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Tytuł:
Quantum Mechanical Studies of Bond and Molecular Polarizabilities of Gas-Phase Metal Halides
Autorzy:
Pandey, A. N.
Bigotto, A.
Gulati, R. K.
Powiązania:
https://bibliotekanauki.pl/articles/1891514.pdf
Data publikacji:
1991-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.10.+z
31.90.+s
Opis:
The bond and molecular polarizabilities are studied for the gas-phase metal halides using delta-function potential model of chemical binding on the basis of quantum mechanical approach. The applicability of the model is demonstrated. The contribution of the polarity corrections for the metal halides is thoroughly investigated and it has been found that it plays a significant role for fluorides. Our polarizability calculations resolve the discrepancy about the conformation of the barium dichloride and mercury dichloride and favour the nonlinear structure. Due to lack of experimental results for most of halides of transition metals, the decision whether to incorporate polarity corrections or not remains uncertain at this stage: we must await measurements of more experimental values before we reach any final conclusion. The ionic bond orders have been used for the first time to investigate polarizabilities of monomers and dimers of alkali halides. The results for dimers reveal that polarity contribution is essential for the lithium halides dimers and not for other dimers. The computed results will be asset for the interpretation of experimental measurements.
Źródło:
Acta Physica Polonica A; 1991, 80, 4; 503-520
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fluorescence Processes and Scintillation of CeF$\text{}_{3}$ Crystal Excited by UV and X-Ray Synchrotron Radiation
Autorzy:
Pédrini, C.
Belsky, A. N.
Moine, B.
Bouttet, D.
Powiązania:
https://bibliotekanauki.pl/articles/1929797.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
78.55.Hx
78.70.En
Opis:
Photoluminescence properties of CeF$\text{}_{3}$ have been investigated. Two kinds of emitting centers have been identified: regular Ce$\text{}^{3+}$ sites exhibiting two close emission bands (285 and 300 nm) and a fast fluorescence (20 ns) and several physically different perturbed Ce$\text{}^{3+}$ sites giving rise to a broad emission band near 340 nm and a longer fluorescence (30-40 ns) the decay time of which varies with wavelength. An energy transfer occurs between these two kinds of centers. Scintillation properties have been studied under UV and X-ray excitation. The additional fast decay always observed at short time under ionizing radiation is interpreted by a temperature dependent luminescence quenching phenomenon due to high excitation density.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 953-957
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Standing Wave Studies of Si (111) Crystal Implanted by Fe and Ni Ions
Autorzy:
Vartanjantz, I.A.
Kovalchuk, M.V.
Sosphenov, A.N.
Auleytner, J.
Majewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1891973.pdf
Data publikacji:
1991-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.70.Sk
Opis:
The X-Ray Standing Wave Method (XRSW) was applied for the investigation of the silicon samples implanted with 80 keV Fe and Ni ions. The samples were measured by the XRSW method before and after annealing process. For theoretical calculations the two layer model was used. The analysis revealed that after annealing only a slight amount (~20÷30%) of the implanted atoms occupy the position of the Si crystal planes. The Rutherford backscattering (RBS) experiment that confirms the results obtained by the XRSW method was performed.
Źródło:
Acta Physica Polonica A; 1991, 80, 6; 811-817
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Absorption in Periodic InN:In Structures
Autorzy:
Plotnikov, D. S.
Shubina, T. V.
Jmerik, V. N.
Semenov, A. N.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2047375.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
71.45.Gm
Opis:
Optical absorption measurements were exploited to study periodic InN:In structures grown by plasma-assisted molecular beam epitaxy with the thickness of the metallic inclusions varied from 2 to 48 monolayers. We demonstrate that the observed higher-energy shift of an effective absorption edge may be due to In depletion of the InN matrix via the coalescence of In into large clusters, accompanied by the respective higher-energy shift of the Mie resonance. The relevant uncertainty in the optical gap of InN is discussed.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 191-196
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fast Bolometric Response of Bulk La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ Electroceramic Structures
Autorzy:
Nikolaenko, Yu. M.
Maksimov, I. S.
Medvedev, Yu. V.
Ulyanov, A. N.
