pioneer because of its longest involvement in investing on the Polish market. Moreover, it apparently manages the biggest amount of money among all similar institutions in Poland. We compare various types of Pioneer mutual funds, characterized by different financial instruments they invest in. Previously, investment horizon approach produced different characteristics of emerging markets as opposed to mature ones, providing a possible way to quantify stock market maturity. Here we generalize the above mentioned results for mutual funds of various types.
Źródło:
Acta Physica Polonica A; 2008, 114, 3; 569-574
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
4f Shell of Gd$\text{}^{2+}$ and Gd$\text{}^{3+}$ Ions in Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te - Resonant Photoemission Study
Autorzy:
Kowalski, B. J.
Gołacki, Z.
Guziewicz, E.
Orłowski, B.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1968282.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
79.60.-i
Opis:
Resonant photoemission spectra of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te (x=0.02 and 0.08) measured for the photon energy range 142 to 151 eV show the valence band density of states distribution and the Gd 4f derived maximum. The energy position of the J=0 component of the Gd 4f maximum was determined and used as a measure of the Gd 4f shell binding energy. The electrostatic model of core level shifts was used to interpret the difference in the Gd 4f binding energies observed for x=0.02 and x=0.08.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 875-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Band Structure of Cubic HgS
Autorzy:
Guziewicz, E.
Kowalski, B.
Orłowski, B. A.
Dybko, K.
Witkowska, B.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1873013.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
Opis:
Reflectivity spectra of Hg$\text{}_{1-x}$Fe$\text{}_{x}$S (x < 0.04) and HgSe$\text{}_{1-y}$S$\text{}_{y}$ (y < 0.5) mixed crystals were measured in the vacuum ultraviolet energy range from 4 to 12 eV. Information about the electronic band structure of cubic modification of HgS resulting from the above data is analyzed and discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 395-398
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Valence Band Density of States and Mn 3d Contribution in Mn$\text{}_{1-x}$Mg$\text{}_{x}$Te
Autorzy:
Kowalski, B. J.
Guziewicz, E.
Kopalko, K.
Orłowski, B. A.
Janik, E.
Wojtowicz, T.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1991616.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Nr
79.60.-i
Opis:
Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn$\text{}_{0.44}$ Mg$\text{}_{0.56}$Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 401-405
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Visible Luminescence from Porous Silicon
Autorzy:
Bała, W.
Firszt, F.
Nossarzewska-Orłowska, E.
Brzozowski, A.
Orłowski, B. A.
Kowalski, B. J.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1929748.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
Opis:
This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 761-764
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Contribution of Mn 3d Electrons To the Valence Band of Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$te
Autorzy:
Nadolny, A. J.
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Johnson, R.
Powiązania:
https://bibliotekanauki.pl/articles/1992049.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Nr
Opis:
The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 454-458
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
Autorzy:
Guziewicz, E.
Szamota-Sadowska, K.
Kowalski, B. J.
Grodzicka, E.
Story, T.
Orłowski, B. A.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1963380.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Fx
79.60.-i
Opis:
We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 783-787
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cd_{1-x}Fe_{x}Te Ternary Crystal Formation Studied by Resonant Photoemission
Autorzy:
Guziewicz, E.
Kowalski, B. J.
Gołacki, Z.
Orłowski, B. A.
Johnson, R. L.
Masek, J.
Powiązania:
https://bibliotekanauki.pl/articles/1968113.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Fx
79.60.-i
Opis:
A resonant photoemission was used to study the ternary crystal formation, when small amount of Fe atoms was deposited (in one monolayer range of thickness) on the clean CdTe(100) surface. The constant initial state spectra taken near the Fe 3p-3d transition after Fe deposition and then again after heating process show the existence of two Fano-like resonance. The differences of the energy distribution curves taken for both resonance and antiresonance, respectively, allow us to distinguish two kind of Fe 3d contributions to the valence band: one derived from the metallic Fe islands on the surface and the second - derived from the Fe atoms built into the Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te crystal.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 793-796
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
4f Contribution to Valence Band of Pb$\text{}_{1-x}$RE$\text{}_{x}$S (RE = Eu,Gd) Studied by Resonant Photoemission
Autorzy:
Kowalski, B. J.
