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    Wyświetlanie 1-9 z 9
    Tytuł:
    Semiconductor Superlattices with Small Band Offsets - feature article
    Autorzy:
    Yang, G.
    Lewandowski, L. A.
    Furdyna, J. K.
    Ram-Mohan, L. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968871.pdf
    Data publikacji:
    1998-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    Opis:
    Optical transitions in small band offset superlattices are studied within the framework of the nearly free electron approximation, in which the weak superlattice potential is treated as a perturbation. Interband selection rules are derived for transitions involving conduction and valence band states at the superlattice Brillouin zone center and the zone edge. It is found that a number of new transitions can occur in such small-offset superlattices due to wave function mixing of different subband states. The effect of the effective mass on the optical transitions is also discussed. The theory is used to explain the results observed in magneto-optical absorption experiment in ZnSe/Zn$\text{}_{1-x}$Mn$\text{}_{x}$Se small-offset superlattices. Furthermore, the nearly free electron formulation is found to be in excellent agreement with rigorous multi-band numerical calculation on superlattices involving small band offsets.
    Źródło:
    Acta Physica Polonica A; 1998, 93, 4; 567-600
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Studies of Aluminum Nitride Nanowires
    Autorzy:
    Yang, J.
    Na, H.
    Kim, H.
    Kebede, M.
    Choi, R.
    Jeong, J.
    Lee, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505466.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    78.55.-m
    Opis:
    We report the production of AlN nanowires by the thermal heating method, for exploring their photoluminescence properties. The room-temperature photoluminescence properties were investigated with different annealing environment. While broad emissions with peaks at around 2.45 and 2.95 eV were obtained from both unannealed and annealed samples, the additional 2.1 eV peak was found from the annealed samples. We have suggested the possible emission mechanisms based on the assumption that both 2.45 eV peak and 2.1 eV peak are ascribed to the nitrogen vacancies. Annealing in N_2 environment exhibited lower intensities of 2.45 eV peak and 2.1 eV peak in comparison to those in Ar environment, presumably due to the suppression of nitrogen vacancies.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 125-127
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells
    Autorzy:
    Mickevičius, J.
    Tamulaitis, G.
    Kuokštis, E.
    Shur, M.
    Yang, J.
    Gaska, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811960.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.De
    Opis:
    Dynamics of nonequilibrium carriers in high-Al-content AlGaN/AlGaN multiple quantum wells was studied. A set of multiple quantum wells with well widths varying from 1.65 to 5.0 nm was grown by metal-organic chemical vapor deposition. The structures were investigated by photoluminescence spectroscopy under quasi-steady-state conditions. The observed blueshift of the photoluminescence band peak was attributed to the screening of the built-in electric field. The integrated photoluminescence intensity dependence on excitation and temperature showed a strong influence of carrier localization.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1247-1252
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pulsed Power and Power Conditioning Capacitors
    Autorzy:
    Macdougall, F.
    Jow, T.
    Ennis, J.
    Yang, X.
    Yen, S.
    Cooper, R.
    Gilbert, J.
    Schneider, M.
    Naruo, C.
    Bates, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807873.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.32.Tt
    84.60.Ve
    Opis:
    A capacitor development effort focused on capacitors used in pulsed power and power conversion applications underwent at General Atomics Electronic Systems Inc. (GA-ESI) for decades. In recent years, funding for these efforts has accelerated the rate of development progress to the point where the time it takes to decrease the size of a capacitor by half has dropped from 10 years to 4 years. This progress made in pulsed power and power conversion capacitors will be described along with the performance characteristics of today's capacitors.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 989-991
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements
    Autorzy:
    Mickevičius, J.
    Vitta, P.
    Tamulaitis, G.
    Žukauskas, A.
    Shur, M.
    Zhang, J.
    Yang, J.
    Gaska, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813195.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    78.55.Cr
    Opis:
    Carrier dynamics in high-quality GaN epilayer was investigated at two extreme excitation levels. Carrier lifetime under high excitation conditions was estimated by using light-induced transient grating technique. Measurements at extremely low excitation power density were performed by using frequency-domain fluorescence lifetime technique. The study was performed in a wide temperature range from 8 to 300 K. The results revealed the influence of donor-acceptor pair recombination and carrier trapping processes.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 833-837
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Compact High Current Vacuum Diode Based on a Ceramic-Metal Welding Interface
    Autorzy:
    Xun, T.