Grishin, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/2014001.pdf
Data publikacji:
2000-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
85.60.Gz
72.15.Gd
Opis:
We report on the performance of a microwave electroceramic bolometer of hybrid La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$/Al$\text{}_{2}$O$\text{}_{3}$ (0.2×2×4 mm$\text{}^{3}$) structure. The estimated thermal resistance of the bulk ceramic manganite film-single crystal sapphire interface is about 500 K/W at room temperature. This resistance is the main thermal barrier in the heat sink system and has been found to be slightly dependent on temperature. When compared with the high-T$\text{}_{c}$ superconducting bolometers, the La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ microwave electroceramic bolometer works in a more wide temperature range, from 77 K to 330 K, excluding the narrow temperature interval at the metal-insulator phase transition (T=230 K). The microwave electroceramic bolometer sensitivity and the time constant at room temperature have been found to be 0.1 V/W and 100 ms, respectively. To improve the bolometer performance the point contact has been fabricated by a break junction technique. The optimization of a microwave electroceramic bolometer design brought to a considerable improvement of basic bolometer characteristics. The microwave sensitivity was about 0.3 V/W and the time constant was less than 100 ns.
Źródło:
Acta Physica Polonica A; 2000, 97, 6; 991-995
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction
Autorzy:
Popov, A. A.
Imenkov, A. N.
Kolchanova, N. M.
Yakovlev, Yu. P.
Piotrowski, T. T.
Powiązania:
https://bibliotekanauki.pl/articles/1877143.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Nz
Opis:
The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the electroluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 559-562
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Possibility of Gamma-Induced Sensibilization Process in Rare-Earth Doped Yag Crystals
Autorzy:
Kaczmarek, S.
Matkovskii, A. O.
Mierczyk, Z.
Kopczyński, K.
Sugak, D. Yu.
Durygin, A. N.
Frukacz, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1945610.pdf
Data publikacji:
1996-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ji
61.80.Ed
78.20.Dj
Opis:
The influence of gamma irradiation on optical and lasing properties of Nd:YAG, Er:YAG and CTH:YAG single crystals was studied. The increase in optical output was established for rods without thermal annealing. The possible mechanisms of radiation sensibilization are discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 2; 285-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Lateral Photoconductivity of InGaAs Quantum Dots: the Temperature Dependence
Autorzy:
Moldavskaya, L. D.
Shashkin,, V. I.
Drozdov,, M. N.
Daniltsev, V. M.
Antonov, A. V.
Yablonsky, A. N.
Powiązania:
https://bibliotekanauki.pl/articles/2036025.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.55.Cr
78.66.Fd
Opis:
We report the temperature dependence of lateral infrared photoconductivity in multilayer InGaAs/GaAs heterostructures with selectively doped quantum dots fabricated by metalorganic chemical vapor deposition. Two spectral lines of normal-inci dence intersubband photoconductivity (90 meV and 230 meV) and a line originating from interband transitions (930 meV) were observed. The photoconductivity line 230 meV is revealed up to the temperature 140 K. The long-wavelength photoconductivity line 90 meV is quenched rapidly at the temperature 30÷40 K owing to redistribution of photoexcited carriers between small and large dots. The obtained results confirm the hypothesis about bimodal distribution of quantum dot sizes.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 579-584
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Utilization of Ir Laser Pumped Anti-Stokes Emission of Er-Yb Doped Systems for Identification of Securities
Autorzy:
Kuzmin, A. N.
Ryabtsev, G. I.
Ketko, G. A.
Gorelenko, A. Ya.
Demidovich, A. A.
Stręk, W.
Maruszewicz, K.
Dereń, P.
Powiązania:
https://bibliotekanauki.pl/articles/1945658.pdf
Data publikacji:
1996-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
Opis:
In this paper we present a utilization of anti-Stokes luminescence of Er-Yb systems for identifications of securities. A simple method of detection of an up-conversion phenomenon in such system by means of IR laser operating in the region 960-1010 nm is proposed.
Źródło:
Acta Physica Polonica A; 1996, 90, 2; 423-426
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pulsed Laser Deposition of Amorphous Co-Fe-Ni-Si-B Thin Films
Autorzy:
Gareev, R. R.
Alimpiev, S. S.
Bugoslavskii, Yu. V.
Nikiforov, S. M.
Maslov, A. I.
Shubnii, G. Yu.
Zherichin, A. N.