Gołacki, Z.
Guziewicz, E.
Orłowski, B. A.
Ghijsen, J.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1952558.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
79.60.-i
Opis:
Resonant photoemission experiments were carried out in order to reveal the contributions of partly filled Eu 4f$\text{}^{7}$ and Gd 4f$\text{}^{7}$ shells to the valence bands of Pb$\text{}_{0.95}$Eu$\text{}_{0.05}$S and Pb$\text{}_{0.95}$Gd$\text{}_{0.05}$S crystals. The coupling between these orbitals and the host electronic states is discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1035-1039
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Photoemission Study of Gd 4f States in IV-VI Crystals
Autorzy:
Kowalski, B. J.
Gołacki, Z.
Guziewicz, E.
Orłowski, B. A.
Ghijsen, J.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1963391.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
Opis:
Resonant photoemission experiments were performed in order to reveal the contributions of half-filled Gd 4f$\text{}^{7}$ shell to the electronic structures of Sn$\text{}_{0.95}$Gd$\text{}_{0.05}$Te and Pb$\text{}_{0.95}$Gd$\text{}_{0.05}$S crystals. The influences of the Gd 4f$\text{}^{6}$ final-state multiplet splitting and f-ligand hybridization on the shapes of the spectra are discussed.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 819-823
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors
Autorzy:
Pietrzyk, M.
Kowalski, B.
Orlowski, B.
Knoff, W.
Story, T.
Dobrowolski, W.
Slynko, V.
Slynko, E.
Johnson, R.
Powiązania:
https://bibliotekanauki.pl/articles/1538868.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Mq
71.20.Be
Opis:
In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 293-295
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Chemical Composition of Liquid Phase and Growth Process on Physical Properties of $Bi_2Se_3,$ $Bi_2Te_3$ and $Bi_2Te_2Se$ Compounds
Autorzy:
Hruban, A.
Materna, A.
Dalecki, W.
Strzelecka, G.
Piersa, M.
Jurkiewicz-Wegner, E.
Diduszko, R.
Romaniec, M.
Orłowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1492965.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.10.-d
72.15.-v
72.20.-I
73.20.-r
Opis:
We studied synthesis and crystal growth of $Bi_2Te_3,$ $Bi_2Se_3$ and $Bi_2Te_2Se$ compounds by means of vertical Bridgman method. Crystals were grown from stoichiometric melts and under different molar ratio of Bi:Te, Bi:Se or Bi:Te:Se. The obtained crystals were characterized by X-ray diffraction analysis, energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, and the Hall effect measurements. Some of the samples demonstrated insulating bulk behavior, by means of resistivity versus temperature measurements.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 950-953
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cd$\text{}_{1-x}$Fe$\text{}_{x}$Se/Fe Interface Formation Observed by Means of Photoemission Spectroscopy
Autorzy:
Guziewicz, E.
Orłowski, B. A.
Kowalski, B. J.
Barrett, N.
Martinotti, D.
Guillot, C.
Lacharme, J.-P.
Sebenne, C. A.
Powiązania:
https://bibliotekanauki.pl/articles/1950803.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.-r
79.60.Jv
Opis:
We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3d transition (56 eV) was used to investigate the changes after sequential deposition of Fe atoms on freshly cleaved Cd$\text{}_{0.86}$Fe$\text{}_{0.14}$Se crystal surface. In the first stages (0.6-4 ML) of Fe deposition the contribution of Fe 3d electrons to the valence band grows up markedly indicating the increase in Fe content in the Cd$\text{}_{0.86}$Fe$\text{}_{0.14}$Se crystal surface region. When the amount of Fe exceed 40 ML the resonant photoemission spectra became similar to the Fe metal with some contribution of the ternary crystal substrate.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 805-808
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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