    Zhang, J.
    Yang, H.
    Wang, Y.
    Liu, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807886.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.59.Mv
    73.20.-r
    84.70.+p
    Opis:
    For one kind of high current diodes composed of a ceramic-metal welding vacuum interface, the electrical design was presented. For compactness, a radial type insulator and a cone-column anode crust were adopted. The shielding methods around cathode and anode region were applied to mitigate the influence of welding solder to vacuum flashover. Finite Element Analysis (FEA) simulation results indicated that by adjusting the anode outline and shielding shape, the electric fields along the ceramic were well distributed. High voltage test was conducted on a long-pulse accelerator and experimental results confirm the theoretic design: the diode can stably hold on 400 kV and 200 ns voltage pulse.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1013-1015
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analytic Equation of State and Thermodynamic Properties, for α-, β-, and γ-Si₃N₄ Based on Analytic Mean Field Approach
    Autorzy:
    Wang, L.
    Sun, J.
    Yang, W.
    Tian, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812044.pdf
    Data publikacji:
    2008-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    64.10.+h
    65.40.-b
    61.66.Fn
    Opis:
    The analytic mean field potential approach is applied to α-, β-, and γ-Si₃N₄. The analytic expressions for the Helmholtz free energy, internal energy, and equation of state were derived. The formalism for the case of the Morse potential is used in this work. Its six potential parameters are determined through fitting the compression experimental data of α-, β-, and γ-Si₃N₄. The calculated compression curves of α-, β-, and γ-Si₃N₄ are in good agreement with the available experimental data. This suggests that the analytic mean field potential approach is a very useful approach to study the thermodynamic properties of Si₃N₄. Furthermore, we predict the variation of the free energy and internal energy with the molar volume at several higher temperatures and calculate the temperature dependence of the molar volume, bulk modulus, thermal expansion coefficient and isochoric heat capacity at zero pressure.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 4; 807-818
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterized Microstructure and Electrical Properties of Hydrogenated Nanocrystalline Silicon Films by Raman and Electrical Conductivity Spectra
    Autorzy:
    Xiao-Yong, Gao
    Jian-Tao, Zhao
    Yu-Fen, Liu
    Qing-Geng, Lin
    Yong-Sheng, Chen
    Jin-Hua, Gu
    Shi-E, Yang
    Jing-Xiao, Lu
    Powiązania:
    https://bibliotekanauki.pl/articles/1808127.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.23.Cq
    73.61.-r
    Opis:
    Microstructure and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) film deposited on glass substrate at low temperature were characterized by average grain size, crystallinity, and dark electrical conductivity data obtained from the Raman and electrical conductivity spectroscopy, respectively. The average grain size, crystallinity and electrical conductivity have a similar change with substrate temperature. A threshold substrate temperature determined by silane concentration appears in their corresponding spectroscopy vs. substrate temperature. The dependence of crystallinity, average grain size and electrical conductivity on substrate temperature were accounted for by surface diffusion model and heterojunction quantum dot model, respectively.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 738-741
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoexcitation Spectroscopy and Material Alteration with Free-Electron Laser
    Autorzy:
    Sturmann, J.
    Albridge, R. G.
    Barnes, A. V.
    Gilligan, J.
    Graham, M. T.
    Mckinley, J. T.
    Ueda, A.
    Wang, W.
    Yang, X.
    Tolk, N. H.
    Davidson, J. L.
    Margaritondo, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963341.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.La
    79.20.Ds
    63.20.-e
    79.60.Jv
    73.20.At
    Opis:
    As synchrotron radiation sources have been used for many experiments in the ultraviolet and X-ray regimes, the free-electron laser is an excellent source for a wide array of infrared-photon projects and applications. The free-electron laser delivers a beam of powerful tunable pulsed radiation which provides the opportunity for spatial and temporal localization of the energy delivered at any desired wavelength within the 2-10 μ regime. One application discussed employs the free-electron laser for spectroscopy as a probe of electronic and vibrational structures. Another application uses the free-electron laser beam as a tool for altering materials in a fundamentally new way.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 689-696
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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