Powiązania:
https://bibliotekanauki.pl/articles/1955481.pdf
Data publikacji:
1997-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Kj
75.70.Ak
Opis:
Soft magnetic multicomponent Co-Fe-Ni-Si-B thin films have been grown by pulsed laser deposition onto single-crystal sapphire and silicon substrates. The static hysteresis measurements for different substrate temperatures are presented. Thin films with a coercive force smaller than 1 Oe were grown at substrate temperatures from 250°C to 350°C. X-ray diffraction measurements proved that the structure of films is amorphous. The surface morphology of grown thin films was observed by scanning electron microscopy. The chemical composition of deposited films corresponds to the composition of bulk alloy.
Źródło:
Acta Physica Polonica A; 1997, 91, 2; 321-324
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light-Induced Modification of 3D Photonic Band Structure Detected by Means of PhotoreflectionD
Autorzy:
Kapitonov, A. M.
Kachan, S. M.
Ponyavina, A. N.
Gaponenko, S. V.
Bogomolov, V. N.
Prokofiev, A. V.
Sitarek, P.
Misiewicz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1995551.pdf
Data publikacji:
1999-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.70.Qs
42.70.Gi
Opis:
Porous synthetic opal possessing a three-dimensional photonic band structure of semimetallic type was impregnated with polycrystalline CdS. The photonic stop band in (111) direction was examined by means of photoreflection technique. Under cw laser excitation of semiconductor inclusions the reflectance of the system changes indicating a modification of photonic band structure. A possible mechanism is discussed. Numerical simulations within the framework of quasicrystalline approximation are given.
Źródło:
Acta Physica Polonica A; 1999, 95, 3; 335-342
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy
Autorzy:
Semenov, A. N.
Solov'ev, V. A.
Meltser, B. Ya.
Lyublinskaya, O. G.
Terent'ev, Ya. V.
Sitnikova, A. A.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2044535.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
81.07.Ta
81.15.Hi
81.16.Dn
Opis:
We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 859-865
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Boriding of binary Ni-Ti and ternary Ni-Ti-Cu shape memory alloys
Autorzy:
Ucar, N.
Turku, N.
Ozdemir, A.
Calik, A.
Powiązania:
https://bibliotekanauki.pl/articles/1065676.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.Dk
61.72.-y
62.20.Qp
Opis:
In this work, the boriding of binary (Ni-Ti) and ternary (Ni-Ti-Cu) shape memory alloys was carried out in a solid medium at 1173 K for 8 h using the powder pack method with Ekabor-Ni powders. Characterization of boride layer formed on the surface of alloys was identified by optical microscopy and scanning electron microscopy. TiB₂, NiB₂ and SiC phases in the boride layer of borided binary (Ni-Ti) and ternary (Ni-Ti-Cu) shape memory alloys was confirmed by X-ray diffraction analysis. The microhardness and thickness of the boride layers were measured. The obtained hardness values show a hardness anomaly due to porosity and structural defects with increase of Cu content, while a decrease in the value of hardness moving from the boride layer to main structure was observed.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 492-495
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface
Autorzy:
Frantskevich, N.
Fedotov, A.
Frantskevich, A.
Mazanik, N.
Powiązania:
https://bibliotekanauki.pl/articles/1366278.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Am
61.72.uf
Opis:
The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 $cm^{-1}$ corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of this line when the irradiation time is increasing, with subsequent appearance of lines at ≈ 3621 and ≈ 3698 $cm^{-1}$ and simultaneous disappearance of 4158 $cm^{-1}$ line. No such effect was observed when the laser beam was focused on defect-free regions. The experiments have shown that heat treatment of the samples studied causes the appearance in the Raman spectra of lines at ≈ 3468, ≈ 3621, and ≈ 3812 $cm^{-1}$, which can be associated with molecular hydrogen.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1332-1334
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Structural Parameters by EXAFS Analysis of Some Co Complexes
Autorzy:
Mishra, A.
Parsai, N.
Dagaonkar, N.
Powiązania:
https://bibliotekanauki.pl/articles/1538706.pdf
Data publikacji:
2010-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cj
Opis:
In this paper we deal with a relatively simpler method for the Fourier analysis of EXAFS data and illustrate this by a detailed analysis of the data for cobalt metal foil and cobalt complexes of isoxezol series. The Fourier analysis is useful in extracting distances and information about the phase shifts, the amplitudes, the Debye-Waller factors and the mean free paths. Here we have determined interatomic distances, mean square deviation and inelastic mean free path from the Fourier transform of EXAFS data for cobalt metal foil and cobalt complexes of isoxezol series by Math-CAD programming.
Źródło:
Acta Physica Polonica A; 2010, 117, 3; 490-492
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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